The growth behavior of graphene on iron-trichloride-solution-soaked copper substrates in a low pressure chemical vapor deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (3) ◽  
pp. 2328-2332 ◽  
Author(s):  
Quanfu Li ◽  
Weihua Liu ◽  
Tuo Qu ◽  
Juan Zhang ◽  
Xin Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Growth Behavior ◽  
Nucleation Density ◽  
Increase Rate ◽  
Pressure Chemical ◽  
Iron Trichloride ◽  
Coverage Increase

A copper substrate soaking-treatment with FeCl3 solution is introduced to significantly reduce the initial graphene nucleation density (up to 6-fold from 0.29 to 0.05 μm−2), and the overall graphene coverage increase-rate is successfully increased.

The role of substrate purity and its crystallographic orientation in the defect density of chemical vapor deposition grown monolayer graphene

RSC Advances ◽  
2015 ◽  
Vol 5 (85) ◽  
pp. 69110-69118 ◽  
Author(s):  
Munu Borah ◽  
Dilip K. Singh ◽  
Kiran M. Subhedar ◽  
Sanjay R. Dhakate
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Crystallographic Orientation ◽  
Defect Density ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Monolayer Graphene ◽  
Vapor Deposition Technique ◽  
Pressure Chemical

Here, we are reporting about the role of the copper substrate purity and its crystallographic orientation in the quality of the graphene grown using a low pressure chemical vapor deposition technique.

Morphology of Optically Transparent Cubic Silicon Carbide Prepared by Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
Michael W. Russell ◽  
Jaime A. Freitas ◽  
James E. Butler
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
X Ray Diffraction ◽  
Electron Microscopies ◽  
Atomic Force ◽  
Pressure Chemical ◽  
Cubic Silicon Carbide

AbstractCrystals of cubic silicon carbide (3C-SiC) were grown in an RF-induction furnace on graphite substrates by atmospheric pressure chemical vapor deposition (APCVD) from a single precursor, methyltrichlorosilane (MTS) in hydrogen. The deposits were characterized by micro-Raman spectroscopy, x-ray diffraction, and atomic force and scanning electron microscopies. Above ˜1600°C preferential 〈110〉 growth directions were identified for the majority of the crystals. At intermediate deposition temperatures (1600–1700°C) the dominant morphology consisted of yellow prismatic crystals heavily twinned along {111 }and {111} At substrate temperatures exceeding ˜1750°C hexagonally-shaped {1111} oriented 3C-SiC platelets were formed with alternating {001 }/{ 101} edges. The dependence of nucleation density, film morphology and film orientation on deposition conditions will be discussed with emphasis on the growth of high quality single crystals of 3C-SiC.

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