Twin-driven thermoelectric figure-of-merit enhancement of Bi2Te3 nanowires

Nanoscale ◽  
2014 ◽  
Vol 6 (11) ◽  
pp. 6158-6165 ◽  
Author(s):  
Ho Sun Shin ◽  
Seong Gi Jeon ◽  
Jin Yu ◽  
Yong-Sung Kim ◽  
Hyun Min Park ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Figure Of Merit ◽  
Crystal Defects ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

Thermoelectric figure-of-merits (ZT) are enhanced or degraded by crystal defects such as twins and excess atoms that are correlated with thermal conductivity (k) and carrier concentration (n).

THERMOELECTRIC PROPERTIES OF n-TYPE Bi2Te3–Bi2Se3 ALLOYS

1967 ◽  
Vol 45 (11) ◽  
pp. 3611-3626 ◽  
Author(s):  
C. H. Champness ◽  
W. B. Muir ◽  
P. T. Chiang
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Composition Range ◽  
Energy Gap ◽  
Dopant Concentration ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Close Relationship

Room temperature measurements of the Seebeck coefficient (α), electrical conductivity (σ), thermal conductivity (κ), and thermoelectric figure of merit (Z) were made on samples of n-type Bi2Te3–Bi2Se3 pseudobinary alloys over the whole composition range. To obtain maximum Z, doping was carried out at each composition by the addition of CuBr (donor) from 0 to 66 mole% Bi2Se3 and by lead and excess Se (acceptors) thereafter. Experimentally determined values of the materials parameter β were found to saturate (β∞) at high conductivity in a given alloy and close relationship was found between β∞ and Zmax The optimized values of σ, κ, and CuBr-dopant concentration were found to show a maximum at 33 mole% Bi2Se3, while the optimized value of α showed a minimum at this composition. These results, together with the fact that no maximum was observed in σ at constant α (i.e., constant carrier concentration), suggest that a maximum in the carrier concentration occurs in optimized material at this composition. Further support for this was provided by the observed variation of σ with α at a given composition which was found to be more consistent with a minimum in the apparent energy gap near 33% Bi2Se3 rather than the maximum reported by other workers.

Tuning the carrier concentration using Zintl chemistry in Mg3Sb2, and its implications for thermoelectric figure-of-merit

2016 ◽  
Vol 18 (8) ◽  
pp. 6191-6200 ◽  
Author(s):  
A. Bhardwaj ◽  
N. S. Chauhan ◽  
S. Goel ◽  
Vijeta Singh ◽  
J. J. Pulikkotil ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Optimal Control ◽  
Carrier Concentration ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Anionic Framework ◽  
Mass Fluctuation

The Zn2+ substitution on Mg2+ site in the anionic framework (Mg2Sb2)2− of Mg3Sb2 results in an optimal control over the carrier concentration and the reduction in thermal conductivity via mass fluctuation scattering which drives the system to achieve a ZT of 0.37 at 773 K in Mg2.9Zn0.1Sb2.

scholarly journals A first-principles study of the effects of electron–phonon coupling on the thermoelectric properties: a case study of the SiGe compound

2018 ◽  
Vol 6 (25) ◽  
pp. 12125-12131 ◽  
Author(s):  
D. D. Fan ◽  
H. J. Liu ◽  
L. Cheng ◽  
J. H. Liang ◽  
P. H. Jiang
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
First Principles ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Thermoelectric Figure Of Merit ◽  
Phonon Coupling ◽  
Thermoelectric Figure ◽  
Electron Phonon Coupling

The lattice thermal conductivity of the SiGe compound can be significantly reduced by electron–phonon coupling at higher carrier concentration, which in turn obviously enhances its thermoelectric figure-of-merit.

High Thermoelectric Performance of p-Type Bi0.5Sb1.5Te3+xTe Crystals Prepared via Gradient Freezing

2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.

