Gold nanoparticle–ultrananocrystalline diamond hybrid structured materials for high-performance optoelectronic device applications

Nanoscale ◽  
2015 ◽  
Vol 7 (10) ◽  
pp. 4377-4385 ◽  
Author(s):  
Kamatchi Jothiramalingam Sankaran ◽  
Srinivasu Kunuku ◽  
Balakrishnan Sundaravel ◽  
Ping-Yen Hsieh ◽  
Huang-Chin Chen ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Gold Nanoparticle ◽  
Field Emission ◽  
High Performance ◽  
Optoelectronic Device ◽  
Au Nps ◽  
Structured Materials ◽  
Field Emission Properties ◽  
Ultrananocrystalline Diamond ◽  
Device Applications

Au-NPs hybridized in ultrananocrystalline diamond materials markedly enhance their electrical conductivity and field emission properties.

Using an Au interlayer to enhance electron field emission properties of ultrananocrystalline diamond films

2012 ◽  
Vol 112 (10) ◽  
pp. 103711 ◽  
Author(s):  
Huang-Chin Chen ◽  
Kamatchi Jothiramalingam Sankaran ◽  
Shen-Chuan Lo ◽  
Li-Jiaun Lin ◽  
Nyan-Hwa Tai ◽  
...  
Keyword(s):  
Field Emission ◽  
Diamond Films ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Ultrananocrystalline Diamond ◽  
Electron Field ◽  
Electron Field Emission Properties

LaB6 nanowires and their field emission properties

2005 ◽  
Vol 901 ◽  
Author(s):  
Han Zhang ◽  
Jie Tang ◽  
Qi Zhang ◽  
Gongpu Zhao ◽  
Guang Yang ◽  
...  
Keyword(s):  
Field Emission ◽  
High Performance ◽  
Rectangular Cross Section ◽  
Chemical Vapor ◽  
Emission Current Density ◽  
Chemical Vapor Deposition Method ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Microscopes ◽  
Electron Emitters

AbstractFor field-induced electron emission, the two factors that enable a high emission current density at low applied voltages are (a) low work function of the emitter and (b) sharpness of the emitter tip. We have developed and applied a chemical vapor deposition method to synthesize single-crystalline LaB6 nanowires for applications as point electron emitters. The crystallographic orientation of the grown nanowires can be controlled by the catalysts used in synthesis and their typical diameter is ranged from below 20 nm to over 100 nm. The nanowires’ tip is either hemispherical or flat top with rectangular cross-section depending on the catalyst being utilized. The field emission properties have also been measured from the single nanowire emitters and the results are discussed for applications as point electron sources used in high performance electron optical instruments such as the transmission and scanning electron microscopes.

scholarly journals Toward the use of CVD-grown MoS2 nanosheets as field-emission source

2018 ◽  
Vol 9 ◽  
pp. 1686-1694 ◽  
Author(s):  
Geetanjali Deokar ◽  
Nitul S Rajput ◽  
Junjie Li ◽  
Francis Leonard Deepak ◽  
Wei Ou-Yang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Field Emission ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Flat Panel Displays ◽  
Field Emission Properties ◽  
Turn On ◽  
Transmission Electron ◽  
Vertically Aligned ◽  
20 Nm

Densely populated edge-terminated vertically aligned two-dimensional MoS2 nanosheets (NSs) with thicknesses ranging from 5 to 20 nm were directly synthesized on Mo films deposited on SiO2 by sulfurization. The quality of the obtained NSs was analyzed by scanning electron and transmission electron microscopy, and Raman and X-ray photoelectron spectroscopy. The as-grown NSs were then successfully transferred to the substrates using a wet chemical etching method. The transferred NSs sample showed excellent field-emission properties. A low turn-on field of 3.1 V/μm at a current density of 10 µA/cm2 was measured. The low turn-on field is attributed to the morphology of the NSs exhibiting vertically aligned sheets of MoS2 with sharp and exposed edges. Our findings show that the fabricated MoS2 NSs could have a great potential as robust high-performance electron-emitter material for various applications such as microelectronics and nanoelectronics, flat-panel displays and electron-microscopy emitter tips.

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