Sorting particles with nanoscale thermophoretic devices: how efficient is it?

2014 ◽  
Vol 16 (26) ◽  
pp. 13279-13286 ◽  
Author(s):  
Anders Lervik ◽  
Fernando Bresme
Keyword(s):  
Particle Separation ◽  
Structural Defects ◽  
Thermally Driven

Nanoscale structural defects significantly enhance the efficiency of particle separation using thermally driven nanopumps.

Transmission electron microscopy of composite materials

1988 ◽  
Vol 46 ◽  
pp. 1012-1015
Author(s):  
K.P.D. Lagerlof
Keyword(s):  
Composite Materials ◽  
Physical Properties ◽  
Structural Defects ◽  
Structural Composites ◽  
Multiphase Materials ◽  
Structural Reinforcement ◽  
Transmission Electron ◽  
Reinforced Fiber ◽  
Particulate Reinforced Composites ◽  
Definition Of

Although most materials contain more than one phase, and thus are multiphase materials, the definition of composite materials is commonly used to describe those materials containing more than one phase deliberately added to obtain certain desired physical properties. Composite materials are often classified according to their application, i.e. structural composites and electronic composites, but may also be classified according to the type of compounds making up the composite, i.e. metal/ceramic, ceramic/ceramie and metal/semiconductor composites. For structural composites it is also common to refer to the type of structural reinforcement; whisker-reinforced, fiber-reinforced, or particulate reinforced composites [1-4].For all types of composite materials, it is of fundamental importance to understand the relationship between the microstructure and the observed physical properties, and it is therefore vital to properly characterize the microstructure. The interfaces separating the different phases comprising the composite are of particular interest to understand. In structural composites the interface is often the weakest part, where fracture will nucleate, and in electronic composites structural defects at or near the interface will affect the critical electronic properties.

High-angle electron scattering from amorphous silicon

1995 ◽  
Vol 53 ◽  
pp. 162-163
Author(s):  
M. Libera ◽  
J.A. Ott ◽  
K. Siangchaew ◽  
L. Tsung
Keyword(s):  
Electron Scattering ◽  
Amorphous Material ◽  
Structural Defects ◽  
Constant Thickness ◽  
High Angle ◽  
Fast Electrons ◽  
Angle Scattering ◽  
Stem Image ◽  
Amorphous Si ◽  
Thermal Vibrations

Channeling occurs when fast electrons follow atomic strings in a crystal where there is a minimum in the potential energy (1). Channeling has a strong effect on high-angle scattering. Deviations in atomic position along a channel due to structural defects or thermal vibrations increase the probability of scattering (2-5). Since there are no extended channels in an amorphous material the question arises: for a given material with constant thickness, will the high-angle scattering be higher from a crystal or a glass?Figure la shows a HAADF STEM image collected using a Philips CM20 FEG TEM/STEM with inner and outer collection angles of 35mrad and lOOmrad. The specimen (6) was a cross section of singlecrystal Si containing: amorphous Si (region A), defective Si containing many stacking faults (B), two coherent Ge layers (CI; C2), and a contamination layer (D). CBED patterns (fig. lb), PEELS spectra, and HAADF signals (fig. lc) were collected at 106K and 300K along the indicated line.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Dechannealing Study of Nanocrystalline Si:H Layers Produced by High Dose Hydrogen Irradiation of Silicon Crystals

1998 ◽  
Vol 536 ◽  
Author(s):  
V. P. Popov ◽  
A. K. Gutakovsky ◽  
I. V. Antonova ◽  
K. S. Zhuravlev ◽  
E. V. Spesivtsev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Nanocrystalline Structure ◽  
Structural Defects ◽  
High Dose ◽  
Silicon Crystals ◽  
Strong Energy ◽  
Transmission Electron ◽  
Hydrogen Implantation

