scholarly journals Thin films of Co1.7Fe1.3O4 prepared by radio frequency sputtering – the first step towards their spinodal decomposition

CrystEngComm ◽  
2014 ◽  
Vol 16 (16) ◽  
pp. 3359-3365 ◽  
Author(s):  
T. M. A. Bui ◽  
H. Le Trong ◽  
L. Presmanes ◽  
A. Barnabé ◽  
C. Bonningue ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Radio Frequency ◽  
Spinodal Decomposition ◽  
Radio Frequency Sputtering

Co1.7Fe1.3O4 thin films are submitted to spinodal transformation after annealing at low temperature.

Structural study of NiOx thin films fabricated by radio frequency sputtering at low temperature

2018 ◽  
Vol 646 ◽  
pp. 209-215 ◽  
Author(s):  
Zhang Song ◽  
Tiphaine Bourgeteau ◽  
Itaru Raifuku ◽  
Yvan Bonnassieux ◽  
Erik Johnson ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Radio Frequency ◽  
Structural Study ◽  
Radio Frequency Sputtering

Radio frequency sputtering of ferrimagnetic thin films

1971 ◽  
Vol 21 (4-5) ◽  
pp. 558-562 ◽  
Author(s):  
R. Metselaar ◽  
P. Rem
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Radio Frequency Sputtering

scholarly journals Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4046
Author(s):  
Guo-Dong Hao ◽  
Manabu Taniguchi ◽  
Shin-ichiro Inoue
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Hexagonal Boron Nitride ◽  
Annealing Treatment ◽  
Optical Transmittance ◽  
Hexagonal Structure ◽  
Light Transmittance ◽  
Radio Frequency Sputtering ◽  
Deep Ultraviolet ◽  
Deposition Processes

Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al0.7Ga0.3N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N2) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N2 ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices.

scholarly journals High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

2019 ◽  
Vol 100 ◽  
pp. 8-14 ◽  
Author(s):  
A. Núñez-Cascajero ◽  
R. Blasco ◽  
S. Valdueza-Felip ◽  
D. Montero ◽  
J. Olea ◽  
...  
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
High Quality ◽  
Radio Frequency Sputtering

scholarly journals Photocarrier generation in CuxO thin films deposited by radio frequency sputtering

2013 ◽  
Vol 102 (3) ◽  
pp. 032101 ◽  
Author(s):  
Thien Viet Pham ◽  
Manohar Rao ◽  
P. Andreasson ◽  
Yuan Peng ◽  
Junling Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Radio Frequency Sputtering

scholarly journals Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Seunghun Lee ◽  
Ji Young Kim ◽  
Tae-Woo Lee ◽  
Won-Kyung Kim ◽  
Bum-Su Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Single Crystal ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Radio Frequency Sputtering
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