The sodium ion-assisted memory behaviour of a silicon nanowire partial composite field-effect transistor

2014 ◽  
Vol 50 (31) ◽  
pp. 4112-4114
Author(s):  
Kyeong-Ju Moon ◽  
Tae Il Lee ◽  
Sang-Hoon Lee ◽  
Jae-Min Myoung
Keyword(s):  
Silicon Nanowires ◽  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Memory Device ◽  
Sodium Ion ◽  
Polymer Dielectric ◽  
Composite Field ◽  
Effect Transistor

A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na+ ions was used to create a field-effect transistor based memory device.

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

Poly-Silicon Nanowire FET Chemical Sensor

2010 ◽  
Author(s):  
Chih-ting Lin ◽  
Che-wei Huang ◽  
Jui-ching Wang
Keyword(s):  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Sensor ◽  
Silicon Nanowire ◽  
Standard Process ◽  
Dna Virus ◽  
Nano Technology ◽  
Effect Transistor ◽  
Cmos Compatible

Based on the improvements of the fabrication technologies, the dimension of the device has decreased to tens of nanometer. The nano-technology has become intriguing to integrate semiconductor technologies into bio-related applications. As the consequence, silicon nanowires (Si NWs) have been proposed to detect proteins, DNA, virus, and ions etc. However, few of previous studies consider the possibility to merge with CMOS standard process. In this work, we announced CMOS compatible technique which is used to develop polysilicon nanowire field effect transistor (poly-Si NW FET) as a chemical sensor to address this issue.

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate

ACS Sensors ◽  
2019 ◽  
Vol 4 (2) ◽  
pp. 427-433 ◽  
Author(s):  
Xi Chen ◽  
Si Chen ◽  
Qitao Hu ◽  
Shi-Li Zhang ◽  
Paul Solomon ◽  
...  
Keyword(s):  
Noise Reduction ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Schottky Junction ◽  
Effect Transistor ◽  
Device Noise

scholarly journals CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization

Materials ◽  
2018 ◽  
Vol 11 (5) ◽  
pp. 785 ◽  
Author(s):  
Duy Tran ◽  
Thuy Pham ◽  
Bernhard Wolfrum ◽  
Andreas Offenhäusser ◽  
Benjamin Thierry
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Technology Development ◽  
Silicon Nanowire ◽  
Biosensor Technology ◽  
Effect Transistor ◽  
Cmos Compatible

scholarly journals Numerical simulation of different silicon nanowire field-effect transistor channel lengths for biosensing application

2018 ◽  
Author(s):  
M. F. M. Fathil ◽  
M. H. M. Ghazali ◽  
M. K. Md Arshad ◽  
M. Nuzaihan M. N. ◽  
Sh. Nadzirah ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Transistor Channel ◽  
Effect Transistor ◽  
Channel Lengths

scholarly journals Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

10.3791/53660 ◽  
2016 ◽  
Author(s):  
Jennifer Yun-Shin Wu ◽  
Chih-Heng Lin ◽  
Mei-Huei Feng ◽  
Chien-Hung Chen ◽  
Ping-Chia Su ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Effect Transistor
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