Recombination kinetics in a silicon solar cell at low concentration: electro-analytical characterization of space-charge and quasi-neutral regions

2014 ◽  
Vol 16 (29) ◽  
pp. 15469-15476 ◽  
Author(s):  
Pankaj Yadav ◽  
Brijesh Tripathi ◽  
Kavita Pandey ◽  
Manoj Kumar
Keyword(s):  
Solar Cell ◽  
Space Charge ◽  
Space Charge Region ◽  
Silicon Solar Cell ◽  
Charge Recombination ◽  
Analytical Characterization ◽  
Low Concentration ◽  
Characteristic Features ◽  
Recombination Kinetics

We carried out electro-analytical measurements to demonstrate the characteristic features of charge recombination in the space-charge region and the quasi-neutral region.

scholarly journals Base Transceiver Station (BTS) Antenna Electric Field Influence on the Space Charge Region in a Silicon Solar Cell

2014 ◽  
Vol 7 (12) ◽  
pp. 2554-2558 ◽  
Author(s):  
Ali Moissi ◽  
Martial Zoungrana ◽  
Abdourrahmane Diallo ◽  
Senghane Mbodji ◽  
Hawa Ly Diallo ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Space Charge ◽  
Space Charge Region ◽  
Silicon Solar Cell ◽  
Base Transceiver Station ◽  
Field Influence

scholarly journals Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

2018 ◽  
Vol 63 (1) ◽  
pp. 38
Author(s):  
A. V. Kozinetz ◽  
V. A. Skryshevsky
Keyword(s):  
Solar Cell ◽  
Space Charge ◽  
Band Gap ◽  
Conversion Efficiency ◽  
Space Charge Region ◽  
Silicon Solar Cell ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Cell Conversion

The insertion of a thin amorphized layer (AL) in the space charge region of a silicon solar cell is proposed as a way to improve the conversion efficiency due to the impurity photovoltaic effect. Previously, this approach had been applied to a cell with a layer inserted in the emitter by the ion implantation. The insertion of such layer in the space charge region is founded to be preferable, because a better control over the recombination (via energy levels in the band gap and local states of interfaces) can be achieved. The parameters of a modified device are investigated by the numerical simulation, and it is concluded that the layer parameters have a crucial influence on the cell conversion efficiency. Based on our simulation results, the optimal AL and the height of barriers are determined. In such a case, the short circuit current density is improved due to the absorption of photons with energy less than a silicon band gap of 1.12 eV in AL, whereas the open circuit voltage and fill factor remain unchanged. Theoretically, the increase in the efficiency by 1–2% is achievable. In the non-optimal case, the degradation of a short circuit current and the fill factor eliminate the positive effect of an additional photogeneration in AL.

scholarly journals Silicon Solar Cell Space Charge Region and Capacitance Behavior under Electric Field

2021 ◽  
Vol 13 (01) ◽  
pp. 41-50
Author(s):  
Bernard Zouma ◽  
Fabé Idrissa Barro ◽  
Prince Abdoul Aziz Honadia
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Space Charge ◽  
Space Charge Region ◽  
Silicon Solar Cell

Crystal Characterization of Spherical Silicon Solar Cell by X-ray Diffraction

2006 ◽  
Vol 45 (5A) ◽  
pp. 3933-3937 ◽  
Author(s):  
Satoshi Omae ◽  
Takashi Minemoto ◽  
Mikio Murozono ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Characterization

Wet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage Measurements

2012 ◽  
Vol 195 ◽  
pp. 301-304 ◽  
Author(s):  
Heike Angermann ◽  
U. Stürzebecher ◽  
J. Kegel ◽  
C. Gottschalk ◽  
K. Wolke ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Energy Conversion Efficiency ◽  
Charge Carriers ◽  
Surface Charges ◽  
Surfaces And Interfaces ◽  
Wet Chemical ◽  
Substrate Surfaces ◽  
Non Destructive

For further enhancement of solar energy conversion efficiency the passivation of silicon (Si) substrate surfaces and interfaces of Si-based solar cell devices is a decisive precondition to reduce recombination losses of photogenerated charge carriers. These losses are mainly controlled by surface charges, the density and the character of rechargeable interface states (Dit) [], which are induced by defects localised in a small interlayer extending over only few Å. Therefore, the application of fast non-destructive methods for characterization of the electronic interface properties directly during the technological process has received an increasing interest in recent years.

Fabrication And Characterization Of A P-N Junction For Large Area Silicon Solar Cell

2018 ◽  
Author(s):  
Khorshed Alam ◽  
Tanisha Mehreen ◽  
Mohammad Khairul Basher ◽  
Mohammod Abu Sayid Haque ◽  
Subir C. Ghosh ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Large Area ◽  
Fabrication And Characterization
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