ArF Excimer laser-induced selective coupling of cycloalkanes: photochemical reaction at the absorption edge

1989 ◽  
pp. 1669 ◽  
Author(s):  
Akihiko Ouchi ◽  
Akira Yabe ◽  
Yoshihisa Inoue ◽  
Yoshihiko Daino ◽  
Tadao Hakushi
Keyword(s):  
Excimer Laser ◽  
Absorption Edge ◽  
Photochemical Reaction ◽  
Arf Excimer Laser

Precipitation of carbon in zeolites using photochemical reaction excited by an ArF excimer laser

1998 ◽  
Author(s):  
Yuka Yamada ◽  
Shigeru Takeyama ◽  
Takaaki Orii ◽  
Takehito Yoshida
Keyword(s):  
Excimer Laser ◽  
Photochemical Reaction ◽  
Arf Excimer Laser

Excimer Laser Induced Modification of Teflon Surface into Silicon Carbide-Like

1991 ◽  
Vol 236 ◽  
Author(s):  
M. Okoshi ◽  
K. Toyoda ◽  
M. Murahara
Keyword(s):  
Silicon Carbide ◽  
Excimer Laser ◽  
Photochemical Reaction ◽  
Surface Region ◽  
Mixed Gas ◽  
Near Surface ◽  
Modification Process ◽  
Gas Atmosphere ◽  
Ft Ir ◽  
Arf Excimer Laser

AbstractA silicon carbide-like layer was produced in the near-surface region of teflon by irradiating with an ArF excimer laser in a SiH4 and B(CH3)3 mixed gas atmosphere. The pure photochemical reaction was employed in the modification process, and the defluorination of the surface was performed with boron atoms which were photodissociated from B(CH3)3. The CH3 radicals, also photodissociated, induced the dehydrogenation of SiH4 gas; which followed the production of SiHx radicals. The SiHx radicals and CH3 radicals which could not have induced the dehydrogenation of SiH4 were substituted for fluorine atoms of the surface. As a result, the surface was photomodified into silicon carbide. Chemical composition of the photomodified surface was inspected by the XPS and the ATR-FT-IR spectra measurement, and the bonding of the Si-CH3 radicals which traded off the reduction of the fluorine atoms was comfirmed. The Si/C composition ratio of the photomodified surface was 0.7.

Growth of Metal Nucleus on Polyimide Surface with Photochemical Reaction

1999 ◽  
Vol 585 ◽  
Author(s):  
M. Tomita ◽  
M. Murahara
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Excimer Laser ◽  
Copper Sulfate ◽  
Electroless Plating ◽  
Atmospheric Pressure ◽  
Photochemical Reaction ◽  
Nickel Sulfate ◽  
Hydrogen Atoms ◽  
Arf Excimer Laser

AbstractCircuit patterned nucleation of copper or nickel atoms onto polyimide surface was demonstrated by using ArF excimer laser (λ=193nm) and copper sulfate aqueous solution (CuSO4.5H2O+nH2O), or nickel sulfate aqueous solution (NiSO4–6H2O+nH2O) in an atmospheric pressure. Photo-excited C-H bonds of the polyimide surface were effectively dehydrated with hydrogen atoms which were photodissociated from the water. The dangling bonds of the dehydrated hydrogen atoms were combined with the oxygen and the copper or nickel atoms that were photodissociated by CuSO4 solution or NiSO4 solution. Thus, C-O-Cu bonds or C-O-Ni bonds were formed on the surface. After this copper and nickel substitution, it was carried out onto the nucleated parts by usual electroless plating at 70 °C. In this process, the conductive circuit patterned copper or nickel thin film was deposited on polyimide surface.

High Resolution Displacement of Functional Groups onto Fluorocarbon Resin Surface by Using ArF Excimer Laser

1996 ◽  
Vol 451 ◽  
Author(s):  
T. Shimizu ◽  
M. Murahara
Keyword(s):  
Contact Angle ◽  
High Resolution ◽  
Laser Beam ◽  
Thin Layer ◽  
Functional Groups ◽  
Excimer Laser ◽  
Laser Fluence ◽  
Large Area ◽  
Three Solutions ◽  
Arf Excimer Laser

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.

Characterization of GaAs surfaces treated with phosphine gas photodecomposed by an ArF excimer laser

1998 ◽  
Vol 72 (12) ◽  
pp. 1472-1474 ◽  
Author(s):  
Takashi Sugino ◽  
Hideaki Ninomiya ◽  
Junji Shirafuji ◽  
Koichiro Matsuda
Keyword(s):  
Excimer Laser ◽  
Arf Excimer Laser
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