Spin-semiconducting properties in silicene nanoribbons

2014 ◽  
Vol 16 (29) ◽  
pp. 15477-15482 ◽  
Author(s):  
Yin-Chang Zhao ◽  
Jun Ni
Keyword(s):  
Electric Field ◽  
Compressive Strain ◽  
Semiconducting Properties ◽  
Silicene Nanoribbons ◽  
Spin Gapless Semiconductors

Our investigations show that silicene nanoribbons with one sawtooth edge are spin-semiconductors (left). They become spin gapless semiconductors under a suitable electric field (middle) or compressive strain (right).

Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics

2014 ◽  
Vol 47 (9) ◽  
pp. 094003 ◽  
Author(s):  
K Tsukagoshi ◽  
S-L Li ◽  
H Miyazaki ◽  
A Aparecido-Ferreira ◽  
S Nakaharai
Keyword(s):  
Electric Field ◽  
Bilayer Graphene ◽  
Next Generation ◽  
Semiconducting Properties

Adatom-induced local reconstructions in zigzag silicene nanoribbons: Spin semiconducting properties and large spin thermopowers

2017 ◽  
Vol 667 ◽  
pp. 113-119 ◽  
Author(s):  
X.F. Yang ◽  
X.L. Zou ◽  
Y.W. Kuang ◽  
Z.G. Shao ◽  
J. Zhang ◽  
...  
Keyword(s):  
Semiconducting Properties ◽  
Silicene Nanoribbons ◽  
Large Spin

scholarly journals Strain and Electric Field Modulated Indirect to Direct Band Transition of Monolayer GaInS2

2021 ◽  
Author(s):  
Atanu Betal ◽  
Jayanta Bera ◽  
Satyajit Sahu
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Band Gap ◽  
Density Functional ◽  
Compressive Strain ◽  
Direct Band Gap ◽  
Td Dft ◽  
Direct Band ◽  
Band Transition ◽  
Indirect Band Gap

Abstract Strain and electric field dependent electronic and optical properties have been calculated using density functional theory (DFT) and time-dependent DFT (TD-DFT) for GaInS2 monolayer. GaInS2 monolayer shows an indirect band gap of 1.79 eV where valance band maxima (VBM) and conduction band maxima (CBM) rest between K and Γ point and at Γ point, respectively. Under a particular tensile strain (8%), a phase change from semiconductor to semimetal has been noticed. While at 4% compressive strain, the material changes from indirect to direct band gap of 2.22 eV having VBM and CBM at Γ point. With further increase in compressive strain, CBM shifted from Γ to M point, which leads to an indirect band gap again. The electric field also affects the band structure of monolayer GaInS2 and shows the transition between indirect to direct band gap at positive electric field of 4 V/nm, which acts normal to the surface. The strain-dependent optical properties are also calculated, which suggests that the absorption coefficient increases with compressive strain.

scholarly journals Piezoelectrically enhanced exchange bias in multiferroic heterostructures

2014 ◽  
Vol 2 (38) ◽  
pp. 8018-8022 ◽  
Author(s):  
Tae Y. Kim ◽  
Seungwoo Song ◽  
Hyun M. Jang ◽  
John A. Peters ◽  
Young K. Jeong
Keyword(s):  
Electric Field ◽  
Exchange Bias ◽  
Compressive Strain ◽  
Multiferroic Heterostructures

The exchange bias is significantly enhanced by the piezoelectric compressive strain stemming from the PMN–PT substrate when applying an electric field, leading to reversible magnetic switches.

Effects of 48 defects and external electric field on the electronic properties of silicene nanoribbons

2017 ◽  
Vol 4 (8) ◽  
pp. 085035
Author(s):  
Yayun Zhao ◽  
Zhiyong Wang ◽  
Jianrong Xiao ◽  
Mengyao Sun ◽  
Junchao Jin
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Silicene Nanoribbons
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