Field-modified multiple slow relaxations in a metamagnet composed of cobalt(ii) chains with mixed azide and tetrazolate bridges

2013 ◽  
Vol 49 (18) ◽  
pp. 1814 ◽  
Author(s):  
Xiu-Bing Li ◽  
Guang-Mei Zhuang ◽  
Xuan Wang ◽  
Kun Wang ◽  
En-Qing Gao
Keyword(s):  
Slow Relaxations

Non-uniform Small-gain Theorems for Systems with Critical and Slow Relaxations

2008 ◽  
Vol 41 (2) ◽  
pp. 6269-6276
Author(s):  
Ivan Y. Tyukin ◽  
Henk Nijmeijer ◽  
Cees van Leeuwen
Keyword(s):  
Slow Relaxations ◽  
Small Gain

Slow Relaxations in the Supercooled State of a Model Diatomic Molecular Liquid

2003 ◽  
Vol 72 (1) ◽  
pp. 178-184 ◽  
Author(s):  
Mariko Higuchi ◽  
Jun Matsui ◽  
Takashi Odagaki
Keyword(s):  
Molecular Liquid ◽  
Supercooled State ◽  
Slow Relaxations

Structural Relaxation and Structural Memory at Amorphous Silicon Dangling Bonds

1994 ◽  
Vol 336 ◽  
Author(s):  
Howard M. Branz ◽  
Peter A. Fedders
Keyword(s):  
Amorphous Silicon ◽  
Energy Levels ◽  
Electronic Energy ◽  
Relaxation Effects ◽  
Structural Environment ◽  
Slow Relaxations ◽  
Transient Capacitance ◽  
Electronic Energy Levels ◽  
Gap States ◽  
Structural Memory

ABSTRACTWe examine the energy and time scales of configurational relaxation around the dangling bond defect, D, in hydrogenated Amorphous silicon (a-Si:H). After D captures or emits charge, its bond angle, electron energy eigenvalues and local structural environment all change. This determines the measured electronic energy levels; we use previous theoretical results and experimental data to estimate the density of gap states in the different atomic configurations of D. We also describe D relaxation effects observed in experiments, including the very slow relaxations found in recent transient capacitance measurements. To explain the unusual T-independent kinetics of transient capacitance carrier emission, we propose a model of “structural memory” in a-Si:H. After carrier capture, neighbors of D retain memory of their pre-capture configuration for seconds at 300K. The rate-limiting step to carrier emission is an effectively one-dimensional random walk of these neighbors through their configuration space and back to the pre-capture configuration. The final, activated, step of emission is very rapid. We describe analytic and monte Carlo calculations that support the structural memory Model and propose possible microscopic Mechanisms.

Slow relaxations in salicylsalicylic acid studied by dielectric techniques

2005 ◽  
Vol 351 (46-48) ◽  
pp. 3600-3606 ◽  
Author(s):  
Joaquim J. Moura Ramos ◽  
Natália T. Correia ◽  
Hermínio P. Diogo ◽  
Cristina Alvarez ◽  
Tiberio A. Ezquerra
Keyword(s):  
Slow Relaxations ◽  
Salicylsalicylic Acid
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