Layered transition metal dichalcogenides for electrochemical energy generation and storage

2014 ◽  
Vol 2 (24) ◽  
pp. 8981-8987 ◽  
Author(s):  
Martin Pumera ◽  
Zdeněk Sofer ◽  
Adriano Ambrosi

Layered transition metal dichalcogenides (TMDs) (MoS2, MoSe2, WS2, WSe2, etc.) are a chemically diverse class of compounds having remarkable electrochemical properties.

Catalysts ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 151
Author(s):  
Chueh-An Chen ◽  
Chiao-Lin Lee ◽  
Po-Kang Yang ◽  
Dung-Sheng Tsai ◽  
Chuan-Pei Lee

Two-dimensional-layered transition metal dichalcogenides (2D-layered TMDs) are a chemically diverse class of compounds having variable band gaps and remarkable electrochemical properties, which make them potential materials for applications in the field of electrochemical energy. To date, 2D-layered TMDs have been wildly used in water-splitting systems, dye-sensitized solar cells, supercapacitors, and some catalysis systems, etc., and the pertinent devices exhibit good performances. However, several reports have also indicated that the active sites for catalytic reaction are mainly located on the edge sites of 2D-layered TMDs, and their basal plane shows poor activity toward catalysis reaction. Accordingly, many studies have reported various approaches, namely active-site engineering, to address this issue, including plasma treatment, edge site formation, heteroatom-doping, nano-sized TMD pieces, highly curved structures, and surface modification via nano-sized catalyst decoration, etc. In this article, we provide a short review for the active-site engineering on 2D-layered TMDs and their applications in electrochemical energy. Finally, the future perspectives for 2D-layered TMD catalysts will also be briefly discussed.


2020 ◽  
Vol 44 (37) ◽  
pp. 16144-16151 ◽  
Author(s):  
Yan Guo ◽  
Nishtha Manish Singh ◽  
Chandreyee Manas Das ◽  
Qingling Ouyang ◽  
Lixing Kang ◽  
...  

Layered transition metal dichalcogenides (TMDCs) within two dimension (2D) have been gaining widespread consideration due to their exclusive optoelectronic properties.


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