Yttria stabilized zirconia derived from metal–organic frameworks

RSC Advances ◽  
2015 ◽  
Vol 5 (14) ◽  
pp. 10619-10622 ◽  
Author(s):  
Zifeng Yue ◽  
Shucheng Liu ◽  
Yi Liu
Keyword(s):  
Thermal Treatment ◽  
Metal Organic Frameworks ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Metal Organic

Mesoporous yttria stabilized zirconia (YSZ) with single cubic structures is obtained via a two-step thermal treatment based on a Y-doped UiO-66 template.

Grain-Size-Dependent Thermal Transport Properties in Nanocrystalline Yttria-Stabilized Zirconia

2001 ◽  
Vol 703 ◽  
Author(s):  
Ho-Soon Yang ◽  
J.A. Eastman ◽  
L.J. Thompson ◽  
G.-R. Bai
Keyword(s):  
Grain Boundaries ◽  
Thermal Transport ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Stabilized Zirconia ◽  
Size Dependent ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTUnderstanding the role of grain boundaries in controlling heat flow is critical to the success of many envisioned applications of nanocrystalline materials. This study focuses on the effect of grain boundaries on thermal transport behavior in nanocrystalline yttria-stabilized zirconia (YSZ) coatings prepared by metal-organic chemical vapor deposition.

A stepwise transition from microporosity to mesoporosity in metal–organic frameworks by thermal treatment

2011 ◽  
Vol 2 (1) ◽  
pp. 103-106 ◽  
Author(s):  
Daqiang Yuan ◽  
Dan Zhao ◽  
Daren J. Timmons ◽  
Hong-Cai Zhou
Keyword(s):  
Thermal Treatment ◽  
Metal Organic Frameworks ◽  
Metal Organic

Epitaxial Growth of “Strain-Free” Indium Oxide Films on (111) Yttria-Stabilized Zirconia by Metal-Organic Chemical Vapor Deposition

2020 ◽  
Vol 1014 ◽  
pp. 22-26
Author(s):  
Yi Zhuo ◽  
Zi Min Chen ◽  
Sheng Dong Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Stabilized Zirconia ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In this work, In2O3 thin films were grown on (111) yttria-stabilized zirconia (YSZ) by metal-organic chemical vapor deposition (MOCVD) at different temperature. It is found that samples grown at low temperature showed lower residual stress but higher mosaicity while high growth temperatures could also cause deterioration in crystal quality due to increasing lattice mismatch. To obtain high quality In2O3 film with low residual strain, a 30-nm thick layer grown at 530 °C was introduced as buffer layer, considering both stress relaxation and crystalline mosaicity. By using two-step growth method, a 400 nm-thick, high quality, near-strain-free In2O3 thin film with the full width at half maximum (FWHM) values of (222) diffraction peaks being as narrow as 648 arcsec was successfully obtained.

Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth

1999 ◽  
Vol 14 (1) ◽  
pp. 12-15 ◽  
Author(s):  
John A. Belot ◽  
Richard J. McNeely ◽  
Anchuan Wang ◽  
Charles J. Reedy ◽  
Tobin J. Marks ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Major Advance ◽  
Stabilized Zirconia ◽  
Organic Precursor ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.

A non-template approach to fabricate mesoporous alumina with predefined morphology by solid-state transformation of Al-based metal–organic frameworks

RSC Advances ◽  
2015 ◽  
Vol 5 (20) ◽  
pp. 15182-15186 ◽  
Author(s):  
Dandan Liu ◽  
Fangna Dai ◽  
Xuehui Li ◽  
Jilei Liang ◽  
Yunqi Liu ◽  
...  
Keyword(s):  
Solid State ◽  
Thermal Treatment ◽  
Metal Organic Frameworks ◽  
Textural Properties ◽  
Treatment Method ◽  
Mesoporous Alumina ◽  
State Transformation ◽  
Solid State Transformation ◽  
Special Morphology ◽  
Metal Organic

Using different Al-MOFs as precursor, mesoporous γ-Al2O3 with special morphology and different textural properties were synthesized by thermal treatment method.

All Metal Organic Deposited High-T c Superconducting Transition Edge Bolometer on Yttria-Stabilized Zirconia Substrate

2016 ◽  
Vol 30 (7) ◽  
pp. 1981-1986 ◽  
Author(s):  
Roya Mohajeri ◽  
Yuri Aparecido Opata ◽  
Anders Christian Wulff ◽  
Jean-Claude Grivel ◽  
Mehdi Fardmanesh
Keyword(s):  
Yttria Stabilized Zirconia ◽  
Superconducting Transition ◽  
Stabilized Zirconia ◽  
Transition Edge ◽  
Metal Organic
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