High performance nonvolatile transistor memories of pentacene using the electrets of star-branched p-type polymers and their donor–acceptor blends

2014 ◽  
Vol 2 (8) ◽  
pp. 1436 ◽  
Author(s):  
Yu-Cheng Chiu ◽  
Tzu-Ying Chen ◽  
Chu-Chen Chueh ◽  
Hung-Yu Chang ◽  
Kenji Sugiyama ◽  
...  
Keyword(s):  
High Performance ◽  
Donor Acceptor ◽  
P Type

Polarity switching from p- to n-type in a single thermoelectric donor-acceptor copolymer by p-type doping

2021 ◽  
Author(s):  
Jing Wang ◽  
Yizhuo Wang ◽  
Qing Li ◽  
Zhanchao Li ◽  
Liqing Xu ◽  
...  
Keyword(s):  
Conducting Polymer ◽  
High Performance ◽  
High Current Density ◽  
Organic Polymer ◽  
Novel Approach ◽  
Polarity Switching ◽  
Electrical Conductivities ◽  
Planar Film ◽  
Donor Acceptor ◽  
P Type

Abstract The transport mechanism of organic materials is still far away from being well understood and controlled although conducting polymers have been discovered since 1977. It is rare to see conducting polyers possessing high bipolar (p- and n-type) electrical conductivities within a single bulk doped organic polymer without the assistant of gate voltage. Here, we report a novel approach to provide high performance n-type materials by p-type doping. More importantly, the bipolar electrical conductivities of the donor-acceptor conducting polymer are high, resulting high bipolar power factors among the solution-processable ambipolar D-A copolymers. A fully organic p-n junction is created in a planar film, exhibiting a high rectification ratio of 2 x 102 at +5 V with a high current density of 3 A/cm2. Structural and spectroscopic tests have been performed to provide a fundamental understanding of the polarity switching mechanism. The results open the opportunity of making p- and n-type modules with a single conducting polymer for future modern organic electronics.

scholarly journals Effects of the Electron-Deficient Third Components in n-Type Terpolymers on Morphology and Performance of All-Polymer Solar Cells

2020 ◽  
Vol 02 (03) ◽  
pp. 214-222
Author(s):  
Bin Liu ◽  
Huiliang Sun ◽  
Chang Woo Koh ◽  
Mengyao Su ◽  
Bao Tu ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Noncovalent Interactions ◽  
Polymer Solar Cells ◽  
Energy Levels ◽  
Building Blocks ◽  
The Third ◽  
Donor Acceptor ◽  
And Performance ◽  
P Type

Compared with p-type terpolymers, less effort has been devoted to n-type analogs. Herein, we synthesized a series of n-type terpolymers via incorporating three electron-deficient third components including thienopyrroledione (TPD), phthalimide, and benzothiadiazole into an imide-functionalized parent n-type copolymer to tune optoelectronic properties without sacrificing the n-type characteristics. Due to effects of the third components with different electron-accepting ability and solubility, the resulting three polymers feature distinct energy levels and crystallinity. In addition, heteroatoms (S, O, and N) attached on the third components trigger intramolecular noncovalent interactions, which can increase molecule planarity and have a significant effect on the packing structures of the polymer films. As a result, the best power conversion efficiency of 8.28% was achieved from all-polymer solar cells (all-PSCs) based on n-type terpolymer containing TPD. This is contributed by promoted electron mobility and face-on polymer packing, showing the pronounced advantages of the TPD used as a third component for thriving efficient n-type terpolymers. The generality is also successfully validated in a benchmark polymer donor/acceptor system by introducing TPD into the benchmark n-type polymer N2200. The results demonstrate the feasibility of introducing suitable electron-deficient building blocks as the third components for high-performance n-type terpolymers toward efficient all-PSCs.

Phototransistors Based on A Lightly Doped P3HT

MRS Advances ◽  
2020 ◽  
Vol 5 (37-38) ◽  
pp. 1975-1982
Author(s):  
Thomas H. Debesay ◽  
Sam-Shajing Sun
Keyword(s):  
High Performance ◽  
Low Cost ◽  
Acid Methyl Ester ◽  
Extensive Study ◽  
The Past ◽  
Polymeric Semiconductor ◽  
Donor Acceptor ◽  
Low Toxicity ◽  
Improved Performance ◽  
P Type

AbstractOrganic/Polymeric Semiconductor (OSC) based devices have been under extensive study for the past three decades due to their intrinsic potential advantages such as lightweight, mechanical flexibility, biocompatibility, low toxicity, abundant material availability, low cost of processing, etc. A phototransistor incorporates the properties and functions of a transistor and photodetector. In this study, a phototransistor based on a donor/acceptor (D/A) pair (photo-doping) was studied and demonstrated. Unlike in organic photovoltaics (OPV) where 1:1 proportion by mass of the donor:acceptor is utilized to make up the active layer, that ratio appears to be too high for phototransistor applications. According to literature, this 1:1 concentration leads to low overall device performance, lack of I-V curve saturation (kink effect), and bipolar behavior. By altering fabrication techniques and doping concentrations, we were able to demonstrate a donor/acceptor based phototransistor with p-type characteristics with improved performance. In this work, we fabricated a high-performance OFET based on a very small amount of Phenyl-C71-butyric acid methyl ester (PCBM) doped into a Poly(3-hexylthiophene) (P3HT) host. With this work, a greater understanding behind the optimization of D/A based phototransistors is advanced.

