scholarly journals The room temperature phosphine-free synthesis of near-infrared emitting HgSe quantum dots

2014 ◽  
Vol 2 (12) ◽  
pp. 2107-2111 ◽  
Author(s):  
H. Mirzai ◽  
M. N. Nordin ◽  
R. J. Curry ◽  
J.-S. Bouillard ◽  
A. V. Zayats ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Near Infrared ◽  
High Quality

In this report, we describe a synthesis of high quality infrared emitting HgSe quantum dots using a variety of room temperature routes, resulting in particles of various morphologies.

Highly luminescent InP-In(Zn)P/ZnSe/ZnS core/shell/shell colloidal quantum dots with tunable emission synthesized based on growth-doping

2021 ◽  
Author(s):  
Cong Shen ◽  
Yan Qing Zhu ◽  
Zixiao Li ◽  
Jingling Li ◽  
Hong Tao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Infrared Region ◽  
Colloidal Quantum Dots ◽  
High Quality ◽  
Promising Alternative ◽  
Lower Toxicity ◽  
Near Infrared Region ◽  
Inp Quantum Dots ◽  
Tunable Emission

InP quantum dots (QDs) are considered as the most promising alternative to Cd-based QDs with the lower toxicity and emission spectrum tunability ranging from visible to near-infrared region. Although high-quality...

scholarly journals Fluorine-Doped Tin Oxide Colloidal Nanocrystals

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 863 ◽  
Author(s):  
Owen Kendall ◽  
Pierce Wainer ◽  
Steven Barrow ◽  
Joel van Embden ◽  
Enrico Della Gaspera
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Surface Plasmon Resonance ◽  
Surface Plasmon ◽  
Tin Oxide ◽  
Near Infrared ◽  
Transparent Electrode ◽  
High Quality ◽  
Detailed Characterization

Fluorine-doped tin oxide (FTO) is one of the most studied and established materials for transparent electrode applications. However, the syntheses for FTO nanocrystals are currently very limited, especially for stable and well-dispersed colloids. Here, we present the synthesis and detailed characterization of FTO nanocrystals using a colloidal heat-up reaction. High-quality SnO2 quantum dots are synthesized with a tuneable fluorine amount up to ~10% atomic, and their structural, morphological and optical properties are fully characterized. These colloids show composition-dependent optical properties, including the rise of a dopant-induced surface plasmon resonance in the near infrared.

Vapour Sensitivity of InP Surface Quantum Dots

2014 ◽  
Vol 605 ◽  
pp. 177-180 ◽  
Author(s):  
Roberta de Angelis ◽  
Mauro Casalboni ◽  
Liliana D’Amico ◽  
Fabio de Matteis ◽  
Fariba Hatami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Near Infrared ◽  
Surface Recombination ◽  
Surface States ◽  
Infrared Emission ◽  
Polar Solvents ◽  
Solvent Type ◽  
Near Infrared Emission ◽  
Inp Surface

We studied the effect of solvent vapours on the photoluminescent emission of self-assembled InP surface quantum dots (SQDs). Their room temperature near infrared emission undergoes a fully reversible intensity enhancement when the dots were exposed to vapours of polar solvents since polar molecules are likely to be adsorbed onto intrinsic surface states and thus reducing non radiative surface recombination. The shape and position of the emission band does not change. The observed effect is dependent on solvent type and concentration with linear law over a limited concentration range.

Microwave-assisted aqueous synthesis of Mn-doped ZnS quantum dots and their room-temperature phosphorescence detection of indapamide

2014 ◽  
Vol 6 (18) ◽  
pp. 7489-7495 ◽  
Author(s):  
Dong Zhu ◽  
Wei Li ◽  
Hong-Mei Wen ◽  
Qian Chen ◽  
Li Ma ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Quantum Dots ◽  
Room Temperature ◽  
Synthetic Approach ◽  
Room Temperature Phosphorescence ◽  
High Quality ◽  
Aqueous Synthesis ◽  
Microwave Assisted ◽  
Mn Doped

High-quality Mn-doped ZnS QDs were prepared using a green and rapid microwave-assisted synthetic approach in an aqueous solution, which were used for room-temperature phosphorescence (RTP) detection of indapamide.

Facile Synthesis of High-Quality, Water-Soluble, Near-Infrared-Emitting PbS Quantum Dots

2009 ◽  
Vol 2009 (23) ◽  
pp. 3440-3446 ◽  
Author(s):  
Dawei Deng ◽  
Wenhao Zhang ◽  
Xinyang Chen ◽  
Fei Liu ◽  
Jian Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Water Soluble ◽  
Facile Synthesis ◽  
High Quality ◽  
Quality Water ◽  
Pbs Quantum Dots

Low-threshold near-infrared lasing at room temperature using low-toxicity Ag2Se quantum dots

Nanoscale ◽  
2020 ◽  
Vol 12 (42) ◽  
pp. 21879-21884
Author(s):  
Chen Liao ◽  
Luping Tang ◽  
Liye Wang ◽  
Yan Li ◽  
Jie Xu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Near Infrared ◽  
Low Toxicity ◽  
Low Threshold

Benefiting from the low (2-fold) degeneracy of the lowest quantized states of orthorhombic Ag2Se quantum dots, room-temperature near-infrared lasing with a low threshold (163 μJ cm−2) is achieved.

Room-temperature doping of ytterbium into efficient near-infrared emission CsPbBr1.5Cl1.5 perovskite quantum dots

2020 ◽  
Vol 56 (43) ◽  
pp. 5811-5814 ◽  
Author(s):  
Shuangyi Zhao ◽  
Yubo Zhang ◽  
Zhigang Zang
Keyword(s):  
Quantum Dots ◽  
Quantum Yield ◽  
Room Temperature ◽  
Near Infrared ◽  
Infrared Emission ◽  
Perovskite Quantum Dots ◽  
Near Infrared Emission

Doping of Yb can facilitate the enhancement of NIR quantum yield in CsPbBr1.5Cl1.5 perovskite quantum dots.

Ultra-fast synthesis of water soluble MoO3−x quantum dots with controlled oxygen vacancies and their near infrared fluorescence sensing to detect H2O2

2020 ◽  
Vol 5 (11) ◽  
pp. 1538-1543
Author(s):  
Shichuan Zhong ◽  
Changchang Xing ◽  
An Cao ◽  
Tao Zhang ◽  
Xuejiao Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Detection Limit ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Near Infrared ◽  
Fluorescence Probe ◽  
Water Soluble ◽  
Fluorescence Sensing ◽  
Nir Fluorescence ◽  
Fast Synthesis

We report a facile method for the synthesis of water soluble MoO3−x QDs with controlled oxygen vacancies at room temperature within 5 seconds, the QDs could be used as a NIR fluorescence probe to detect H2O2 with a low detection limit (3 nM).

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