A UV-ozone treated amorphous barium–strontium titanate dielectric thin film for low driving voltage flexible organic transistors

2013 ◽  
Vol 1 (24) ◽  
pp. 3825 ◽  
Author(s):  
Zongrong Wang ◽  
Xiaochen Ren ◽  
Chi Wah Leung ◽  
Sanqiang Shi ◽  
Paddy Kwok Leung Chan
Keyword(s):  
Thin Film ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Organic Transistors ◽  
Driving Voltage ◽  
Dielectric Thin Film ◽  
Barium Strontium ◽  
Uv Ozone

Preparation of Barium Strontium Titanate Thin Film by Spray Deposition

2002 ◽  
Vol 45 (1) ◽  
pp. 3-12
Author(s):  
Y. Takeshima ◽  
K. Nishita ◽  
K. Tanaka ◽  
Y. Sakabe
Keyword(s):  
Thin Film ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Spray Deposition ◽  
Barium Strontium ◽  
Titanate Thin Film

scholarly journals KARAKTERISASI KAPASITOR BARIUM STRONTIUM TITANAT (BST) Ba0,75 Sr0,25 TiO3 , YANG DIBUAT MENGGUNAKAN METODE SOL-GEL

2019 ◽  
Vol 16 (1) ◽  
pp. 65
Author(s):  
Rahmi Dewi ◽  
Tiara Pertiwi ◽  
Krisman Krisman
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Dielectric Constant ◽  
Impedance Spectroscopy ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sol Gel ◽  
Barium Strontium ◽  
Scanning Electron

The thin film of Barium Strontium Titanate (BST) has been studied withcomposition ofby using sol-gel method that annealed in temperature of 600oC and 650oC. The thin film of BST is characterized by using Field Emission Scanning Electron Microscopy (FESEM) and an impedance spectroscopy. The results of  FESEM characterization for samples in temperature of 600oC and 650oC are 55.83 nm and 84.88 nm in thickness respectively. The result of impedance spectroscopy characterization given frequency values obtained by the impedance value of real and imaginary.The capacitance value at a frequency of 20 Hz from a thin film of BST in temperature of 600oC and 650oC are 69.36Fand138.70F. The dielectric constant of the thin film of BST in temperature of 600oC and 650oC are 22.17 dan 131.56 respectively.

Preparation of barium strontium titanate thin film capacitors on silicon by metallorganic decomposition

1994 ◽  
Vol 76 (4) ◽  
pp. 2541-2543 ◽  
Author(s):  
Antonio B. Catalan ◽  
Joseph V. Mantese ◽  
Adolph L. Micheli ◽  
Norman W. Schubring ◽  
Roger J. Poisson
Keyword(s):  
Thin Film ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Barium Strontium ◽  
Thin Film Capacitors ◽  
Titanate Thin Film

Microstructure Analysis of Barium Strontium Titanate Thin Film

1998 ◽  
Vol 523 ◽  
Author(s):  
Wei Chen ◽  
Joe Hooker ◽  
Kathy Monarch ◽  
Peter Fejes ◽  
Peir Chu
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Sample Preparation ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Accurate Method ◽  
Tem Analysis ◽  
Barium Strontium

AbstractMicrostructures of Barium Strontium Titanate (Ba, Sr)TiO3 [BST] thin film play an important role in determining the electrical properties of BST. In particular, it is found that the grain size distribution as a function of deposition conditions correlates with the dielectric constant of BST film. Traditionally, Transmission Electron Microscopy (TEM) provides an accurate method for determining microstructures such as interface structure between BST and electrodes and BST grain size distribution. However, TEM analysis relies heavily upon successful sample preparation, and film adhesion for BST proves to be a difficult problem to overcome for successful sample preparation. With the state of the art Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM), useful information can be obtained for BST and electrode microstructures requiring little or no sample preparation. A good correlation among TEM, SEM and AFM techniques is achieved which allows useful information of BST grain size distribution to he obtained via SEM and AFM analyses. Power spectral density (PSD) analysis of contrast enhanced AFM images proves to be an efficient method for estimating BST grain size distribution.

Dielectric dispersion in Barium Strontium Titanate thin film capacitors with iridium electrodes

1998 ◽  
Vol 21 (1-4) ◽  
pp. 155-166 ◽  
Author(s):  
Venkatasubramani Balu ◽  
Tung-Sheng Chen ◽  
Shylaja Katakam ◽  
Jian-Hung Lee ◽  
Bruce White ◽  
...  
Keyword(s):  
Thin Film ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Dielectric Dispersion ◽  
Barium Strontium ◽  
Thin Film Capacitors ◽  
Titanate Thin Film

scholarly journals THE DETERMINATION OF BARIUM STRONTIUM TITANATE THIN FILM BAND GAP ENERGY Ba0,15Sr0,85TiO3 USING ULTRAVIOLET-VISIBLE SPECTROSCOPY

2020 ◽  
Vol 5 (1) ◽  
pp. 11-20
Author(s):  
Rahmi Dewi ◽  
Krisman Krisman ◽  
Zulkarnaen Zulkarnaen ◽  
Rahmi Afrida Syahraini ◽  
TS Luqman Husein
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Barium Strontium ◽  
Vis Spectroscopy ◽  
Bst Thin Film

A thin layer of Barium Strontium Titanate Ba0.15Sr0.85TiO3 (BST) was developed on a glass substrate using a sol-gel method with annealing temperatures and spin coating process at 3500 rpm for 30 seconds. The annealing temperature varied from 600oC, 650oC, and 700oC.  Characterization of optical properties was developed using UV-Vis spectroscopy to determine the energy bandgap. The values of the BST thin layer energy band at the annealing temperature were 3.55 eV, 3.32 eV, and 3.10 eV, respectively. The results indicate that the BST thin film was a semiconductor material.

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