Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation

RSC Advances ◽  
2015 ◽  
Vol 5 (22) ◽  
pp. 17325-17335 ◽  
Author(s):  
Vattikondala Ganesh ◽  
Mahdi Alizadeh ◽  
Ahamad Shuhaimi ◽  
Alagarsamy Pandikumar ◽  
Boon Tong Goh ◽  
...  

Indium nitride thin films were grown at different RF powers using a plasma-assisted reactive evaporation method and their electrochemical properties were investigated.

Author(s):  
Milosz Grodzicki ◽  
Radoslaw Wasielewski ◽  
Piotr Mazur ◽  
Stefan Zuber ◽  
Antoni Ciszewski

1988 ◽  
Vol 24 (3) ◽  
pp. 2055-2059 ◽  
Author(s):  
T. Haeiwa ◽  
M. Matsumoto

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2207-L2210 ◽  
Author(s):  
Ho Jung Chang ◽  
Yasuhiro Watanabe ◽  
Yutaka Doshida ◽  
Kenji Shimizu ◽  
Yoichi Okamoto ◽  
...  

2001 ◽  
Vol 40 (Part 1, No. 7) ◽  
pp. 4516-4517 ◽  
Author(s):  
Yuichi Sato ◽  
Toshifumi Hishinuma ◽  
Susumu Sato

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