Structural dependence of the optical properties of narrow bandgap semiconductors with orthogonal donor–acceptor geometries

2013 ◽  
Vol 4 (4) ◽  
pp. 1807 ◽  
Author(s):  
Bruno Grimm ◽  
Chad Risko ◽  
Jason D. Azoulay ◽  
Jean-Luc Brédas ◽  
Guillermo C. Bazan
Keyword(s):  
Optical Properties ◽  
Structural Dependence ◽  
Narrow Bandgap ◽  
Donor Acceptor ◽  
Bandgap Semiconductors

scholarly journals Broadband infrared photodetection using a narrow bandgap conjugated polymer

2021 ◽  
Vol 7 (24) ◽  
pp. eabg2418
Author(s):  
Jarrett H. Vella ◽  
Lifeng Huang ◽  
Naresh Eedugurala ◽  
Kevin S. Mayer ◽  
Tse Nga Ng ◽  
...  
Keyword(s):  
Conjugated Polymer ◽  
High Performance ◽  
Low Cost ◽  
Modern Science ◽  
Long Wavelength ◽  
Narrow Bandgap ◽  
Wavelength Absorption ◽  
Donor Acceptor ◽  
Infrared Photodetection ◽  
Bandgap Semiconductors

Photodetection spanning the short-, mid-, and long-wave infrared (SWIR-LWIR) underpins modern science and technology. Devices using state-of-the-art narrow bandgap semiconductors require complex manufacturing, high costs, and cooling requirements that remain prohibitive for many applications. We report high-performance infrared photodetection from a donor-acceptor conjugated polymer with broadband SWIR-LWIR operation. Electronic correlations within the π-conjugated backbone promote a high-spin ground state, narrow bandgap, long-wavelength absorption, and intrinsic electrical conductivity. These previously unobserved attributes enabled the fabrication of a thin-film photoconductive detector from solution, which demonstrates specific detectivities greater than 2.10 × 109 Jones. These room temperature detectivities closely approach those of cooled epitaxial devices. This work provides a fundamentally new platform for broadly applicable, low-cost, ambient temperature infrared optoelectronics.

ChemInform Abstract: Quadratic Non-Linear Optical Properties of Some Donor-Acceptor Substituted Thiophenes (I)-(VI).

ChemInform ◽  
2010 ◽  
Vol 26 (25) ◽  
pp. no-no
Author(s):  
M. G. HUTCHINGS ◽  
I. FERGUSON ◽  
D. J. MCGEEIN ◽  
J. O. MORLEY ◽  
J. ZYSS ◽  
...  
Keyword(s):  
Optical Properties ◽  
Non Linear ◽  
Donor Acceptor ◽  
Linear Optical Properties ◽  
Linear Optical

Third-Order Nonlinear Optical Properties of Donor−Acceptor Organometallic Compounds in Films and Solution

1999 ◽  
Vol 103 (50) ◽  
pp. 11016-11020 ◽  
Author(s):  
Gema Rojo ◽  
Fernando Agulló-López ◽  
José A. Campo ◽  
José V. Heras ◽  
Mercedes Cano
Keyword(s):  
Optical Properties ◽  
Nonlinear Optical ◽  
Organometallic Compounds ◽  
Nonlinear Optical Properties ◽  
Third Order ◽  
Donor Acceptor

scholarly journals Nonlinear Optical Properties Tuning in Meso-Tetraphenylporphyrin Derivatives Substituted with Donor/Acceptor Groups in Picosecond and Nanosecond Regimes

Molecules ◽  
2015 ◽  
Vol 20 (4) ◽  
pp. 5554-5565 ◽  
Author(s):  
Guanghong Ao ◽  
Zhengguo Xiao ◽  
Xuemin Qian ◽  
Zhongguo Li ◽  
Yuxiao Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Nonlinear Optical ◽  
Nonlinear Optical Properties ◽  
Donor Acceptor

The effect of substitutional doping of Yb2+ on structural, electronic, and optical properties of CsCaX3 (X: Cl, Br, I) phosphors: A first-principles study

2021 ◽  
Author(s):  
Rashid Khan ◽  
Kaleem Ur Rahman ◽  
Qingmin Zhang ◽  
Altaf Ur Rahman ◽  
Sikander Azam ◽  
...  
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Dielectric Susceptibility ◽  
Hybrid Functional ◽  
Generalized Gradient ◽  
Electronic Band ◽  
Electronic And Optical Properties ◽  
Substitutional Doping ◽  
Bandgap Semiconductors ◽  
Magnetic Insulator

Abstract Using first-principles calculations, the effects of Yb$^{2+}$ substitutional doping on structural, electronic, and optical properties of a series of perovskite compounds CsCaX$_3$ (X: Cl, Br, I), have been investigated. We employed generalized gradient approximation (GGA) and HSE hybrid functional to study the electronic and optical properties. A series of pristine CsCaX$_3$(X: Cl, Br, I) is characterized as a non-magnetic insulator with indirect bandgap perovskite materials. These phosphor materials are suitable candidates for doping with lanthanide series elements to tune their electronic bandgaps according to our requirements because of their wide bandgaps. The calculated electronic bandgaps of CsCaX$_3$ (X: Cl, Br, I) are 3.7 eV(GGA) and 4.5 eV (HSE) for CsCaI$_3$, 4.5 eV (GGA) and 5.3 eV (HSE) for CsCaBr$_3$, and 5.4 eV (GGA) and 6.4 eV (HSE) for CsCaCl$_3$. According to formation energies, the Yb$^{2+}$ doped at the Ca-site is thermodynamically more stable as compared to all possible atomic sites. The electronic band structures show that the Yb$^{2+}$ doping induces defective states within the bandgaps of pristine CsCaX$_3$. As a result, the Yb$^{2+}$ doped CsCaX$_3$ (X: Cl, Br, I) become the direct bandgap semiconductors. The defective states above the VBM are produced due to the $f$-orbital of the Yb atom. The impurity states near the CBM are induced due to the major contribution of $d$-orbital of the Yb atom and the minor contribution of $s$-orbital of the Cs atom. The real and imaginary parts of the dielectric function, optical reflectivity, electron energy loss spectrum, extinction coefficient, and refractive index of pristine and Yb$^{2+}$ doped CsCaX$_3$ were studied. The optical dispersion results of dielectric susceptibility closely match their relevant electronic structure and align with previously reported theoretical and experimental data. We conclude that the Yb$^{2+}$ doped CsCaX$_3$ (X: Cl, Br, I) are appealing candidates for optoelectronic devices.

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