Influence of multi-sintering on the thermoelectric properties of Bi2Sr2Co2Oy ceramics

2019 ◽  
Vol 34 (02) ◽  
pp. 2050019 ◽  
Author(s):  
Y. Zhang ◽  
M. M. Fan ◽  
C. C. Ruan ◽  
Y. W. Zhang ◽  
X.-J. Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Sintered Sample ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
The Third ◽  
Ceramic Samples ◽  
Optimum Formula

[Formula: see text] ceramic samples have a structure similar to phonon glass electronic crystals, and their thermoelectric properties can be effectively adjusted through repeated grinding and sintering. The results show that multi-sintering can make their grain refined and increase their grain boundary, which will effectively increase density and phonon scattering. Finally, multi-sintering can reduce the resistivity and thermal conductivity, thus obviously improve thermoelectric figure of merit [Formula: see text] of [Formula: see text]. The optimum [Formula: see text] value of 0.26 is achieved at 923 K by the third sintered sample.

Effects of Ce filling fraction and Fe content on the thermoelectric properties of Co-rich CeyFexCo4−xSb12

2001 ◽  
Vol 16 (3) ◽  
pp. 837-843 ◽  
Author(s):  
Xinfeng Tang ◽  
Lidong Chen ◽  
Takashi Goto ◽  
Toshio Hirai
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Single Phase ◽  
Lattice Thermal Conductivity ◽  
Hole Concentration ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Filling Fraction ◽  
Fe Content

Single-phase filled skutterudite compounds, CeyFexCo4−xSb12 (x = 0 to 3.0, y = 0 to 0.74), were synthesized by a melting method. The effects of Fe content and Ce filling fraction on the thermoelectric properties of CeyFexCo4−xSb12 were investigated. The lattice thermal conductivity of Ce-saturated CeyFexCo4−xSb12, y being at the maximum corresponding to x, decreased with increasing Fe content (x) and reached its minimum at about x = 1.5. When x was 1.5, lattice thermal conductivity decreased with increasing Ce filling fraction till y = 0.3 and then began to increase after reaching the minimum at y = 0.3. Hole concentration and electrical conductivity of Cey Fe1.5Co2.5Sb12 decreased with increasing Ce filling fraction. The Seebeck coefficient increased with increasing Ce filling fraction. The greatest dimensionless thermoelectric figure of merit T value of 1.1 was obtained at 750 K for the composition of Ce0.28Fe1.52Co2.48Sb12.

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

scholarly journals Термоэлектрические свойства нанокомпозитного Bi-=SUB=-0.45-=/SUB=-Sb-=SUB=-1.55-=/SUB=-Te-=SUB=-2.985-=/SUB=- с микрочастицами SiO-=SUB=-2-=/SUB=-

2019 ◽  
Vol 53 (6) ◽  
pp. 751
Author(s):  
А.А. Шабалдин ◽  
П.П. Константинов ◽  
Д.А. Курдюков ◽  
Л.Н. Лукьянова ◽  
А.Ю. Самунин ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Wide Temperature Range ◽  
Figure Of Merit ◽  
Nanostructured Material ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Figure ◽  
P Type

AbstractNanocomposite thermoelectrics based on Bi_0.45Sb_1.55Te_2.985 solid solution of p -type conductivity are fabricated by the hot pressing of nanopowders of this solid solution with the addition of SiO_2 microparticles. Investigations of the thermoelectric properties show that the thermoelectric power of the nanocomposites increases in a wide temperature range of 80–420 K, while the thermal conductivity considerably decreases at 80–320 K, which, despite a decrease in the electrical conductivity, leads to an increase in the thermoelectric efficiency in the nanostructured material without the SiO_2 addition by almost 50% (at 300 K). When adding SiO_2, the efficiency decreases. The initial thermoelectric fabricated without nanostructuring, in which the maximal thermoelectric figure of merit ZT = 1 at 390 K, is most efficient at temperatures above 350 K.

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