Electrical percolation thresholds of semiconducting single-walled carbon nanotube networks in field-effect transistors

2015 ◽  
Vol 17 (10) ◽  
pp. 6874-6880 ◽  
Author(s):  
Ho-Kyun Jang ◽  
Jun Eon Jin ◽  
Jun Hee Choi ◽  
Pil-Soo Kang ◽  
Do-Hyun Kim ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Network Density ◽  
Electrical Characteristics ◽  
Single Walled Carbon Nanotube ◽  
Electrical Percolation ◽  
Single Walled Carbon ◽  
Percolation Thresholds ◽  
Carbon Nanotube Networks

We related the network density of semiconducting single-walled carbon nanotube networks at the percolation threshold to their electrical characteristics.

Y-Contacted High-Performance n-Type Single-Walled Carbon Nanotube Field-Effect Transistors: Scaling and Comparison with Sc-Contacted Devices

Nano Letters ◽  
2009 ◽  
Vol 9 (12) ◽  
pp. 4209-4214 ◽  
Author(s):  
Li Ding ◽  
Sheng Wang ◽  
Zhiyong Zhang ◽  
Qingsheng Zeng ◽  
Zhenxing Wang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

scholarly journals Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Chien-Wei Liu ◽  
Bau-Tong Dai ◽  
Ming-Yen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Electrical Characteristics ◽  
Carbon Nanotube Network ◽  
Carbon Nanotube Networks

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage(Id-Vd), drain current versus gate voltage(Id-Vg), mobility, subthreshold slope (SS), and transconductance(Gm), were obtained.

scholarly journals Customizing the Polarity of Single‐Walled Carbon‐Nanotube Field‐Effect Transistors Using Solution‐Based Additives

2019 ◽  
Vol 6 (3) ◽  
pp. 1900789 ◽  
Author(s):  
Jorge Mario Salazar‐Rios ◽  
Aprizal Akbar Sengrian ◽  
Wytse Talsma ◽  
Herman Duim ◽  
Mustapha Abdu‐Aguye ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon
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