scholarly journals Site-specific immobilization of DNA on silicon surfaces by using the thiol–yne reaction

2014 ◽  
Vol 2 (48) ◽  
pp. 8510-8517 ◽  
Author(s):  
Jorge Escorihuela ◽  
María-José Bañuls ◽  
Rosa Puchades ◽  
Ángel Maquieira
Keyword(s):  
Covalent Immobilization ◽  
Silicon Surfaces ◽  
Site Specific ◽  
Silicon Based

Covalent immobilization of ssDNA fragments onto silicon-based materials was performed using the thiol–yne reaction.

Site-specific, covalent immobilization of an engineered enterokinase onto magnetic nanoparticles through transglutaminase-catalyzed bioconjugation

2019 ◽  
Vol 177 ◽  
pp. 506-511 ◽  
Author(s):  
Jing-Hong Wang ◽  
Ming-Ze Tang ◽  
Xiao-Tian Yu ◽  
Chong-Mei Xu ◽  
Hong-Ming Yang ◽  
...  
Keyword(s):  
Magnetic Nanoparticles ◽  
Covalent Immobilization ◽  
Site Specific

A Simple Method for Covalent Immobilization of Proteins on Porous Silicon Surfaces

2005 ◽  
Vol 34 (2) ◽  
pp. 226-227 ◽  
Author(s):  
Bing Xia ◽  
Jun Li ◽  
Shou-Jun Xiao ◽  
Dong-Jie Guo ◽  
Jing Wang ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Covalent Immobilization ◽  
Silicon Surfaces ◽  
Simple Method

Covalent Immobilization of a TiW5 Polyoxometalate on Derivatized Silicon Surfaces

2005 ◽  
Vol 44 (8) ◽  
pp. 1254-1257 ◽  
Author(s):  
R. John Errington ◽  
Sagar S. Petkar ◽  
Benjamin R. Horrocks ◽  
Andrew Houlton ◽  
Lars H. Lie ◽  
...  
Keyword(s):  
Covalent Immobilization ◽  
Silicon Surfaces

scholarly journals Addition to “Site-Specific and Covalent Immobilization of His-Tagged Proteins via Surface Vinyl Sulfone-Imidazole Coupling”

Langmuir ◽  
2020 ◽  
Vol 36 (10) ◽  
pp. 2740-2740
Author(s):  
Mingyang Li ◽  
Fang Cheng ◽  
Haoqiang Li ◽  
Weiwei Jin ◽  
Chen Chen ◽  
...  
Keyword(s):  
Covalent Immobilization ◽  
Vinyl Sulfone ◽  
Site Specific

Site-Specific and Covalent Immobilization of His-Tagged Proteins via Surface Vinyl Sulfone–Imidazole Coupling

Langmuir ◽  
2019 ◽  
Vol 35 (50) ◽  
pp. 16466-16475 ◽  
Author(s):  
Mingyang Li ◽  
Fang Cheng ◽  
Haoqiang Li ◽  
Weiwei Jin ◽  
Chen Chen ◽  
...  
Keyword(s):  
Covalent Immobilization ◽  
Vinyl Sulfone ◽  
Site Specific

The Effect of Vacancies Grown into Silicon on Gold Diffusion

1992 ◽  
Vol 262 ◽  
Author(s):  
R. K. Graupner ◽  
J. A. Van Vechten ◽  
P. Harwood ◽  
T. K. Monson
Keyword(s):  
Point Defects ◽  
Silicon Crystal ◽  
Silicon Surfaces ◽  
Vacuum System ◽  
Float Zone ◽  
Diffusion Temperature ◽  
High Concentrations ◽  
Gold Diffusion ◽  
Silicon Based ◽  
High Degree

ABSTRACTWe propose a generalized model for gold diffusion in silicon based on the effect of the high concentrations of vacancies and vacancy complexes in the as-grown silicon. The monovacancy profiles calculated using this model are identical to the substitutional gold profiles calculated using the kick-out model. We deposited Au on commercial float zone Si in a vacuum system after the Si had reached the diffusion temperature (1233 K) and had been annealed in various ways. Contrary to previously published reports, we find the electrically active Au with a nearly one-sided profile when the Au is deposited on samples which were preannealed in vacuum. We conclude that annealed silicon surfaces lack the imperfections needed to make them effective sources or sinks for vacancies or self-interstitials. We propose that this can cause a high degree of supersaturation in the as-grown silicon crystal since the point defects cannot annihilate at the surfaces to maintain equilibrium as the crystal is cooled.

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