Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

2015 ◽  
Vol 44 (9) ◽  
pp. 2744-2756 ◽  
Author(s):  
Yumeng Shi ◽  
Henan Li ◽  
Lain-Jong Li

This review describes recent progress in the synthesis of transition metal dichalcogenides via vapour deposition methods with the control of the layer number and band gap energy.

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7590
Author(s):  
Luca Seravalli ◽  
Matteo Bosi

Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.


2019 ◽  
Vol 30 (18) ◽  
pp. 182002 ◽  
Author(s):  
Zhepeng Zhang ◽  
Pengfei Yang ◽  
Min Hong ◽  
Shaolong Jiang ◽  
Guanchao Zhao ◽  
...  

2015 ◽  
Vol 44 (24) ◽  
pp. 8859-8876 ◽  
Author(s):  
Xidong Duan ◽  
Chen Wang ◽  
Anlian Pan ◽  
Ruqin Yu ◽  
Xiangfeng Duan

The recent progress, opportunities and challenges in exploring two-dimensional transition metal dichalcogenides as atomically thin semiconductors are reviewed, including the material synthesis and novel device concepts.


2016 ◽  
Vol 04 (04) ◽  
pp. 1640010 ◽  
Author(s):  
Hongfei Liu

Atomic layer deposition (ALD) has long been developed for conformal coating thin films on planar surfaces and complex structured substrates based on its unique sequential process and self-limiting surface chemistry. In general, the coated thin films can be dielectrics, semiconductors, conductors, metals, etc., while the targeted surface can vary from those of particles, wires, to deep pores, through holes, and so on. The ALD coating technique, itself, was developed from gas-phase chemical vapor deposition, but now it has been extended even to liquid phase coating/growth. Because the thickness of ALD growth is controlled in atomic level ([Formula: see text]0.1[Formula: see text]nm), it has recently been employed for producing two-dimensional (2D) materials, typically semiconducting nanosheets of transition metal dichalcogenides (TMDCs). In this paper, we briefly introduce recent progress in ALD of multifunctional oxides and 2D TMDCs with the focus being placed on suitable ALD precursors and their ALD processes (for both binary compounds and ternary alloys), highlighting the remaining challenges and promising potentials.


CrystEngComm ◽  
2021 ◽  
Author(s):  
Xia Jiang ◽  
Fei Chen ◽  
Shichao Zhao ◽  
Weitao Su

Two-dimensional (2D) vertical heterostructures (HSs), which are constructed via vertically stacking two or more 2D transition metal dichalcogenide (TMDC) materials, had been intensively studied during the past several years. However,...


Nanoscale ◽  
2022 ◽  
Author(s):  
Yuhan Zhao ◽  
Yibo Yan ◽  
Jong-Min Lee

The development of graphene promotes the research of similar two-dimensional (2D) materials, especially 2D transition metal dichalcogenides (TMDCs) with semiconductor properties.


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