Dynamic carbon mitigation analysis: the role of thin-film photovoltaics

2014 ◽  
Vol 7 (6) ◽  
pp. 1810-1818 ◽  
Author(s):  
C. J. M. Emmott ◽  
N. J. Ekins-Daukes ◽  
J. Nelson

We assess the net carbon emissions during a transition to photovoltaic power generation, comparing established and emerging thin-film PV technologies.

2018 ◽  
Vol 57 (40) ◽  
pp. 13528-13538 ◽  
Author(s):  
Yuchen Sun ◽  
Liang Cheng ◽  
Takuji Shintani ◽  
Yasuhiro Tanaka ◽  
Tomoki Takahashi ◽  
...  

2012 ◽  
Vol 193-194 ◽  
pp. 239-242
Author(s):  
Xiao Fu ◽  
Shi Guang Shen ◽  
Jie Yin

Under the background of global warming, green low carbon buildings have become a trend which is considered to reduce the carbon emissions. This paper, on the basis of analysis on the traditional low carbon building design methods, puts forward a new concept of design supported by the technology of photovoltaic power generation. This paper introduces the development and principles of photovoltaic power generation and emphasizes the BIPV technology. Green low carbon building design based on BIPV can be divided into active and passive design, which all has a positive influence on the green low carbon design.


1984 ◽  
Vol 37 (4) ◽  
pp. 449
Author(s):  
D Haneman

Current methods of producing electricity from solar energy are summarized. The role of photovoltaics is described and the increasing importance of thin film technology. The photovoltaic industry is doing well over $108 worth of business in 1984 with a growth rate of about 50 % p.a. Already over 15 % of the output is in the form of thin films, practically all as amorphous hydrogenated silicon. A number of other thin film systems are being actively explored, most of them semiconductor heterojunctions, including CdS: Cu2S and CuInSe2 : CdS. The problems of durability and cost effective production are yielding under major research and development efforts on thin semiconductor films and interfaces.


Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


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