Insulator–half metal transition driven by hole doping: a density functional study of Sr-doped La2VMnO6

2014 ◽  
Vol 43 (23) ◽  
pp. 8698 ◽  
Author(s):  
Ningning Zu ◽  
Jing Wang ◽  
Ying Wang ◽  
Zhijian Wu
2016 ◽  
Vol 18 (1) ◽  
pp. 318-324 ◽  
Author(s):  
Dandan Yu ◽  
Yanyu Liu ◽  
Lili Sun ◽  
Ping Wu ◽  
Wei Zhou

Li-doped single-layer SnS2 is active for overall water splitting whereas Mg(Al)-doped SnS2 is suitable only for photo-oxidation.


RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18371-18380
Author(s):  
Erik Bhekti Yutomo ◽  
Fatimah Arofiati Noor ◽  
Toto Winata

The number of dopant atoms is a parameter that can effectively tune the electronic and magnetic properties of graphitic and pyridinic N-doped graphene.


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