Synthesis and sonication-induced assembly of Si-DDR particles for close-packed oriented layers

2013 ◽  
Vol 49 (67) ◽  
pp. 7418 ◽  
Author(s):  
Eunjoo Kim ◽  
Wanxi Cai ◽  
Hionsuck Baik ◽  
Jaewook Nam ◽  
Jungkyu Choi
Keyword(s):  
Oriented Layers

Strain in 3C–SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates

2008 ◽  
Vol 600-603 ◽  
pp. 207-210 ◽  
Author(s):  
Marcin Zielinski ◽  
Marc Portail ◽  
Thierry Chassagne ◽  
Yvon Cordier
Keyword(s):  
Gaseous Phase ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Silicon Substrates ◽  
Phase Growth ◽  
Growth Duration ◽  
Strain Control ◽  
Heteroepitaxial Layers ◽  
Oriented Layers ◽  
Sic Films

We discuss the influence of the growth conditions (composition of the gaseous phase, growth duration, growth temperature) and wafer properties (orientation, miscut, thickness) on the residual strain of 3C-SiC films grown on silicon substrates. We show that the strain related effects are observed for both studied orientations however some of them (namely the creep effects) were up to now stated only for (100) oriented layers. We also point out the main difference in strain control between the (111) and (100) orientations.

Design of Alumina/Alumina Laminate Composites with Crystalline-Orientated Layers Produced by Electrophoretic Deposition under a High Magnetic Field

2006 ◽  
Vol 314 ◽  
pp. 25-32
Author(s):  
Tetsuo Uchikoshi ◽  
Tohru Suzuki ◽  
Hideo Okuyama ◽  
Yoshio Sakka
Keyword(s):  
Magnetic Field ◽  
Electrophoretic Deposition ◽  
Orientation Angle ◽  
Layer By Layer ◽  
Alumina Ceramics ◽  
X Ray Diffraction ◽  
Laminate Composites ◽  
Laminar Composites ◽  
The Magnetic Field ◽  
Oriented Layers

Highly crystalline-textured alumina ceramics were fabricated by electrophoretic deposition (EPD) in a strong magnetic field of 12 T. Preferred orientation of the bulk was controlled by changing the direction of the applied electric field E relative to the magnetic field B during the EPD. Average orientation angle of the prepared monoliths as a function of the angle between the vectors E and B, ϕ B-E was estimated from the X-ray diffraction analysis. Alumina/alumina laminar composites with crystalline- oriented layers were also fabricated by alternately changing the ϕ B-E layer by layer during EPD in a magnetic field of 12 T.

Effects of systematic variation of wood adherend bending stiffness on fracture properties: Part 1. Influence of grain angle

Holzforschung ◽  
2012 ◽  
Vol 66 (6) ◽  
pp. 765-770 ◽  
Author(s):  
Edoardo Nicoli ◽  
David A. Dillard ◽  
Charles E. Frazier
Keyword(s):  
Strain Energy ◽  
Strain Energy Release Rate ◽  
Strain Energy Release ◽  
Elastic Stiffness ◽  
Fracture Properties ◽  
Morphological Aspects ◽  
Wood Beams ◽  
Data Scatter ◽  
Stiffness Variation ◽  
Oriented Layers

Abstract When wood beams are bonded to form double cantilever beam (DCB) specimens, the resulting fracture properties are often quite scattered. Random variations of properties of wood are usually considered as the reason for the data scatter, but there are also morphological aspects that can possibly be accounted for. The present paper focuses on these morphological aspects and, in particular, an analytical model has been developed for evaluating how the orientation and stiffness of the layers of beams of constant cross section influences the stiffness variation of the beam along its length. Wood in DCBs is a common example of a material with oriented layers resulting from the alternating earlywood (EW) and latewood (LW). Part of the paper is dedicated to Douglas fir (Pseudotsuga menziesii), where the variability of equivalent elastic stiffness is found to be on the order of ±6–8% in bonded DCBs, depending on grain orientation. Other representative cases of bonded wood beams are also presented, where the stiffness variability is on the order of ±15–20%. Part 2 of this paper will evaluate how these levels of elastic stiffness variations influence the measured critical strain energy release rate, .

Reorientation of π-conjugated molecules on few-layer MoS2 films

2020 ◽  
Vol 22 (5) ◽  
pp. 3097-3104 ◽  
Author(s):  
Jakub Hagara ◽  
Nada Mrkyvkova ◽  
Peter Nádaždy ◽  
Martin Hodas ◽  
Michal Bodík ◽  
...  
Keyword(s):  
Conjugated Molecules ◽  
Standing Up ◽  
Vertically Aligned ◽  
Oriented Layers ◽  
Lying Down

We show that small π-conjugated molecules adopt a lying-down orientation when deposited on few-layer MoS2 with horizontally oriented layers. In contrast, for vertically aligned MoS2 layers, DIP molecules are arranged in a standing-up manner.

Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application

2007 ◽  
Vol 556-557 ◽  
pp. 655-658 ◽  
Author(s):  
Andreas Fissel ◽  
M. Czernohorsky ◽  
R. Dagris ◽  
H.J. Osten
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gadolinium Oxide ◽  
Flat Band ◽  
Growth Interface ◽  
X Ray ◽  
Fixed Charges ◽  
High K ◽  
Structural And Electrical Properties ◽  
Cv Measurements ◽  
Oriented Layers

We investigated the growth, interface formation as well as the structural and electrical properties of crystalline gadolinium oxide (Gd2O3) directly grown on 6H-SiC(0001) substrates by molecular beam epitaxy. The Gd2O3 layers were found to grow epitaxially resulting in the formation of flat (111) oriented layers with the cubic bixbyite type of structure. X-ray photoelectron spectroscopy measurements reveal a silicate-like Gd2O3/SiC interface. Furthermore, conduction and valence band discontinuities at the Gd2O3/6H-SiC interface were estimated with 1.9 eV and 1.2 eV, respectively. The fabricated capacitors exhibit suitable dielectric properties at room temperature; such as a dielectric constant of ε = 22, a leakage current of 10-8 A/cm2@1V and breakdown fields > 4.3 MV/cm for layers with 14 nm thickness. The CV measurements exhibit only small negative flat band shifts and a very small hysteresis, resulting from fixed charges or interface trap levels in the range of 1x1012 cm-2. These properties make Gd2O3 suitable for high-k application also for SiC.

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