Direct comparison on the structural and optical properties of metal-catalytic and self-catalytic assisted gallium nitride (GaN) nanowires by chemical vapor deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (85) ◽  
pp. 45100-45108 ◽  
Author(s):  
V. Purushothaman ◽  
P. Sundara Venkatesh ◽  
R. Navamathavan ◽  
K. Jeganathan
Keyword(s):  
Optical Properties ◽  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Structural And Optical Properties ◽  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Vapor Liquid

The structural and optical properties of GaN nanowires (NWs) grown by catalytic and self-catalytic-assisted vapor liquid solid approach using chemical vapor deposition (CVD) are reported.

Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
J. Su ◽  
M. Gherasimova ◽  
G. Cui ◽  
J. Han ◽  
S. Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mesoporous Molecular Sieves ◽  
Organic Chemical ◽  
Vapor Liquid Solid ◽  
Metal Organic ◽  
Vls Growth ◽  
Organic Chemical Vapor Deposition ◽  
Vapor Liquid

ABSTRACTWe report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

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