In situ fabrication of porous MoS2 thin-films as high-performance catalysts for electrochemical hydrogen evolution

2013 ◽  
Vol 49 (68) ◽  
pp. 7516 ◽  
Author(s):  
Zhiyi Lu ◽  
Haichuan Zhang ◽  
Wei Zhu ◽  
Xiaoyou Yu ◽  
Yun Kuang ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrogen Evolution ◽  
High Performance ◽  
In Situ Fabrication

In-situ growth of high-performance (Ag, Sn) co-doped CoSb3 thermoelectric thin films

2021 ◽  
Author(s):  
Zhuang-Hao Zheng ◽  
Jun-Yun Niu ◽  
Dong-Wei Ao ◽  
Bushra Jabar ◽  
Xiao-Lei Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
In Situ Growth ◽  
Thermoelectric Thin Films ◽  
Co Doped

In Situ Growth of Sn-Doped Ni3S2Nanosheets on Ni Foam as High-Performance Electrocatalyst for Hydrogen Evolution Reaction

2017 ◽  
Vol 4 (3) ◽  
pp. 594-600 ◽  
Author(s):  
Jing Yu ◽  
Fei-Xiang Ma ◽  
Yue Du ◽  
Pan-Pan Wang ◽  
Cheng-Yan Xu ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
High Performance ◽  
In Situ Growth ◽  
Ni Foam

In‐Situ Fabrication of YBa2Cu3O7‐x Superconducting Thin Films Directly on Silicon Substrates with Tc0 > 77K

1989 ◽  
Vol 169 ◽  
Author(s):  
C. B. Lee ◽  
R. K. Singh ◽  
S. Sharan ◽  
A. K. Singh ◽  
P. Tiwari ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Pulses ◽  
Superconducting Film ◽  
Laser Evaporation ◽  
Silicon Substrates ◽  
Superconducting Thin Films ◽  
Si Substrates ◽  
In Situ Fabrication ◽  
Substrate Temperatures

AbstractWe report in‐situ fabrication of c‐axis textured YBa2Cu3O7‐x superconducting thin films with Tco > 77K on unbuffered silicon substrates by the biased pulsed laser evaporation (PLE) technique in the temperature range of 550‐650°C. At substrate temperatures below 550°C, no c‐axis texturing of the superconducting film was observed. The YBa2Cu3O7‐x superconducting films were fabricated by ablating a bulk YBa2Cu3O7 target by a XeCl excimer laser (λ = 308 nm, τ = 45 × 10‐9 sec) in a chamber maintained at an oxygen pressure of 0.2 torr . The thickness of the films was varied from 0.3 to 0.5 nm depending on the number of laser pulses. Extensive diffusion was observed in thin films deposited at substrate temperatures above 550°C. However, microstructurally, with increase in the substrate temperature the films exhibited larger grain size and greater degree of c‐axis texturing (measured by the ratio of the (005) and (110) X‐ray diffraction peaks). This was found to give rise to better superconducting properties with Tco exceeding 77 K for YBa2Cu3O7‐x films deposited on Si substrates at 650°C.

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