Strain engineering the properties of graphene and other two-dimensional crystals

2014 ◽  
Vol 16 (23) ◽  
pp. 11124-11138 ◽  
Author(s):  
Mark A. Bissett ◽  
Masaharu Tsuji ◽  
Hiroki Ago
Keyword(s):  
Transition Metal ◽  
Thin Layer ◽  
Transition Metal Dichalcogenides ◽  
Strain Engineering ◽  
Two Dimensional ◽  
Recent Advances ◽  
Metal Dichalcogenides

This perspective discusses recent advances in using strain to engineer the properties of thin-layer materials such as graphene and transition metal dichalcogenides (TMDs).

Recent advances in two-dimensional transition metal dichalcogenides for biological sensing

2019 ◽  
Vol 142 ◽  
pp. 111573 ◽  
Author(s):  
Huawen Hu ◽  
Ali Zavabeti ◽  
Haiyan Quan ◽  
Wuqing Zhu ◽  
Hongyang Wei ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Biological Sensing ◽  
Recent Advances ◽  
Metal Dichalcogenides

Two-dimensional transistors beyond graphene and TMDCs

2018 ◽  
Vol 47 (16) ◽  
pp. 6388-6409 ◽  
Author(s):  
Yuan Liu ◽  
Xidong Duan ◽  
Yu Huang ◽  
Xiangfeng Duan
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Recent Advances ◽  
Metal Dichalcogenides

We present an overview of the recent advances in two-dimensional transistors beyond graphene and transition metal dichalcogenides.

Bidirectional doping of two-dimensional thin-layer transition metal dichalcogenides by soft ammonia plasma

Nanoscale ◽  
2021 ◽  
Author(s):  
Pu Tan ◽  
Kaixuan Ding ◽  
Xiumei Zhang ◽  
Zhenhua Ni ◽  
Kostya Ostrikov ◽  
...  
Keyword(s):  
Transition Metal ◽  
Thin Layer ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
High Mobility ◽  
Two Dimensional ◽  
Layer Transition ◽  
Microelectronic Devices ◽  
Metal Dichalcogenides ◽  
P Type

Because of suitable band gap and high mobility, two-dimensional transition metal dichalcogenides (TMDs) materials are promising in future microelectronic devices. However, controllable p-type and n-type doping of TMDs is still...

scholarly journals Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

RSC Advances ◽  
2020 ◽  
Vol 10 (65) ◽  
pp. 39455-39467
Author(s):  
Yalan Yan ◽  
Shuang Ding ◽  
Xiaonan Wu ◽  
Jian Zhu ◽  
Dengman Feng ◽  
...  
Keyword(s):  
Transition Metal ◽  
Physical Properties ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Strain Engineering ◽  
Two Dimensional ◽  
Photoelectric Properties ◽  
Metal Dichalcogenides

Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties.

Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges

2020 ◽  
Vol 5 (5) ◽  
pp. 787-807 ◽  
Author(s):  
Wugang Liao ◽  
Siwen Zhao ◽  
Feng Li ◽  
Cong Wang ◽  
Yanqi Ge ◽  
...  
Keyword(s):  
Transition Metal ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Next Generation ◽  
Interface Engineering ◽  
Recent Advances ◽  
Metal Dichalcogenides

This review presents recent advances and challenges in the interface engineering of 2D TMDCs and emerging electronics based on TMDCs.

Sign in / Sign up

Export Citation Format

Share Document