Correlative electron and X-ray microscopy: probing chemistry and bonding with high spatial resolution

Nanoscale ◽  
2015 ◽  
Vol 7 (5) ◽  
pp. 1534-1548 ◽  
Author(s):  
Angela E. Goode ◽  
Alexandra E. Porter ◽  
Mary P. Ryan ◽  
David W. McComb

Benefits and challenges of correlative spectroscopy: electron energy-loss spectroscopy in the scanning transmission electron microscope (STEM-EELS) and X-ray absorption spectroscopy in the scanning transmission X-ray microscope (STXM-XAS).

Author(s):  
John B. Vander Sande ◽  
Thomas F. Kelly ◽  
Douglas Imeson

In the scanning transmission electron microscope (STEM) a fine probe of electrons is scanned across the thin specimen, or the probe is stationarily placed on a volume of interest, and various products of the electron-specimen interaction are then collected and used for image formation or microanalysis. The microanalysis modes usually employed in STEM include, but are not restricted to, energy dispersive X-ray analysis, electron energy loss spectroscopy, and microdiffraction.


2000 ◽  
Vol 07 (04) ◽  
pp. 475-494 ◽  
Author(s):  
O. STÉPHAN ◽  
A. GLOTER ◽  
D. IMHOFF ◽  
M. KOCIAK ◽  
C. MORY ◽  
...  

The basics of electron energy loss spectroscopy (EELS) performed in the context of a scanning transmission electron microscope are described. This includes instrumentation, information contained in an EELS spectrum, data acquisition and processing, and some illustrations by a few examples.


2002 ◽  
Vol 747 ◽  
Author(s):  
A. Roy Chowdhuri ◽  
C. G. Takoudis ◽  
R. F. Klie ◽  
N. D. Browning

ABSTRACTThin films of aluminum oxide were deposited on clean Si(100) substrates using trimethylaluminum and oxygen at 300°C. Infrared spectroscopic and x-ray photoelectron spectroscopic analyses of these films showed no aluminum silicate or SiO2 phase formation at the film/substrate interface. The O/Al ratio in the as deposited film was found to be higher than that in stoichiometric Al2O3. On annealing the as deposited samples in Ar at higher temperatures, a peak due to the transverse optical phonon for the Si-O-Si stretching mode appeared in the infrared spectra. A combination of Z-contrast imaging and electron energy loss spectroscopy in the scanning transmission electron microscope confirmed that the annealed samples developed a layer of silicon dioxide at the aluminum oxide-Si interface. Z-contrast images and electron energy loss spectra, obtained while heating the sample inside the scanning transmission electron microscope were used to follow the interfacial SiO2 formation.


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