In situ back-side illumination fluorescence XAFS (BI-FXAFS) studies on platinum nanoparticles deposited on a HOPG surface as a model fuel cell: a new approach to the Pt-HOPG electrode/electrolyte interface

2014 ◽  
Vol 16 (27) ◽  
pp. 13748-13754 ◽  
Author(s):  
Hiromitsu Uehara ◽  
Yohei Uemura ◽  
Takafumi Ogawa ◽  
Kentaro Kono ◽  
Ryoichi Ueno ◽  
...  
Keyword(s):  
Fine Structure ◽  
Fuel Cell ◽  
Back Side ◽  
New Approach ◽  
X Ray ◽  
Model Fuel ◽  
Fluorescence Xafs ◽  
X Ray Absorption ◽  
Side Illumination

We measured the in situ polarization-dependent X-ray absorption fine structure of PtNPs deposited on a flat HOPG substrate.

Kinetic analysis of Ag particle redispersion into ZSM-5 in the presence of coke using in situ XAFS

2021 ◽  
Author(s):  
Kazumasa Murata ◽  
Junya Ohyama ◽  
Atsushi Satsuma
Keyword(s):  
Fine Structure ◽  
Kinetic Analysis ◽  
X Ray ◽  
Xafs Spectroscopy ◽  
Absorption Fine ◽  
Ag Particles ◽  
In Situ Xafs ◽  
Ag Particle ◽  
X Ray Absorption

In the present study, the redispersion behavior of Ag particles on ZSM-5 in the presence of coke was observed using in situ X-ray absorption fine structure (XAFS) spectroscopy.

scholarly journals Backbonding contributions to small molecule chemisorption in a metal–organic framework with open copper(i) centers

2021 ◽  
Author(s):  
Gregory M. Su ◽  
Han Wang ◽  
Brandon R. Barnett ◽  
Jeffrey R. Long ◽  
David Prendergast ◽  
...  
Keyword(s):  
Fine Structure ◽  
Small Molecule ◽  
Metal Organic Framework ◽  
X Ray ◽  
Metal Site ◽  
Absorption Fine ◽  
Metal Organic ◽  
X Ray Absorption ◽  
Organic Framework

In situ near edge X-ray absorption fine structure spectroscopy directly probes unoccupied states associated with backbonding interactions between the open metal site in a metal–organic framework and various small molecule guests.

Electronic Structures of Crystalline and Aqueous Solutions of LiBr, NaBr, KBr, and KBrO3:  In Situ Br L-Edge Near-edge X-ray Absorption Fine Structure

2003 ◽  
Vol 107 (46) ◽  
pp. 12562-12565 ◽  
Author(s):  
Shuji Matsuo ◽  
Ponnusamy Nachimuthu ◽  
Dennis W. Lindle ◽  
Hisanobu Wakita ◽  
Rupert C. C. Perera
Keyword(s):  
Fine Structure ◽  
Aqueous Solutions ◽  
Electronic Structures ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption

Extended X-ray Absorption Fine Structure Studies of GaN Epilayers Doped in situ with Er and Eu During Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
V. Katchkanov ◽  
J. F. W. Mosselmans ◽  
S. Dalmasso ◽  
K. P. O'Donnell ◽  
R. W. Martin ◽  
...  
Keyword(s):  
Fine Structure ◽  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Local Structure ◽  
Molecular Beam ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption ◽  
The Eu

ABSTRACTThe local structure around Er and Eu atoms introduced into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure above the appropriate rare-earth X-ray absorption edge. The samples were doped in situ during growth by Molecular Beam Epitaxy. The formation of ErN clusters was found in samples with high average Er concentrations of 32±6% and 12.4±0.8%, estimated by Wavelength Dispersive X-ray analysis. When the average Er concentration is decreased to 6.0±0.2%, 1.6±0.2% and 0.17±0.02%, Er is found in localised clusters of ErGaN phase with high local Er content. Similar behaviour is observed for Eu-doped samples. For an average Eu concentration of 30.5±0.5% clusters of pure EuN occur. Decreasing the Eu concentration to 10.4±0.5% leads to EuGaN clusters with high local Eu content. However, for a sample with an Eu concentration of 14.2±0.5% clustering of Eu was not observed.

Fluorescence Extended X-Ray Absorption Fine Structure Study on Local Structures of Rare-Earth-Doped InGaGdN

2016 ◽  
Vol 1133 ◽  
pp. 429-433
Author(s):  
Siti Nooraya Mohd Tawil ◽  
Shuichi Emura ◽  
Daivasigamani Krishnamurthy ◽  
Hajime Asahi
Keyword(s):  
Fine Structure ◽  
Rare Earth ◽  
Nearest Neighbor ◽  
Structure Study ◽  
Edge Structure ◽  
X Ray ◽  
Local Structures ◽  
Absorption Fine ◽  
X Ray Absorption

Local structures around gadolinium atoms in rare-earth (RE)-doped InGaGdN thin films were studied by means of fluorescence extended X-ray absorption fine structure (EXAFS) measured at the Gd LIII-edges. The samples were doped with Gd in-situ during growth by plasma-assisted molecular beam epitaxy (PAMBE). Gd LIII-edge EXAFS signal from the GaGdN, GdN and Gd foil were also measured as reference. The X-ray absorption near edge structure (XANES) spectra around Gd LIII absorption edge of InGaGdN samples observed at room temperature indicated the enhancement of intensities with the increase of Gd composition. Further EXAFS analysis inferred that the Gd atoms in InGaN were surrounded by similar atomic shells as in the case of GaGdN with the evidence indicating majority of Gd atoms substituted into Ga sites of InGaGdN. A slight elongation of bond length for the 2nd nearest-neighbor (Gd–Ga) of sample with higher Gd concentration was also observed.

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