A hybrid solar cell fabricated using amorphous silicon and a fullerene derivative

2013 ◽  
Vol 15 (45) ◽  
pp. 19913 ◽  
Author(s):  
Myoung Hee Yun ◽  
Ji Hoon Jang ◽  
Kyung Min Kim ◽  
Hee-eun Song ◽  
Jeong Chul Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Hybrid Solar Cell ◽  
Fullerene Derivative

An inorganic/organic hybrid solar cell consisting of Cu2O and a fullerene derivative

2012 ◽  
Vol 526 ◽  
pp. 191-194 ◽  
Author(s):  
M. Alam Khan ◽  
Wilman Septina ◽  
Shigeru Ikeda ◽  
Michio Matsumura
Keyword(s):  
Solar Cell ◽  
Hybrid Solar Cell ◽  
Fullerene Derivative ◽  
Organic Hybrid

Synergistic Effect of Single-Walled Carbon Nanotubes and PEDOT:PSS in Thin Film Amorphous Silicon Hybrid Solar Cell

2017 ◽  
Vol 255 (1) ◽  
pp. 1700557 ◽  
Author(s):  
Alena A. Alekseeva ◽  
Pramod Mulbagal Rajanna ◽  
Anton S. Anisimov ◽  
Oleg Sergeev ◽  
Sergei Bereznev ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Solar Cell ◽  
Synergistic Effect ◽  
Amorphous Silicon ◽  
Single Walled Carbon Nanotubes ◽  
Hybrid Solar Cell ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

An amorphous silicon random nanocone/polymer hybrid solar cell

2011 ◽  
Vol 95 (8) ◽  
pp. 2431-2436 ◽  
Author(s):  
Zingway Pei ◽  
Subramani Thiyagu ◽  
Ming-Sian Jhong ◽  
Wei-Shang Hsieh ◽  
Shor-Jen Cheng ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Hybrid Solar Cell ◽  
Polymer Hybrid

Carbon nanotube–amorphous silicon hybrid solar cell with improved conversion efficiency

2016 ◽  
Vol 27 (18) ◽  
pp. 185401 ◽  
Author(s):  
Adinath M Funde ◽  
Albert G Nasibulin ◽  
Hashmi Gufran Syed ◽  
Anton S Anisimov ◽  
Alexey Tsapenko ◽  
...  
Keyword(s):  
Solar Cell ◽  
Carbon Nanotube ◽  
Amorphous Silicon ◽  
Conversion Efficiency ◽  
Hybrid Solar Cell

Experimental and Theoretical Comparable Study of Pure and Zinc Porphyrin Surface Modified ZnO Nanorod Arrays for Hybrid Solar Cell Applications

2020 ◽  
pp. 114-119
Keyword(s):  
Solar Cell ◽  
Electrochemical Impedance ◽  
Hybrid Solar Cell ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Annealing Effects ◽  
Vertically Aligned ◽  
Surface Modified

Experimental and theoretical study Porphyrin-grafted ZnO nanowire arrays were investigated for organic/inorganic hybrid solar cell applications. Two types of porphyrin – Tetra (4-carboxyphenyle) TCPP and meso-Tetraphenylporphine (Zinc-TPP)were used to modify the nanowire surfaces. The vertically aligned nanowires with porphyrin modifications were embedded in graphene-enriched poly (3-hexylthiophene) [G-P3HT] for p-n junction nanowire solar cells. Surface grafting of ZnO nanowires was found to improve the solar cell efficiency. There are different effect for the two types of porphyrin as results of Zn existing. Annealing effects on the solar cell performance were investigated by heating the devices up to 225 °C in air. It was found that the cell performance was significantly degraded after annealing. The degradation was attributed to the polymer structural change at high temperature as evidenced by electrochemical impedance spectroscopy measurements.

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Layer Growth ◽  
Surface Recombination Velocity ◽  
Back Contact ◽  
P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

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