Electrochemical growth and characterization of a p-Cu2O thin film on n-ZnO nanorods for solar cell application

RSC Advances ◽  
2014 ◽  
Vol 4 (15) ◽  
pp. 7655 ◽  
Author(s):  
Yu-Kuei Hsu ◽  
Hung-Hsun Lin ◽  
Jan-Rung Wu ◽  
Mei-Hsin Chen ◽  
Ying-Chu Chen ◽  
...  
Solar Energy ◽  
2015 ◽  
Vol 122 ◽  
pp. 1193-1198 ◽  
Author(s):  
Mahmoud Abdelfatah ◽  
Johannes Ledig ◽  
Abdelhamid El-Shaer ◽  
Alexander Wagner ◽  
Azat Sharafeev ◽  
...  

2021 ◽  
Vol 120 ◽  
pp. 111430
Author(s):  
Sonam Tripathi ◽  
Rahul Srivastva ◽  
Brijesh Kumar ◽  
D.K. Dwivedi

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Chao-Chun Wang ◽  
Dong-Sing Wuu ◽  
Shui-Yang Lien ◽  
Yang-Shih Lin ◽  
Chueh-Yang Liu ◽  
...  

The nanocrystalline silicon-germanium (nc-SiGe) thin films were deposited by high-frequency (27.12 MHz) plasma-enhanced chemical vapor deposition (HF-PECVD). The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.


2016 ◽  
Vol 367 ◽  
pp. 480-484 ◽  
Author(s):  
Xiaoyan Yang ◽  
Bo Liu ◽  
Bing Li ◽  
Jingquan Zhang ◽  
Wei Li ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document