Gate field induced ordered electric dipoles in a polymer dielectric for low-voltage operating organic thin-film transistors

RSC Advances ◽  
2013 ◽  
Vol 3 (43) ◽  
pp. 20267 ◽  
Author(s):  
Wei-Yang Chou ◽  
Tsung-Yeh Ho ◽  
Horng-Long Cheng ◽  
Fu-Ching Tang ◽  
Jiann Heng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Polymer Dielectric ◽  
Electric Dipoles

scholarly journals Low-voltage organic thin-film transistors based on [n]phenacenes

2019 ◽  
Vol 73 ◽  
pp. 286-291
Author(s):  
Afra Al Ruzaiqi ◽  
Hideki Okamoto ◽  
Yoshihiro Kubozono ◽  
Ute Zschieschang ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

scholarly journals Flexible low-voltage high-frequency organic thin-film transistors

2020 ◽  
Vol 6 (21) ◽  
pp. eaaz5156 ◽  
Author(s):  
James W. Borchert ◽  
Ute Zschieschang ◽  
Florian Letzkus ◽  
Michele Giorgio ◽  
R. Thomas Weitz ◽  
...  
Keyword(s):  
Thin Film ◽  
High Frequency ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Dynamic Performance ◽  
Lithium Ion ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Industry Standard ◽  
Primary Driver

The primary driver for the development of organic thin-film transistors (TFTs) over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or amplification at the low operating voltages provided by lithium-ion batteries (~3 V). To date, however, most organic-TFT technologies show limited dynamic performance unless high operating voltages are applied to mitigate high contact resistances and large parasitic capacitances. Here, we present flexible low-voltage organic TFTs with record static and dynamic performance, including contact resistance as small as 10 Ω·cm, on/off current ratios as large as 1010, subthreshold swing as small as 59 mV/decade, signal delays below 80 ns in inverters and ring oscillators, and transit frequencies as high as 21 MHz, all while using an inverted coplanar TFT structure that can be readily adapted to industry-standard lithographic techniques.

Low-Temperature Cross-Linking Benzocyclobutene Based Polymer Dielectric for Organic Thin Film Transistors on Plastic Substrates

2019 ◽  
Vol 85 (1) ◽  
pp. 277-283 ◽  
Author(s):  
Rawad K. Hallani ◽  
Maximilian Moser ◽  
Helen Bristow ◽  
Maud V. C. Jenart ◽  
Hendrik Faber ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Cross Linking ◽  
Organic Thin Film ◽  
Plastic Substrates ◽  
Polymer Dielectric

SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film Transistors

MRS Advances ◽  
2018 ◽  
Vol 3 (49) ◽  
pp. 2931-2936
Author(s):  
G. Kitahara ◽  
K. Aoshima ◽  
J. Tsutsumi ◽  
H. Minemawari ◽  
S. Arai ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Base Layer ◽  
Organic Thin Film ◽  
Low Voltage Operation ◽  
Silver Electrodes

ABSTRACTRecently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPR-NaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes.

High-Performance Low Voltage Organic Thin-Film Transistors

2005 ◽  
Vol 870 ◽  
Author(s):  
Stijn De Vusser ◽  
Soeren Steudel ◽  
Kris Myny ◽  
Jan Genoe ◽  
Paul Heremans
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Organic Thin Film Transistors ◽  
Ring Oscillator ◽  
Ring Oscillators ◽  
Organic Thin Film ◽  
Supply Voltages

AbstractIn this work, we report on high-performance low voltage pentacene Organic Thin-Film Transistors (OTFT's) and circuits. Inverters and ring oscillators have been designed and fabricated. At 15 V supply voltage, we have observed invertors showing a voltage gain of 9 and an output swing of more than 13 V. As for the ring oscillators, oscillations started at supply voltages as low as 8.5 V. At a supply voltage of only 15 V, a stage delay time of 3.3 νs is calculated from experimental results.We believe that these results show for the first time a high speed ring oscillator at relatively low supply voltages. The required supply voltages can be obtained by rectification using an organic (pentacene) diode. These results may have an important impact on the realization of RF-ID tags: by integrating our circuits with an organic diode, the fabrication of organic RF-ID tags comes closer.

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