Effect of sulphur vacancy on geometric and electronic structure of MoS2 induced by molecular hydrogen treatment at room temperature

RSC Advances ◽  
2013 ◽  
Vol 3 (40) ◽  
pp. 18424 ◽  
Author(s):  
Byung Hoon Kim ◽  
Min Park ◽  
Minoh Lee ◽  
Seung Jae Baek ◽  
Hu Young Jeong ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Molecular Hydrogen ◽  
Room Temperature ◽  
Hydrogen Treatment ◽  
Sulphur Vacancy

Conformation and electronic structure of aromatic chloroformates

1987 ◽  
Vol 52 (4) ◽  
pp. 970-979 ◽  
Author(s):  
Otto Exner ◽  
Pavel Fiedler
Keyword(s):  
Electronic Structure ◽  
Oxygen Atom ◽  
Strong Interaction ◽  
Electron Distribution ◽  
Room Temperature ◽  
Functional Group ◽  
Dipole Moments ◽  
Carbonyl Oxygen ◽  
Nonpolar Solvents ◽  
Single Method

Aromatic chloroformates Ib-Ie were shown to exist in the ap conformation, in agreement with aliphatic chloroformates, i.e. the alkyl group is situated cis to the carbonyl oxygen atom as it is the case in all esters. While 4-nitrophenyl chloroformate (Ie) is in this conformation in crystal, in solution at most several tenths of percent of the sp conformation may be populated at room temperature and in nonpolar solvents only. A new analysis of dipole moments explained the previous puzzling results and demonstrated the impossibility to determine the conformation by this single method, in consequence of the strong interaction of adjoining bonds. If, however, the ap conformation is once proven, the dipole moments reveal some features of the electron distribution on the functional group, characterized by the enhanced polarity of the C-Cl bond and reduced polarity of the C=O bond. This is in agreement with the observed bond lengths and angles.

Electronic structure of the layered room-temperature antiferromagnet AlMn2B2

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Xiangle Lu ◽  
Hao Su ◽  
Liqin Zhou ◽  
Jiacheng Gao ◽  
Man Li ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Room Temperature

Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature ZT in tin telluride

2019 ◽  
Vol 7 (16) ◽  
pp. 4817-4821 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
High Performance ◽  
Room Temperature ◽  
Band Offset ◽  
Valence Band Offset ◽  
Co Doping ◽  
Tin Telluride ◽  
Structure Engineering

Resonance states due to Bi and In co-doping, band gap enlargement, and a reduced valence-band offset in SnTe lead to a record high room-temperature ZT.

Room temperature observation of the correlation between atomic and electronic structure of graphene on Cu(110)

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98001-98009 ◽  
Author(s):  
Thais Chagas ◽  
Thiago H. R. Cunha ◽  
Matheus J. S. Matos ◽  
Diogo D. dos Reis ◽  
Karolline A. S. Araujo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Chemical Vapor Deposition ◽  
Scanning Tunneling Microscopy ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Observation ◽  
Atomic And Electronic Structure

We have used atomically-resolved scanning tunneling microscopy and spectroscopy to study the interplay between the atomic and electronic structure of graphene formed on copper via chemical vapor deposition.

Local electronic structure around Mn and Ga in Mn-doped GaN films showing room temperature ferromagnetism

2005 ◽  
Vol 133 (3) ◽  
pp. 177-182 ◽  
Author(s):  
Saki Sonoda ◽  
Yoshiyuki Yamamoto ◽  
Takahiko Sasaki ◽  
Ken-chi Suga ◽  
Koichi Kindo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Local Electronic Structure ◽  
Mn Doped

Electronic Structure and Surface Science of delta Plutonium

2003 ◽  
Vol 802 ◽  
Author(s):  
M. Butterfield ◽  
T. Durakiewicz ◽  
E. Guziewicz ◽  
J. J. Joyce ◽  
D. P. Moore ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Laser Ablation ◽  
High Resolution ◽  
Valence Band ◽  
Surface Science ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Instrument Resolution ◽  
Δ Phase

AbstractHigh resolution photoelectron spectroscopy (PES) studies were conducted on a δ-phase Plutonium sample cleaned by laser ablation and gas dosed with O2 and H2. The measurements were made with an instrument resolution of 60 meV and with the sample at 77 K. The PES data strongly support a model with Pu2O3 growth on the metal and then PuO2 growth on the Pu2O3 layer at this temperature. In vacuum, the PuO2 reduces to Pu2O3 at room temperature with a pressure of 6×10−11 Torr. In the case of H2 dosing the hydrogen appears to penetrate the surface and disrupt the valence band as evidenced by a drop in intensity of the peak at EF which is not accompanied by a drop in the main 5f manifold at ∼2eV.

Electronic structure, optical and magnetic studies of PLD-grown (Mn, P)-doped ZnO nanocolumns at room temperature

2017 ◽  
Vol 50 (29) ◽  
pp. 295002 ◽  
Author(s):  
The-Long Phan ◽  
T A Ho ◽  
N T Dang ◽  
Manh Cuong Nguyen ◽  
Van-Duong Dao
Keyword(s):  
Electronic Structure ◽  
Room Temperature ◽  
Magnetic Studies ◽  
Doped Zno

Effect of Hydrogen Treatment on Room -Temperature Electric-Field Induced Properties in Narrow-Gap ZnCdHgTe Thin Films

2004 ◽  
Vol 813 ◽  
Author(s):  
Galina M. Khlyap ◽  
Petro G. Sydorchuk ◽  
Jacek Polit
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Hydrogen Treatment ◽  
Narrow Gap ◽  
Glass Substrates ◽  
Semiconductor Thin Films ◽  
Visible Wavelength Range ◽  
Current Voltage ◽  
Before And After ◽  
First Time

ABSTRACTThe effect of hydrogen treatment on room temperature electric properties of narrow-gap semiconductor thin films ZnxCdyHg1−z−yTe (0 < x < 0.50, 0.20 < y < 0.40) is investigated for the first time. ZnCdHgTe films of 2 – 5 [.proportional]m thickness were grown on glass substrates by pulsed laser deposition technique. As-grown films were thermally treated in the flow of molecular H2 at 200°C during 24 hours. Comparison between electric characteristics measured before and after hydrogenation showed sufficient changes of the film resistance and appearance of photosensitivity in the visible wavelength range. Study of current-voltage characteristics of the films revealed appearance and significant change of diode-like properties.

Sign in / Sign up

Export Citation Format

Share Document