The Tolman electronic parameter (TEP) and the metal–metal electronic communication in ditopic NHC complexes

2013 ◽  
Vol 42 (20) ◽  
pp. 7359 ◽  
Author(s):  
Dmitry G. Gusev ◽  
Eduardo Peris
2006 ◽  
Vol 45 (23) ◽  
pp. 9493-9501 ◽  
Author(s):  
F. Albert Cotton ◽  
Chun Y. Liu ◽  
Carlos A. Murillo ◽  
Qinliang Zhao

2012 ◽  
Vol 51 (3) ◽  
pp. 1228-1230 ◽  
Author(s):  
Satoru Tsukada ◽  
Yusuke Shibata ◽  
Ryota Sakamoto ◽  
Tetsuya Kambe ◽  
Tomoji Ozeki ◽  
...  

Author(s):  
K. L. Merkle

The atomic structures of internal interfaces have recently received considerable attention, not only because of their importance in determining many materials properties, but also because the atomic structure of many interfaces has become accessible to direct atomic-scale observation by modem HREM instruments. In this communication, several interface structures are examined by HREM in terms of their structural periodicities along the interface.It is well known that heterophase boundaries are generally formed by two low-index planes. Often, as is the case in many fcc metal/metal and metal/metal-oxide systems, low energy boundaries form in the cube-on-cube orientation on (111). Since the lattice parameter ratio between the two materials generally is not a rational number, such boundaries are incommensurate. Therefore, even though periodic arrays of misfit dislocations have been observed by TEM techniques for numerous heterophase systems, such interfaces are quasiperiodic on an atomic scale. Interfaces with misfit dislocations are semicoherent, where atomically well-matched regions alternate with regions of misfit. When the misfit is large, misfit localization is often difficult to detect, and direct determination of the atomic structure of the interface from HREM alone, may not be possible.


2020 ◽  
Author(s):  
Shubham Deolka ◽  
Orestes Rivada Wheelaghan ◽  
Sandra Aristizábal ◽  
Robert Fayzullin ◽  
Shrinwantu Pal ◽  
...  

We report selective formation of heterobimetallic PtII/CuI complexes that demonstrate how facile bond activation processes can be achieved by altering reactivity of common organoplatinum compounds through their interaction with another metal center. The interaction of the Cu center with Pt center and with a Pt-bound alkyl group increases the stability of PtMe2 towards undesired rollover cyclometalation. The presence of the CuI center also enables facile transmetalation from electron-deficient tetraarylborate [B(ArF)4]- anion and mild C-H bond cleavage of a terminal alkyne, which was not observed in the absence of an electrophilic Cu center. The DFT study indicates that the role of Cu center acts as a binding site for alkyne substrate, while activating its terminal C-H bond.


2020 ◽  
Author(s):  
Thomas Herzog ◽  
Naomi Weitzel ◽  
Sebastian Polarz

<div><div><div><p>One of the fascinating properties of metal-semiconductor Schottky-barriers, which has been observed for some material combinations, is memristive behavior. Memristors are smart, since they can reversibly switch between a low resistance state and a high resistance state. The devices offer a great potential for advanced computing and data storage, including neuromorphic networks and resistive random-access memory. However, as for many other cases, the presence of a real interface (metal - metal oxide) has numerous disadvantages. The realization of interface-free, respectively Schottky-barrier free memristors is highly desirable. The aim of the current paper is the generation of nanowire arrays with each nanorod possessing the same crystal phase (Rutile) and segments only differing in composition. The electric conductivity is realized by segments made of highly-doped antimony tin oxide (ATO) transitioning into pure tin oxide (TO). Complex nanoarchitectures are presented, which include ATO-TO, ATO-TO-ATO nanowires either with a stepwise distribution of antimony or as a graded functional material. The electrical characterization of the materials reveals that the introduction of memristive properties in such structures is possible. The special features observed in voltage-current (IV) curves are correlated to the behavior of mobile oxygen vacancies (VO..) at different values of applied electrical potential.</p></div></div></div>


In recent decades, the phenomenon of mass electronic communication has been studied by various sciences. The right also turned out to be included in a similar discourse. Communication in the digital environment is the reason for the interaction of previously distant segments of society. In modern law, the concept of electronic communication remains in a certain sense debatable, it is often identified with legal communication. At the same time, electronic communication has an additional «dimension». The globalization of the information space encourages legal scholars to study electronic communication as the action and interaction of various actors, based on Internet technologies using web services, portals, blogs, websites, social networks. There is a need for re- levant legal regulation of the informational interaction between the authorities and society in the Republic of Belarus, in connection with which a new «field» is opening up for activities in various areas of law. The meaning of electronic communication is constantly expanding and, depending on the specialization, even varies. For an adequate understanding of electronic communication, law must take into account the tools of other humanities. In contact with the digital environment, legal science is called upon to reformat research tasks to explain the new empirical and theoretical experience associated with the transformation of the paradigm of interaction between the state and society in the network structures. The author comprehends these issues in relation to the conditions of development of e-government in the Republic of Belarus and the need for more active involvement of the public in the government.


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