A facile low-temperature growth of large-scale uniform two-end-open Ge nanotubes with hierarchical branches

2013 ◽  
Vol 1 (35) ◽  
pp. 5471 ◽  
Author(s):  
Xiangdong Li ◽  
Guowen Meng ◽  
An-Ping Li ◽  
Zhaoqin Chu ◽  
Xiaoguang Zhu ◽  
...  
2007 ◽  
Vol 22 (7) ◽  
pp. 2032-2036 ◽  
Author(s):  
Dong Chan Kim ◽  
Bo Hyun Kong ◽  
Sung-Yun Jeon ◽  
Ji-Beom Yoo ◽  
Hyung Koun Cho ◽  
...  

By injecting additional argon gas, we were able to grow one-dimensional ZnO nanorod arrays with a uniform distribution on a large scale at a low temperature of less than 330 °C by metalorganic chemical vapor deposition. All of the nanorods grown on the sapphire substrate had a 30° in-plane rotation with respect to the substrate and showed the epitaxial characteristics of [10¯10]ZnO//[11¯20]sapphire, despite the low-temperature growth. These ZnO nanorods with high crystalline quality exhibited a high enhancement factor and low turn-on field value, thus having good potential to be used as a field emitter.


2019 ◽  
Vol 28 (5) ◽  
pp. 056107 ◽  
Author(s):  
Hui Guo ◽  
Hui Chen ◽  
Yande Que ◽  
Qi Zheng ◽  
Yu-Yang Zhang ◽  
...  

2002 ◽  
Vol 751 ◽  
Author(s):  
Atsuyuki Fukano ◽  
Hiroyuki Oyanagi

AbstractThe low-temperature growth of thin SiO2 layers for gate insulators in very large-scale integrated (VLSI) circuits is becoming an urgent topic of silicon technology. In contrast, to conventional thermal oxidization processes (T>900°C), ultraviolet (UV) photo-oxidation of silicon technology is a promising approach for low-temperature growth of silicon dioxide thin films. We have grown silicon dioxide thin films at low temperature (T<500 °C) using an excimer lamp with various wavelengths and evaluated the quality of thin SiO2 layers as well as the SiO2–Si interface. We found that the SiO2 layers (t<5 nm) grown by UV photo-oxidation show significant differences in physical properties, such as density profile, from those of thermal oxidization, i.e., the higher average density 2.23 g/cm3 and more constant distribution, making the SiO2–Si interface region, so-called “transition layer” less eminent. Superior characteristics of ultra-thin SiO2 layer grown by UV photo-oxidation are demonstrated.


2021 ◽  
Vol 26 ◽  
pp. 102050
Author(s):  
Mehdi Dehghani ◽  
Ershad Parvazian ◽  
Nastaran Alamgir Tehrani ◽  
Nima Taghavinia ◽  
Mahmoud Samadpour

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  

2021 ◽  
Vol 3 (3) ◽  
pp. 1244-1251
Author(s):  
Hyunjin Joh ◽  
Gopinathan Anoop ◽  
Won-June Lee ◽  
Dipjyoti Das ◽  
Jun Young Lee ◽  
...  

1983 ◽  
Vol 61 (7) ◽  
pp. 1935-1940 ◽  
Author(s):  
C. J. Andrews ◽  
Y. C. Paliwal

Cold hardness and ice encasement tolerance of 'Fredrick' and 'Norstar' winter wheats as affected by infection with barley yellow dwarf virus (BYDV) were determined during inoculation, disease development periods, and low-temperature growth. Plants were either prehardened to cold, or warm grown before infection; two disease development periods (DDP) were utilized. A long DDP induced greater pathogenesis and greater hardiness reduction than a short DDP. The effect of virus infection on the final level of hardiness of prehardened plants was generally greater than on that of nonprehardened plants. Viral infection reduced hardiness up to 3.5 °C in 'Fredrick' wheat, but reductions of 6–10 °C below hardiness potential were recorded after certain environmental regimes allowing disease development. Ice tolerance was reduced by BYDV infection in early low-temperature growth but was increased by infection after 4 months at low temperature. This increase in survival was associated with higher dry matter content in infected than in noninfected plants.


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