Wide band gap copolymers based on phthalimide: synthesis, characterization, and photovoltaic properties with 3.70% efficiency

2013 ◽  
Vol 4 (6) ◽  
pp. 2174 ◽  
Author(s):  
Jianhua Huang ◽  
Xue Wang ◽  
Chuanlang Zhan ◽  
Yan Zhao ◽  
Yuxi Sun ◽  
...  
Molecules ◽  
2020 ◽  
Vol 25 (18) ◽  
pp. 4101
Author(s):  
Siyang Liu ◽  
Shuwang Yi ◽  
Peiling Qing ◽  
Weijun Li ◽  
Bin Gu ◽  
...  

The novel and appropriate molecular design for polymer donors are playing an important role in realizing high-efficiency and high stable polymer solar cells (PSCs). In this work, four conjugated polymers (PIDT-O, PIDTT-O, PIDT-S and PIDTT-S) with indacenodithiophene (IDT) and indacenodithieno [3,2-b]thiophene (IDTT) as the donor units, and alkoxy-substituted benzoxadiazole and benzothiadiazole derivatives as the acceptor units have been designed and synthesized. Taking advantages of the molecular engineering on polymer backbones, these four polymers showed differently photophysical and photovoltaic properties. They exhibited wide optical bandgaps of 1.88, 1.87, 1.89 and 1.91 eV and quite impressive hole mobilities of 6.01 × 10−4, 7.72 × 10−4, 1.83 × 10−3, and 1.29 × 10−3 cm2 V−1 s−1 for PIDT-O, PIDTT-O, PIDT-S and PIDTT-S, respectively. Through the photovoltaic test via using PIDT-O, PIDTT-O, PIDT-S and PIDTT-S as donor materials and [6,6]-phenyl-C-71-butyric acid methyl ester (PC71BM) as acceptor materials, all the PSCs presented the high open circuit voltages (Vocs) over 0.85 V, whereas the PIDT-S and PIDTT-S based devices showed higher power conversion efficiencies (PCEs) of 5.09% and 4.43%, respectively. Interestingly, the solvent vapor annealing (SVA) treatment on active layers could improve the fill factors (FFs) extensively for these four polymers. For PIDT-S and PIDTT-S, the SVA process improved the FFs exceeding 71%, and ultimately the PCEs were increased to 6.05%, and 6.12%, respectively. Therefore, this kind of wide band-gap polymers are potentially candidates as efficient electron-donating materials for constructing high-performance PSCs.


2020 ◽  
Vol 11 (9) ◽  
pp. 1629-1636 ◽  
Author(s):  
Pan Wan ◽  
Cunbin An ◽  
Tao Zhang ◽  
Kangqiao Ma ◽  
Ningning Liang ◽  
...  

Two thiazolothiazole-based polymers were designed and synthesized, which exhibited significantly different aggregation and photovoltaic properties.


2019 ◽  
Vol 10 (3) ◽  
pp. 395-402 ◽  
Author(s):  
Yuxiang Li ◽  
Jin-Woo Lee ◽  
Minseok Kim ◽  
Changyeon Lee ◽  
Young Woong Lee ◽  
...  

The effects of different fluorine substituent topologies on the morphological and photovoltaic properties are studied for two regioisomeric donor polymer-based nonfullerene organic solar cells.


Author(s):  
Joanna L. Batstone

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.


Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  

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