scholarly journals Conductance measurements of individual polypyrrole nanobelts

Nanoscale ◽  
2015 ◽  
Vol 7 (6) ◽  
pp. 2301-2305 ◽  
Author(s):  
C. Hentschel ◽  
L. Jiang ◽  
D. Ebeling ◽  
J. C. Zhang ◽  
X. D. Chen ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Conduction ◽  
Soft Materials ◽  
General Effect ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Conduction Properties

We present here a study on the electrical conduction properties of individual polypyrrole nanobelts by using conductive atomic force microscopy and discuss a general effect while probing soft materials.

Investigation of Epitaxial GaN Films by Conductive Atomic Force Microscopy

2003 ◽  
Vol 764 ◽  
Author(s):  
S. Dogan ◽  
J. Spradlin ◽  
J. Xie ◽  
A. A. Pomarico ◽  
R. Cingolani ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Sample Surface ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Topological Features ◽  
Atomic Force ◽  
Local Current ◽  
Semiconductor Junction ◽  
Surrounding Areas ◽  
Conduction Properties

AbstractThe current conduction in GaN is very topical and is the topic of a vast amount of research. By simultaneously mapping the topography and the current distribution, conductive atomic force microscopy (C-AFM) has the potential to establish a correlation between topological features and localized current paths. In this study, this technique was applied to image the conduction properties of as-grown and post-growth chemically etched samples GaN epitaxial layers on a microscopic scale. Our results show that prismatic planes have a significantly higher conductivity than the surrounding areas of the sample surface. A large and stable local current was mainly observed from the walls of the etched pits, under forward and reverse bias of the metallized AFM tip/semiconductor junction.

Electrical Conduction of Conjugated Molecular SAMs Studied by Conductive Atomic Force Microscopy

2002 ◽  
Vol 106 (23) ◽  
pp. 5886-5892 ◽  
Author(s):  
Takao Ishida ◽  
Wataru Mizutani ◽  
Yoichiro Aya ◽  
Hisato Ogiso ◽  
Shinya Sasaki ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Conduction ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Fault Isolation of MOL and FEOL Buried Defects Using Conductive Atomic Force Microscopy as a Complement to Passive Voltage Contrast Imaging

2017 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Linda Conohan ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Cmos Technology ◽  
Fault Isolation ◽  
Contrast Imaging ◽  
Conductive Atomic Force Microscopy ◽  
Isolation Technique ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force ◽  
Voltage Contrast

Abstract Atomic force microscopy (AFM) methods have provided a wealth of knowledge into the topographic, electrical, mechanical, magnetic, and electrochemical properties of surfaces and materials at the micro- and nanoscale over the last several decades. More specifically, the application of conductive AFM (CAFM) techniques for failure analysis can provide a simultaneous view of the conductivity and topographic properties of the patterned features. As CMOS technology progresses to smaller and smaller devices, the benefits of CAFM techniques have become apparent [1-3]. Herein, we review several cases in which CAFM has been utilized as a fault-isolation technique to detect middle of line (MOL) and front end of line (FEOL) buried defects in 20nm technologies and beyond.

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

Imaging and nanoprobing of graphene layers for interconnects by conductive atomic force microscopy

2015 ◽  
Vol 54 (5S) ◽  
pp. 05EB02 ◽  
Author(s):  
Li Zhang ◽  
Masayuki Katagiri ◽  
Taishi Ishikura ◽  
Makoto Wada ◽  
Hisao Miyazaki ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Conductive Atomic Force Microscopy ◽  
Graphene Layers ◽  
Force Microscopy ◽  
Atomic Force

Switching of nanosized filaments in NiO by conductive atomic force microscopy

2012 ◽  
Vol 112 (6) ◽  
pp. 064310 ◽  
Author(s):  
F. Nardi ◽  
D. Deleruyelle ◽  
S. Spiga ◽  
C. Muller ◽  
B. Bouteille ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force
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