Reasons behind the improved thermoelectric properties of poly(3-hexylthiophene) nanofiber networks

RSC Advances ◽  
2014 ◽  
Vol 4 (98) ◽  
pp. 55328-55333 ◽  
Author(s):  
B. Endrődi ◽  
J. Mellár ◽  
Z. Gingl ◽  
C. Visy ◽  
C. Janáky

Enhanced thermoelectric properties of poly(3-hexylthiophene) nanofiber networks were achieved, through controlling both charge carrier concentration and charge carrier mobility.

1994 ◽  
Vol 08 (16) ◽  
pp. 947-958 ◽  
Author(s):  
MD. ABDUL MALIK ◽  
V. D. REDDY ◽  
P. VENUGOPAL REDDY ◽  
D. R. SAGAR ◽  
PRANKISHAN

Electrical conductivity (σ) and thermopower measurements have been carried out on some Mg 1+x Ge x Fe 2−2x O 4 (0 < x < 0.4) ferrite samples over a temperature range 300–700 K. Using the experimental values of Seebeck coefficient at various temperatures, the values of charge carrier concentration have been determined. On the basis of the temperature variation of charge carrier mobility, the conduction mechanism in these ferrites has been discussed.


2011 ◽  
Vol 25 (13) ◽  
pp. 1757-1774
Author(s):  
DALAL. M. HEMEDA ◽  
ABDEL-RAOOF TAWFIK ◽  
OSAMA. M. HEMEDA ◽  
SALLY DEWIDAR

Polycrystalline garnet ferrites Dy 3-x Ni x Fe 5 O 12, where (x = 0.0, 0.1, 0.2, 0.3, 0.4, and 0.5) have been prepared by the standard ceramic technique and their crystalline structure were identified by X-ray diffraction and IR spectroscopy. The differential thermal analysis (DTA) reveals two peaks. It is observed that an endothermic peak between 587 and 498 K for all samples which is due to the magnetic phase change from ferrimagnetic to paramagnetic state. The exothermic peak at about 700 K may be attributed to the crystallization of Dy 3-x Ni x Fe 5 O 12 with garnet structure. DC electrical resistivity, thermoelectric power, charge carrier concentration and charge carrier mobility have been studied at different temperatures: It was found that the DC electrical conductivity increases linearly with increasing temperature ensuring the semiconducting nature of samples. The values of the thermoelectric power were negative for samples of 0.0 < x < 0.4 indicating that the majority of the charge carrier are electrons in these samples while it was positive for sample of x = 0.5 at room temperature, and negative at high temperature. Using the values of the DC electrical conductivity and thermoelectric power, the values of the charge carrier concentration and the charge carrier mobility were calculated. Finally thermal properties have been studied.


2013 ◽  
Vol 88 (12) ◽  
Author(s):  
Cristiano F. Woellner ◽  
Zi Li ◽  
José A. Freire ◽  
Gang Lu ◽  
Thuc-Quyen Nguyen

2016 ◽  
Vol 848 ◽  
pp. 95-98
Author(s):  
Narin Tammarugwattana ◽  
Kitipong Mano ◽  
Kraisak Watthanarungsarit ◽  
Adirek Rangkasikorn ◽  
Navaphun Kayunkid ◽  
...  

The objective of this work is to investigate the optical and electrical properties of bismuth-doped nickel-phthalocyanine thin films (Bi-doped NiPc). The doped films were prepared by thermal co-evaporation as a function of Bi concentration. The amount of Bi in NiPc was controlled via different deposition rates between metal dopant and organic host. The optical properties of the hybrid films were characterized by spectroscopic techniques. Furthermore, the electrical properties e.g. charge carrier concentration and carrier mobility of Al/Bi-doped-NiPc/ITO devices were characterized by current-voltage and capacitance-voltage measurements. The results of optical properties suggest that the crystalline packing of NiPc molecules in all preparation conditions is a combination of α-phase (majority) and β-phase (minority). However, the evolution of β-phase NiPc is observed with the increase of metal doping concentration. Raman spectroscopic results reveal that there is no chemical bond taken place between Bi and NiPc. In addition, with increasing dopant concentration, electrical properties present the enhancement of conducting current of hybrid devices as result from the increment of both charge carrier concentration and charge carrier mobility.


1996 ◽  
Vol 10 (03) ◽  
pp. 319-336 ◽  
Author(s):  
Y. PURUSHOTHAM ◽  
P. VENUGOPAL REDDY

The present work is intended to investigate the thermopower and electrical conductivity studies of some substituted strontium W-type hexagonal ferrites as a function of composition and temperature. On the basis of the sign of the Seebeck coefficient (S), the ferrites under investigation have been classified as n-type semiconductors. Using the experimental values of Seebeck coefficient at various temperatures, the values of charge carrier concentration have been determined. On the basis of the temperature variation of charge carrier mobility, the conduction mechanism in these ferrites has been discussed.


2018 ◽  
Author(s):  
Francesco Salerno ◽  
Beth Rice ◽  
Julia Schmidt ◽  
Matthew J. Fuchter ◽  
Jenny Nelson ◽  
...  

<p>The properties of an organic semiconductor are dependent on both the chemical structure of the molecule involved, and how it is arranged in the solid-state. It is challenging to extract the influence of each individual factor, as small changes in the molecular structure often dramatically change the crystal packing and hence solid-state structure. Here, we use calculations to explore the influence of the nitrogen position on the charge mobility of a chiral organic molecule when the crystal packing is kept constant. The transfer integrals for a series of enantiopure aza[6]helicene crystals sharing the same packing were analysed in order to identify the best supramolecular motifs to promote charge carrier mobility. The regioisomers considered differ only in the positioning of the nitrogen atom in the aromatic scaffold. The simulations showed that even this small change in the chemical structure has a strong effect on the charge transport in the crystal, leading to differences in charge mobility of up to one order of magnitude. Some aza[6]helicene isomers that were packed interlocked with each other showed high HOMO-HOMO integrals (up to 70 meV), whilst molecules arranged with translational symmetry generally afforded the highest LUMO-LUMO integrals (40 - 70 meV). As many of the results are not intuitively obvious, a computational approach provides additional insight into the design of new semiconducting organic materials.</p>


1994 ◽  
Vol 235-240 ◽  
pp. 539-540
Author(s):  
C. Ström ◽  
S.-G. Eriksson ◽  
J. Albertsson ◽  
N. Winzek

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