AbstractA study of Si:H layers formed by high dose hydrogen implantation (up to 3x107cm-2) using pulsed beams with mean currents up 40 mA/cm2 was carried out in the present work. The Rutherford backscattering spectrometry (RBS), channeling of He ions, and transmission electron microscopy (TEM) were used to study the implanted silicon, and to identify the structural defects (a-Si islands and nanocrystallites). Implantation regimes used in this work lead to creation of the layers, which contain hydrogen concentrations higher than 15 at.% as well as the high defect concentrations. As a result, the nano- and microcavities that are created in the silicon fill with hydrogen. Annealing of this silicon removes the radiation defects and leads to a nanocrystalline structure of implanted layer. A strong energy dependence of dechanneling, connected with formation of quasi nanocrystallites, which have mutual small angle disorientation (<1.50), was found after moderate annealing in the range 200-500°C. The nanocrystalline regions are in the range of 2-4 nm were estimated on the basis of the suggested dechanneling model and transmission electron microscopy (TEM) measurements. Correlation between spectroscopic ellipsometry, visible photoluminescence, and sizes of nanocrystallites in hydrogenated nc-Si:H is observed.

EXPERIMENTAL STUDY OF A THERMALLY DRIVEN COMPOSITE ADSORPTION REFRIGERATOR

2015 ◽  
Vol 46 (4) ◽  
pp. 333-345
Author(s):  
Q. W. Pan ◽  
Ruzhu Wang ◽  
Z. S. Lu ◽  
Liwei Wang
Keyword(s):  
Experimental Study ◽  
Thermally Driven

Dental Development in Children After Chemotherapy

2017 ◽  
Vol 68 (6) ◽  
pp. 1397-1400
Author(s):  
Cristina Bica ◽  
Mihaela Chincesan ◽  
Daniela Esian ◽  
Krisztina Martha ◽  
Valentin Ion ◽  
...  
Keyword(s):  
Acute Lymphoblastic Leukemia ◽  
Tooth Development ◽  
Lymphoblastic Leukemia ◽  
Treatment Method ◽  
Paediatric Oncology ◽  
Structural Defects ◽  
Dental Development ◽  
Cytostatic Agents ◽  
Dental Abnormalities ◽  
Tooth Buds

Chemotherapy, as a treatment method in paediatric oncology, coincides with the physiological process of tooth development. The interference between cytostatic agents and the cycle of the cells with specialised functions in the formation and mineralisation of dental structures leads to the appearance of abnormalities in the development of the tooth buds, structural defects and disorderly eruption. We have looked into the distribution of developmental tooth disorders in a group of children suffering from malignant ailments. The study reveals a high occurrence of microdontia and agenesis of premolars among children diagnosed with high-risk acute lymphoblastic leukemia at the age between 1 and 6, as well as tooth eruption disturbances in 70% of the children. The nature and the severity of dental abnormalities depend on the type of cytostatic medication, the dosage and the frequency of therapeutic cycles, the age of the child at the beginning of the oncological therapy, as well as on the stage of the odontogenesis.

The Influence of Isothermal Annealing and Structural Defects on Properties of Amorphous Fe78Si11B11 with High Magnetization Saturation

2017 ◽  
Vol 68 (3) ◽  
pp. 478-482 ◽  
Author(s):  
Katarzyna Bloch
Keyword(s):  
Numerical Analysis ◽  
Thermal Treatment ◽  
Saturation Magnetization ◽  
Isothermal Annealing ◽  
Diffusion Processes ◽  
Structural Defects ◽  
High Saturation Magnetization ◽  
Magnetization Curves ◽  
Magnetization Saturation ◽  
Very High

This paper presents the results of numerical analysis of the primary magnetization curves, which were obtained under the assumptions of the theory of approach to ferromagnetic saturation described in by H. Kronm�ller. Test samples of the Fe78Si11B11 alloy were tape-shaped materials, which were subjected to isothermal annealing, not causing their crystallization. The investigated ribbons (tapes) were characterized by a very high saturation magnetization value of approximately 2T, which the thermal treatment has increased by about 10%. It was found that reason for the change of saturation magnetization of the investigated samples was the local rearrangement of atoms due to diffusion processes leading to the release of free volumes to the surface and combining of them into larger unstable defects called pseudodislocational dipoles.

Prefiltration/Clarification via Dynamic Particle Separation

2015 ◽  
Vol 2 (0) ◽  
pp. 9781843396703-9781843396703
Author(s):  
S. R. Wright ◽  
S. Crouch ◽  
D. Wesson ◽  
S. Grady
Keyword(s):  
Particle Separation
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