Coumarin 545: an emission reference dye with a record-low temperature coefficient for ratiometric fluorescence based temperature measurements

The Analyst ◽  
2015 ◽  
Vol 140 (4) ◽  
pp. 1008-1013 ◽  
Author(s):  
Deqi Mao ◽  
Xiaogang Liu ◽  
Qinglong Qiao ◽  
Wenting Yin ◽  
Miao Zhao ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Temperature Measurements ◽  
Ratiometric Fluorescence

The emission intensities of coumarin 545 solution exhibit a low temperature dependence, with a record-low temperature coefficient of only ∼0.025% per °C.

Low-Temperature Measurements on Germanium-on-Insulator pMOSFETs: Evaluation of the Background Doping Level and Modeling of the Threshold Voltage Temperature Dependence

2019 ◽  
Vol 19 (4) ◽  
pp. 145-152 ◽  
Author(s):  
William Van Den Daele ◽  
Emmanuel Augendre ◽  
Krunoslav Romanjek ◽  
Cyrille Le Royer ◽  
Laurent Clavelier ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Threshold Voltage ◽  
Doping Level ◽  
Temperature Measurements ◽  
Background Doping

EVANOHM

Alloy Digest ◽  
1960 ◽  
Vol 9 (4) ◽  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Temperature Coefficient ◽  
Base Alloy ◽  
Nickel Base Alloy ◽  
Temperature Coefficient Of Resistance ◽  
High Electrical Resistivity ◽  
Nickel Base

Abstract EVANOHM is a nickel-base alloy having low temperature coefficient of resistance and high electrical resistivity. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on joining. Filing Code: Ni-57. Producer or source: Wilbur B. Driver Company.

ISO-ELASTIC

Alloy Digest ◽  
1957 ◽  
Vol 6 (8) ◽  
Keyword(s):  
Corrosion Resistance ◽  
Low Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Temperature Coefficient ◽  
Nickel Alloy ◽  
Modulus Of Elasticity ◽  
Heat Treating ◽  
Precision Instrument ◽  
Iron Nickel

Abstract ISO-ELASTIC is an iron-nickel alloy having low temperature coefficient of the modulus of elasticity. It is suitable for precision instrument springs. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion resistance as well as forming, heat treating, and machining. Filing Code: Fe-14. Producer or source: John Chatillon & Sons.

Silicon Fringe Sample Metrology—A Thickness Measurement Technique

2013 ◽  
Author(s):  
Mark Kimball
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Measurement Technique ◽  
Thickness Measurement ◽  
Sample Thickness ◽  
Index Of Refraction ◽  
Interference Fringes ◽  
Noncontact Method ◽  
Thickness Variations

Abstract Silicon’s index of refraction has a strong temperature coefficient. This temperature dependence can be used to aid sample thinning procedures used for backside analysis, by providing a noncontact method of measuring absolute sample thickness. It also can remove slope ambiguity while counting interference fringes (used to determine the direction and magnitude of thickness variations across a sample).

The Effect of Concentrated Light Intensity on Temperature Coefficient of the InGaP/InGaAs/Ge Triple-Junction Solar Cell

2015 ◽  
Vol 8 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Wei Zhao ◽  
Zhigang Zhou ◽  
Mengxun Chen
Keyword(s):  
Solar Cell ◽  
Light Intensity ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Triple Junction ◽  
Concentration Ratio ◽  
Crystalline Silicon ◽  
Photovoltaic System ◽  
Solar Pv ◽  
Junction Solar Cell

Research on automatic tracking solar concentrator photovoltaic systems has gained increasing attention in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by the heat pipe. A detailed analysis on the temperature coefficient influence factors of triple-junction solar cell under different high concentrations (75X, 100X, 125X, 150X, 175X and 200X) has been conducted based on the dish-style concentration photovoltaic system. The results show that under high concentrated light intensity, the temperature coefficient of Voc of triple-junction solar cell is increasing as the concentration ratio increases, from -10.84 mV/°C @ 75X growth to -4.73mV/°C @ 200X. At low concentration, the temperature coefficient of Voc increases rapidly, and then increases slowly as the concentration ratio increases. The temperature dependence of η increased from -0.346%/°C @ 75X growth to - 0.103%/°C @ 200X and the temperature dependence of Pmm and FF increased from -0.125 W/°C, -0.35%/°C @ 75X growth to -0.048W/°C, -0.076%/°C @ 200X respectively. It indicated that the temperature coefficient of three-junction GaInP/GalnAs/Ge solar cell is better than that of crystalline silicon cell array under concentrating light intensity.

The Microscopic Structure Of Shallow Donors In Silicon Carbide

1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Double Resonance ◽  
Epr Spectra ◽  
Electron Nuclear Double Resonance ◽  
Paramagnetic Resonance ◽  
Vacancy Pair ◽  
Temperature Spectra ◽  
Electron Paramagnetic

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.

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