Transition of crystallographic and electronic structures in In–Zn–Se alloys grown by molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (36) ◽  
pp. 8463-8470 ◽  
Author(s):  
Ling Lee ◽  
Liang-Kuei Huang ◽  
Chu-Shou Yang ◽  
Shang-Jui Chiu ◽  
Chia-Hsin Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electronic Structures ◽  
Molecular Beam ◽  
Vapour Phase ◽  
Vapour Phase Deposition

Owing to zinc vacancies induced during vapour-phase deposition and the stoichiometric and crystallographic evolutions in the In–Zn–Se alloy, five distinct phases and the corresponding electronic structures were demonstrated.

Photoluminescence of Eu-doped GaN

2011 ◽  
Vol 1342 ◽  
Author(s):  
K.P. O’Donnell
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Pressures ◽  
Vapour Phase ◽  
High Energy ◽  
Photoluminescence Excitation ◽  
Vapour Phase Epitaxy ◽  
The University

ABSTRACTThis talk reviews work on the optical properties of Eu-doped GaN at the Semiconductor Spectroscopy laboratory of the University of Strathclyde. The principal experimental technique used has been lamp-based Photoluminescence/Excitation (PL/E) spectroscopy on samples produced mainly by high-energy ion implantation and annealing, either at low or high pressures of nitrogen, as described by Lorenz et al. [1]. These have been supplemented by samples doped in-situ either by Molecular Beam Epitaxy or Metallorganic Vapour Phase Epitaxy. Magneto-optic experiments on GaN:Eu were carried out in collaboration with the University of Bath.

scholarly journals Separation of AlN layers from silicon substrates by KOH etching

2021 ◽  
Vol 2086 (1) ◽  
pp. 012037
Author(s):  
K Yu Shubina ◽  
D V Mokhov ◽  
T N Berezovskaya ◽  
E V Pirogov ◽  
A V Nashchekin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Damage ◽  
Vapour Phase ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Vapour Phase Epitaxy ◽  
Aln Buffer ◽  
Cr Film ◽  
Koh Etching

Abstract In this work, the AlN/Si(111) epitaxial structures grown consistently by plasma assisted molecular beam epitaxy (PA MBE) and hydride vapour phase epitaxy (HVPE) methods were studied. The PA MBE AlN buffer layers were synthesized via coalescence overgrowth of self-catalyzed AlN nanocolumns on Si(111) substrates and were used as templates for further HVPE growth of thick AlN layer. It was shown that described approaches can be used to obtain AlN layers with sufficiently smooth morphology. It was found that HVPE AlN inherited crystallographic polarity of the AlN layer grown by PA MBE. It was demonstrated that the etching of such AlN/Si(111) epitaxial structures results in partial separation of the AlN epilayers from the Si(111) substrate and allows to form suspended structures. Moreover, the avoidance of surface damage and backside overetching was achieved by use thin Cr film as surface protective coating and by increasing the layer thickness accordingly.

The Influence of Substrate Polarity on the Blue Emission from As-doped GaN Layers Grown by Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
S. V. Novikov ◽  
L. X. Zhao ◽  
C. T. Foxon ◽  
I. Harrison ◽  
R. P. Campion ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Blue Emission ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Sample Orientation ◽  
Metal Organic ◽  
Organic Vapour ◽  
Strong Blue Emission ◽  
Influence Of Substrate

ABSTRACTThe influence of sample orientation and polarity on the blue emission from As-doped GaN layers grown by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated. Arsenic doped GaN layers were grown under identical PA-MBE conditions on several types of substrates including c-plane (0001) sapphire and polar and non-polar GaN templates grown by metal-organic vapour phase epitaxy (MOVPE). Non-polar GaN MOVPE templates were grown on aplane (11–20) sapphire and LiAlO2 (100). The orientation and polarity have a strong influence on the morphology and the optical properties of As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of (000–1) oriented N-polarity layers.

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