A synergic effect of sodium on the phase transition of tungsten-doped vanadium dioxide

2014 ◽  
Vol 16 (19) ◽  
pp. 8783-8786 ◽  
Author(s):  
Qiang Song ◽  
Weitao Gong ◽  
Guiling Ning ◽  
Hassan Mehdi ◽  
Guiqi Zhang ◽  
...  
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Vanadium Dioxide ◽  
Insulator Transition ◽  
Synergic Effect ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Temperature Reduction

A synergic effect of sodium on the metal–insulator transition temperature reduction of tungsten-doped vanadium dioxide is noted.

Orbital change manipulation metal–insulator transition temperature in W-doped VO2

2015 ◽  
Vol 17 (17) ◽  
pp. 11638-11646 ◽  
Author(s):  
Xinfeng He ◽  
Yijie Zeng ◽  
Xiaofeng Xu ◽  
Congcong Gu ◽  
Fei Chen ◽  
...  
Keyword(s):  
Phase Transition ◽  
Infrared Spectroscopy ◽  
Transition Temperature ◽  
Phase Transition Temperature ◽  
First Principles ◽  
Insulator Transition ◽  
First Principles Calculations ◽  
Orbital Structure ◽  
Metal Insulator Transition ◽  
Metal Insulator

Using ultraviolet-infrared spectroscopy and first principles calculations, it is revealed that changes in the orbital structure can regulate the W-doped VO2 phase transition temperature.

scholarly journals Spin injection into vanadium dioxide films from a typical ferromagnetic metal, across the metal–insulator transition of the vanadium dioxide films

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035120
Author(s):  
Kazuma Tamura ◽  
Teruo Kanki ◽  
Shun Shirai ◽  
Hidekazu Tanaka ◽  
Yoshio Teki ◽  
...  
Keyword(s):  
Vanadium Dioxide ◽  
Spin Injection ◽  
Ferromagnetic Metal ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Study of Microstructural, Electrical and Dielectric Properties of La0.9Pb0.1MnO3 and La0.8Y0.1Pb0.1MnO3 Ceramics

2019 ◽  
pp. 33-44 ◽  
Keyword(s):  
Transition Temperature ◽  
Frequency Dispersion ◽  
Insulator Transition ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Solid State Route ◽  
Distorted Structure ◽  
Lower Temperature

The present work studies the microstructural and electrical properties of La0.9Pb0.1MnO3 and La0.8Y0.1Pb0.1MnO3 ceramics synthesized by solid-state route method. Microstructure and elemental analysis of both samples were carried out by field emission scanning electron microscope (FESEM) and energy dispersive spectroscopy (EDS) method, respectively. Phase analysis by X-ray diffraction (XRD) indicated formation of single phase distorted structure. The XRD data were further analyzed by Rietveld refinement technique. Raman analysis reveals that Y atom substitutes La site into the LPMO with shifting of phonon modes. The temperature variation of resistivity of undoped and Y-doped La0.9Pb0.1MnO3 samples have been investigated. The electrical resistivity as a function of temperature showed that all samples undergo an metal-insulator (M-I) transition having a peak at transition temperature TMI. Y-doping increases the resistivity and the metal-insulator transition temperature (TMI) shifts to lower temperature. The temperature-dependent resistivity for temperatures less than metal-insulator transition is explained in terms the quadratic temperature dependence and for T > TMI, thermally activated conduction (TAC) is appropriate. Variation of frequency dispersion in permittivity and loss pattern due to La-site substitution in LPMO was observed in the dielectric response curve.

Electroresistance Effect due to Mo Substitution at Mn-Site in Monovalent Doped La0.85Ag0.15Mn1-xMoxO3 (x = 0.00 and 0.05) Manganites

2021 ◽  
Vol 317 ◽  
pp. 17-21
Author(s):  
Muhammad Syazwan Mohd Sabri ◽  
Nur Ain Athirah Che Apandi ◽  
Norazila Ibrahim
Keyword(s):  
Transition Temperature ◽  
Low Temperature ◽  
Temperature Region ◽  
Potential Application ◽  
Insulator Transition ◽  
Applied Current ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Magnetic Inhomogeneity ◽  
Spintronic Devices

The electroresistance, ER effect of La0.85Ag0.15Mn1-xMoxO3 (x = 0.00 and 0.05) samples prepared using solid method are investigated. The increased of applied current from 5 mA to 10 mA does not change the metal-insulator transition temperature, TMI for both samples however decreased the resistivity in the temperature region of 50 K – 300 K. Both samples exhibit large ER effect at low temperature region. At TMI, the ER value is 75.5% (x =0) and decrease to 34.15% (x = 0.05). However, at 300 K, the value of ER increases to 57 % for Mo substituted sample, and the value decreases to 6.4% for the x =0 sample. The enhanced ER effect at 300 K may be due to the growth of conductive filaments under increased applied current. The increase of applied current may perturb the arrangement of magnetic inhomogeneity induced by Mo substitution, result in reduction of resistivity and lead to the observation of ER effect. These findings suggest potential application of La0.85Ag0.15Mn1-xMoxO3 (x = 0.05) in spintronic devices.

Influence of Fe3O4 on metal–insulator transition temperature of La0.7Ca0.3MnO3 thin films

2019 ◽  
Vol 55 (1) ◽  
pp. 99-106
Author(s):  
Xiaofen Guan ◽  
Rongrong Ma ◽  
Guowei Zhou ◽  
Zhiyong Quan ◽  
G. A. Gehring ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Modelling the enthalpy change and transition temperature dependence of the metal–insulator transition in pure and doped vanadium dioxide

2020 ◽  
Vol 22 (24) ◽  
pp. 13474-13478
Author(s):  
Haichang Lu ◽  
Stewart Clark ◽  
Yuzheng Guo ◽  
John Robertson
Keyword(s):  
Transition Temperature ◽  
Temperature Dependence ◽  
Spin Density ◽  
Latent Heat ◽  
Vanadium Dioxide ◽  
Enthalpy Change ◽  
Formula Unit ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Enthalpy Difference

We show that a non-collinear spin density GGA+U functional calculation can describe the enthalpy difference (latent heat) of ΔE0 = −44.2 meV per formula unit, similar to the experimental value, between the paramagnetic rutile and the M1 phases of VO2.

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