Constraints to the flat band potential of hematite photo-electrodes

2014 ◽  
Vol 16 (30) ◽  
pp. 16176-16186 ◽  
Author(s):  
A. Hankin ◽  
J. C. Alexander ◽  
G. H. Kelsall
Keyword(s):  
Aqueous Solutions ◽  
Flat Band ◽  
Flat Band Potential

Reasons are discussed for the widely disparate, reported flat band potentials for semiconducting hematite (photo-) electrodes in aqueous solutions.

Photoelectrochemical Characteristics of n-InSe Single Crystals

1995 ◽  
Vol 60 (12) ◽  
pp. 2039-2046
Author(s):  
Ioannis Poulios ◽  
Kostantinos Farmakis ◽  
Kostantinos Paraskevopoulos
Keyword(s):  
Aqueous Solutions ◽  
Single Crystals ◽  
Energy Gap ◽  
Flat Band ◽  
Flat Band Potential ◽  
Differential Capacity ◽  
Redox Systems ◽  
Donor Density ◽  
Presence And Absence

The photoelectrochemical behaviour of n-InSe single crystals in aqueous solutions has been studied in the presence and absence of several redox systems. Among them, Ce3+/4+ and KI/I2 yielded the highest photocurrents, photovoltages and show the highest stability. The semiconductor energy gap Eg = 1.2 eV, has been calculated from transmittance measurements. The flat band potential UFB = -0.40 V vs NHE and the donor density have been calculated from differential capacity measurements.

Flat band potential of as-grown n-MoSe2 single crystal electrodes

1988 ◽  
Vol 110 (1) ◽  
pp. 293-299 ◽  
Author(s):  
R. Srivastava ◽  
V. M. Pathak ◽  
V. V. Rao
Keyword(s):  
Single Crystal ◽  
Flat Band ◽  
Flat Band Potential

Fermi level pinning or semiconductor electrodes in aqueous and non aqueous electrolytes: influence of the modification of the electrode surface

1989 ◽  
Vol 67 (3) ◽  
pp. 382-388 ◽  
Author(s):  
O. Savadogo
Keyword(s):  
Fermi Level ◽  
Acidic Medium ◽  
Open Circuit ◽  
Flat Band ◽  
Flat Band Potential ◽  
Fermi Level Pinning ◽  
Material Surfaces ◽  
Electrolyte Interface ◽  
Semiconductor Electrodes ◽  
Minority Carriers

Modification of several semiconductors material surfaces with H4SiW12O40•nH2O have been carried out to produce an increase in the open circuit photopotential at the semiconductor/electrolyte interface (Voc) without changing the flat-band potential. The augmentation of Voc is shown to be attributed to a decrease of the minority carriers recombination at the semiconductor/electrolyte interface along with the suppression of Fermi level pinning. The enhancement of Voc and the electrocatalytic activity of the hydrogen evolution reaction in acidic medium of the derivatized electrodes is attributed to the Fermi level unpinning. Keywords: photoelectrodes, photoelectrocatalysis, pinning, modification improvement.

FeCoW multimetal oxide-coated W:BiVO4 photoanode for efficient oxygen evolution

2018 ◽  
Vol 2 (9) ◽  
pp. 2053-2059 ◽  
Author(s):  
Xiaorong Liang ◽  
Jiale Xie ◽  
Jinyun Xiong ◽  
Liangping Gong ◽  
Chang Ming Li
Keyword(s):  
Oxygen Evolution ◽  
Flat Band ◽  
Flat Band Potential ◽  
Negative Shift

A FeCoW multimetal oxide-coated W:BiVO4 photoanode performs a 3.8 times photocurrent and a negative shift of the flat-band potential by 280 mV in comparison to a W:BiVO4 photoanode.

Effect of electrolytes on flat-band potential of n-BaTiO3 semiconductor

1983 ◽  
Vol 28 (8) ◽  
pp. 1063-1066 ◽  
Author(s):  
Maheshwar Sharon ◽  
Ashwani Sinha
Keyword(s):  
Flat Band ◽  
Flat Band Potential

Decoupling pH Dependence of Flat Band Potential in Aqueous Dye-Sensitized Electrodes

2019 ◽  
Vol 123 (14) ◽  
pp. 8681-8687 ◽  
Author(s):  
Yongze Yu ◽  
Kevin A. Click ◽  
Szu-Chia Chien ◽  
Jiaonan Sun ◽  
Allison Curtze ◽  
...  
Keyword(s):  
Ph Dependence ◽  
Flat Band ◽  
Flat Band Potential ◽  
Dye Sensitized
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