Cu/MoS2/ITO based hybrid structure for catalysis of hydrazine oxidation

RSC Advances ◽  
2015 ◽  
Vol 5 (20) ◽  
pp. 15374-15378 ◽  
Author(s):  
Sajjad Hussain ◽  
Kamran Akbar ◽  
Dhanasekaran Vikraman ◽  
Muhmmad Arslan Shehzad ◽  
Seunho Jung ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Sputtering ◽  
Hybrid Structure ◽  
Annealing Process ◽  
Large Area ◽  
Post Annealing ◽  
Hydrazine Oxidation

We have successfully demonstrated large-area and continuous MoS2 films grown on indium tin oxide (ITO) substrates by RF sputtering followed by a post-annealing process.

Phototransistor Properties of Indium Tin Oxide Nanowires Grown by RF Sputtering Mechanism and Annealing Process

NANO ◽  
2015 ◽  
Vol 10 (01) ◽  
pp. 1550006 ◽  
Author(s):  
Mohsen Shariati ◽  
Sahel Alishavandi
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Gate Voltage ◽  
Response Times ◽  
Uv Light ◽  
Contrast Ratio ◽  
Rf Sputtering ◽  
Annealing Process ◽  
Cross Sectional ◽  
Oblique Deposition

Photoconducting properties of indium tin oxide (ITO) nanowires grown by RF sputtering associated with annealing process were studied. ITO nanowires have been grown without the use of catalysts or oblique deposition. The cubic cross-sectional nanowires length was of the order of several microns, while their diameter was ~150–250 nm. The photoluminescence (PL) analysis on nanowires proved their excellent photoemission characteristics. Devices based on ITO nanowires showed a substantial increase in conductance of up to three orders of magnitude upon exposure to UV light and showing reproducible UV photoresponse and remaining relatively stable. The rising speed is slightly reduced, while the decay time is prolonged. Such devices also exhibited short response times and significant shifts in the threshold gate voltage. It was found that the dynamic response of the ITO nanowires phototransistor was stable with an on/off current contrast ratio of around 101. It is thus found that the change in the carrier concentrations in constant gate voltage was enhanced by 1.12 × 1017 cm-3 for the 350 nm UV light, corresponding to threshold-voltage shifts of before to after UV-light exposition. The photoconductive gain corresponding to responsivity measured at 350 nm was 0.11 × 105.

The impact of indium tin oxide deposition and post annealing on the passivation property of TOPCon solar cells

Solar Energy ◽  
2018 ◽  
Vol 176 ◽  
pp. 241-247 ◽  
Author(s):  
Ke Tao ◽  
Shuai Jiang ◽  
Rui Jia ◽  
Ying Zhou ◽  
Pengfei Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Post Annealing ◽  
Oxide Deposition ◽  
The Impact

scholarly journals Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering

2021 ◽  
Vol 255 ◽  
pp. 05003
Author(s):  
Hao Chen ◽  
Alessandro Chiasera ◽  
Cristina Armellini ◽  
Giorgio Speranza ◽  
Stefano Varas ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Figure Of Merit ◽  
Rf Sputtering ◽  
Thin Layers ◽  
Radio Frequency Magnetron Sputtering ◽  
Amorphous Thin Films ◽  
Near Ir ◽  
Electric Contacts

Key assets for transparent electric contacts in optoelectronic applications are high conductivity and large transparency over extended spectral range. Indium-Tin-Oxide and Aluminium-doped-Zinc-oxide are commercial examples, with their electrical conductivity resembling those of metals, despite, their transparency being limited up to 1.5µm. This work introduces smooth and compact amorphous thin films of n-type semiconducting WO3-x prepared by RF-sputtering followed by annealing in dry air, as optical layers of tailorable dielectric properties. We evaluate Figure of Merit, combining electrical conductivity and optical transparency, and rate the performances as a transparent conductive layer.

Thin films engineering of indium tin oxide: Large area flat panel displays application

2006 ◽  
Vol 200 (20-21) ◽  
pp. 5751-5759 ◽  
Author(s):  
U. Betz ◽  
M. Kharrazi Olsson ◽  
J. Marthy ◽  
M.F. Escolá ◽  
F. Atamny
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Flat Panel Displays ◽  
Large Area ◽  
Flat Panel

Area-scaling of Organic Solar Cells and Integrated Modules

2009 ◽  
Vol 1212 ◽  
Author(s):  
Seungkeun Choi ◽  
William J Potscavage ◽  
Bernard Kippelen
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Tin Oxide ◽  
Organic Solar Cells ◽  
Indium Tin Oxide ◽  
Series Resistance ◽  
Large Area ◽  
In Series ◽  
Improved Performance ◽  
Number Of Cells

AbstractWe report on the improved performance of large-area organic solar cells and modules by integrating metal grids directly with the indium tin oxide (ITO), thereby reducing the series resistance contribution from the ITO. Devices with different areas (0.1, 7, and 36.4 cm2) were prepared to study the area-dependency of the organic solar cells based on pentacene and C60 heterojunctions. Modules were prepared in which four individual cells (7 cm2) were connected in series and parallel. For the series connected modules, VOC scales linearly with the number of cells while parallel connected modules exhibited multiplied current density as expected.

scholarly journals Determining the Effect of Different Heat Treatments on the Electrical and Morphological Characteristics of Polymer Solar Cells

Energies ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4678 ◽  
Author(s):  
Jun Young Kim
Keyword(s):  
Solar Cells ◽  
Indium Tin Oxide ◽  
Light Absorption ◽  
Polymer Solar Cells ◽  
Morphological Characteristics ◽  
Annealing Process ◽  
Device Fabrication ◽  
Inverted Structure ◽  
Post Annealing ◽  
Annealing Method

The device characteristics of polymer solar cells can be improved through an annealing process. This is especially true of the carrier mobility and the light absorption of P3HT:PCBM, which improves considerably after the annealing process. In the standard structure using indium-tin-oxide (ITO) as an anode, most studies have focused on the post-annealing process, where thermal annealing is performed after device fabrication. This work reports the effects of different annealing methods for inverted polymer solar cells, using ITO as a cathode. Similar levels of light absorption and P3HT crystallinity were obtained regardless of the annealing procedure in the inverted structure. However, compared with the post-annealed device, the pre-annealed device, which was thermally annealed after deposition of the P3HT:PCBM film, exhibited better charge extraction, owing to the superior device resistances and larger MoO3 grain size. Therefore, the pre-annealing method yields better performance than the post-annealing method.

Properties of Indium Tin Oxide Films Prepared Using Reactive RF Magnetron Sputtering

1986 ◽  
Vol 70 ◽  
Author(s):  
Madhav Mehra ◽  
Howard Rhodes
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Visible Range ◽  
Low Oxygen ◽  
Figures Of Merit ◽  
Reactive Rf Magnetron Sputtering ◽  
Tin Oxide Films

ABSTRACTThe results obtained upon reactively RF sputtering indium - tin oxide (ITO) films are presented. It is found that while the amount of oxygen in the chamber is very critical in determining the properties of the films, it is easy to deposit reproducible films even at low oxygen concentrations when using an oxide target. At concentrations of oxygen below 2 vol% the films deposited exhibit almost metallic conductivities, while retaining an average transparency in the visible range of over 85%. The resistivity of these films increases with the oxygen concentration in the chamber, but the transition is not as sharp as that observed upon sputtering a metal target. These films are found to have very good “figures of merit” and are promising in their use as transparent conductors.

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