High-temperature failure behaviour and mechanism of K-based additives in Li–Mg–N–H hydrogen storage systems

2014 ◽  
Vol 2 (20) ◽  
pp. 7345-7353 ◽  
Author(s):  
Chao Li ◽  
Yongfeng Liu ◽  
Yanjing Yang ◽  
Mingxia Gao ◽  
Hongge Pan

The high-temperature failure mechanism of K-based additives in a Mg(NH2)2–2LiH system was clarified for the first time.

Adsorption ◽  
2005 ◽  
Vol 11 (S1) ◽  
pp. 871-876 ◽  
Author(s):  
Sarang A. Gadre ◽  
Armin D. Ebner ◽  
James A. Ritter

2022 ◽  
Vol 46 ◽  
pp. 103761
Author(s):  
Jianjun Ye ◽  
Zhenhua Zhao ◽  
Junxu Cui ◽  
Zhengli Hua ◽  
Wenzhu Peng ◽  
...  

1989 ◽  
Vol 159 ◽  
Author(s):  
E.D. Richmond

ABSTRACTFor the first time the (1102) surface of sapphire has been investigated by X-ray photoelectron spectroscopy to ascertain chemical changes resulting from annealing in vacuum at 1300° C and 1450° C. As received substrates had a substantial surface C contaminant. For substrates that were chemically cleaned before inserting them into the MBE system no trace of carbon is detected. A residual flourine contaminant results from the cleaning procedure and is desorbed by the vacuum annealing. Spectra of annealed substrates are compared to the unannealed chemically cleaned substrates. The annealed substrates exhibit 0.4 to 0.5 eV shift to higher binding energy of the Al peak and a 0.3 eV shift to higher binding energy of the O peak. In addition, a 2% depletion of oxygen from the surface occurs.


2015 ◽  
Vol 3 (20) ◽  
pp. 10942-10948 ◽  
Author(s):  
Wei Weng ◽  
Qingqing Wu ◽  
Qian Sun ◽  
Xin Fang ◽  
Guozhen Guan ◽  
...  

Failure mechanism is investigated for the first time in a Si-based fiber-shaped electrode. The interphase electrical contact resistance indicates the dominant failure mechanism, which is the loss of contact between the current collector/conductive network and the active material. The decreasing contact resistance denotes the loose interphase contact and a decreasing capacity.


2015 ◽  
Vol 245 ◽  
pp. 86-92 ◽  
Author(s):  
O.V. Netskina ◽  
A.M. Ozerova ◽  
O.V. Komova ◽  
G.V. Odegova ◽  
V.I. Simagina

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