High performance 0.25 [micro sign]m p-type Ge/SiGe MODFETs

1998 ◽  
Vol 34 (19) ◽  
pp. 1888 ◽  
Author(s):  
G. Höck ◽  
T. Hackbarth ◽  
U. Erben ◽  
E. Kohn ◽  
U. König
Keyword(s):  
High Performance ◽  
P Type

P-type Co3O4 nanoarrays decorated on the surface of n-type flower-like WO3 nanosheets for high-performance gas sensing

2019 ◽  
Vol 288 ◽  
pp. 104-112 ◽  
Author(s):  
Yanghai Gui ◽  
Lele Yang ◽  
Kuan Tian ◽  
Hongzhong Zhang ◽  
Shaoming Fang
Keyword(s):  
High Performance ◽  
Gas Sensing ◽  
P Type ◽  
Co3o4 Nanoarrays

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals Nonvolatile Ternary Resistive Memory Performance of a Benzothiadiazole-Based Donor–Acceptor Material on ITO-Coated Glass

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 318
Author(s):  
Yang Li ◽  
Cheng Zhang ◽  
Zhiming Shi ◽  
Jingni Li ◽  
Qingyun Qian ◽  
...  
Keyword(s):  
Data Storage ◽  
High Performance ◽  
Memory Performance ◽  
Resistive Memory ◽  
Molecular Systems ◽  
Threshold Voltages ◽  
Donor Acceptor ◽  
Low Threshold ◽  
Multilevel Memory ◽  
Further Development

The explosive growth of data and information has increasingly motivated scientific and technological endeavors toward ultra-high-density data storage (UHDDS) applications. Herein, a donor−acceptor (D–A) type small conjugated molecule containing benzothiadiazole (BT) is prepared (NIBTCN), which demonstrates multilevel resistive memory behavior and holds considerable promise for implementing the target of UHDDS. The as-prepared device presents distinct current ratios of 105.2/103.2/1, low threshold voltages of −1.90 V and −3.85 V, and satisfactory reproducibility beyond 60%, which suggests reliable device performance. This work represents a favorable step toward further development of highly-efficient D−A molecular systems, which opens more opportunities for achieving high performance multilevel memory materials and devices.

An expanded isoindigo unit as a new building block for a conjugated polymer leading to high-performance solar cells

2014 ◽  
Vol 2 (15) ◽  
pp. 5427-5433 ◽  
Author(s):  
Shugang Li ◽  
Zhongcheng Yuan ◽  
Jianyu Yuan ◽  
Ping Deng ◽  
Qing Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Building Block ◽  
Conjugated Polymer ◽  
High Performance ◽  
Fill Factor ◽  
Solar Cell Device ◽  
Donor Acceptor ◽  
First Time

An expanded isoindigo unit (IBTI) has been incorporated into a donor–acceptor conjugated polymer for the first time. The PCE of the solar cell device based on the new polymer reached 6.41% with a fill factor of 0.71.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

scholarly journals Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Micromachines ◽  
2018 ◽  
Vol 9 (8) ◽  
pp. 412 ◽  
Author(s):  
Evans Bernardin ◽  
Christopher Frewin ◽  
Richard Everly ◽  
Jawad Ul Hassan ◽  
Stephen Saddow
Keyword(s):  
Silicon Carbide ◽  
High Performance ◽  
Electrical Characterization ◽  
Electrode Impedance ◽  
Voltage Range ◽  
Promising Solution ◽  
Multiple Materials ◽  
Diode Behavior ◽  
Materials Used ◽  
P Type

Intracortical neural interfaces (INI) have made impressive progress in recent years but still display questionable long-term reliability. Here, we report on the development and characterization of highly resilient monolithic silicon carbide (SiC) neural devices. SiC is a physically robust, biocompatible, and chemically inert semiconductor. The device support was micromachined from p-type SiC with conductors created from n-type SiC, simultaneously providing electrical isolation through the resulting p-n junction. Electrodes possessed geometric surface area (GSA) varying from 496 to 500 K μm2. Electrical characterization showed high-performance p-n diode behavior, with typical turn-on voltages of ~2.3 V and reverse bias leakage below 1 nArms. Current leakage between adjacent electrodes was ~7.5 nArms over a voltage range of −50 V to 50 V. The devices interacted electrochemically with a purely capacitive relationship at frequencies less than 10 kHz. Electrode impedance ranged from 675 ± 130 kΩ (GSA = 496 µm2) to 46.5 ± 4.80 kΩ (GSA = 500 K µm2). Since the all-SiC devices rely on the integration of only robust and highly compatible SiC material, they offer a promising solution to probe delamination and biological rejection associated with the use of multiple materials used in many current INI devices.

Sign in / Sign up

Export Citation Format

Share Document