An amorphous silicon photodiode microfluidic chip to detect nanomolar quantities of HIV-1 virion infectivity factor

The Analyst ◽  
2014 ◽  
Vol 139 (15) ◽  
pp. 3709-3713 ◽  
Author(s):  
Cláudia R. Vistas ◽  
Sandra S. Soares ◽  
Rogério M. M. Rodrigues ◽  
Virginia Chu ◽  
João P. Conde ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Microfluidic Chip ◽  
Hydrogenated Amorphous Silicon ◽  
Microfluidic Channel ◽  
Silicon Photodiode ◽  
Virion Infectivity Factor ◽  
Single Fragment ◽  
Hydrogenated Amorphous ◽  
Hiv 1

A hydrogenated amorphous silicon photosensor is coupled to a microfluidic channel functionalized with recombinant single fragment antibodies to detect nanomolar quantities of HIV-1 virion infective factor.

On-chip Detection of Chemiluminescent Biomolecules Using an Integrated Thin Film Silicon Photodiode

2007 ◽  
Vol 1004 ◽  
Author(s):  
A. Pereira ◽  
A. Pimentel ◽  
V. Chu ◽  
D. M. F. Prazeres ◽  
J. P. Conde
Keyword(s):  
Horseradish Peroxidase ◽  
Amorphous Silicon ◽  
Light Emission ◽  
Limit Of Detection ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Photodiode ◽  
Zero Bias ◽  
On Chip ◽  
Hydrogenated Amorphous ◽  
Catalyzed Oxidation

AbstractA hydrogenated amorphous silicon photodetector on a glass substrate is used for the integrated, real-time detection of chemiluminescent reactions in solution. The light emission at 425 nm resulting from the horseradish peroxidase-catalyzed oxidation of luminol is detected by a p-i-n amorphous silicon photodiode operated at zero bias. The limit of detection of the present device is in the range of nanomole of horseradish peroxidase per liter.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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