Nonvolatile electrical switching behavior observed in a functional polyimide thin film embedded with silver nanoparticles

RSC Advances ◽  
2012 ◽  
Vol 2 (26) ◽  
pp. 9846 ◽  
Author(s):  
Guofeng Tian ◽  
Dezhen Wu ◽  
Lei Shi ◽  
Shengli Qi ◽  
Zhanpeng Wu
Keyword(s):  
Thin Film ◽  
Silver Nanoparticles ◽  
Switching Behavior ◽  
Electrical Switching

A Comparative Study of Electrical Switching Behavior of Certain Tellurium Based Chalcogenide Thin Films for Phase Change Memory (PCM) Applications

2010 ◽  
Vol 123-125 ◽  
pp. 1207-1210
Author(s):  
Chandasree Das ◽  
G. Mohan Rao ◽  
S. Asokan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Switching Behavior ◽  
Flash Evaporation ◽  
Electron Microscopic ◽  
Electrical Switching ◽  
Memory Switching ◽  
Three Samples ◽  
Electron Microscopic Image ◽  
The Difference

This work describes the electrical switching behavior of three telluride based amorphous chalcogenide thin film samples, Al-Te, Ge-Se-Te and Ge-Te-Si. These amorphous thin films are made using bulk glassy ingots, prepared by conventional melt quenching technique, using flash evaporation technique; while Al-Te sample has been coated in coplanar electrode geometry, Ge-Se-Te and Ge-Te-Si samples have been deposited with sandwich electrodes. It is observed that all the three samples studied, exhibit memory switching behavior in thin film form, with Ge-Te-Si sample exhibiting a faster switching characteristic. The difference seen in the switching voltages of the three samples studied has been understood on the basis of difference in device geometry and thickness. Scanning electron microscopic image of switched region of a representative Ge15Te81Si4 sample shows a structural change and formation of crystallites in the electrode region, which is responsible for making a conducting channel between the two electrodes during switching.

Electrical switching behavior of amorphous Al23Te77 thin film sample

2010 ◽  
Vol 356 (41-42) ◽  
pp. 2203-2206 ◽  
Author(s):  
Chandasree Das ◽  
R. Lokesh ◽  
G. Mohan Rao ◽  
S. Asokan
Keyword(s):  
Thin Film ◽  
Switching Behavior ◽  
Thin Film Sample ◽  
Film Sample ◽  
Electrical Switching

Turning electrical switching behaviors in WOx thin films by thickness

2019 ◽  
Vol 12 (01) ◽  
pp. 1850107
Author(s):  
Weijie Duan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Dynamic Evolution ◽  
Behavior Changes ◽  
Electrical Switching ◽  
Threshold Switching ◽  
Highly Sensitive

The tunability of electrical switching behaviors in WOx thin films were investigated in this paper. Electrical responses of the WOx films were observed to be highly sensitive to the film thickness. As the film thickness increases from 50 to 100[Formula: see text]nm, the switching behavior changes from complementary resistive switching (CRS) to threshold switching (TS). A defect-related dynamic evolution of filament is responsible for the switching behavior. Such a controllable electrical switching can well broaden the application of the WOx thin film.

scholarly journals Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

2020 ◽  
Author(s):  
Jing Wang ◽  
Bailey Bedford ◽  
Chanle Chen ◽  
Ludi Miao ◽  
Binghcheng Luo
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Excitation Energy ◽  
Ultraviolet Light ◽  
Light Response ◽  
Resistance Switching ◽  
The State ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

scholarly journals EGaIn-Assisted Room-Temperature Sintering of Silver Nanoparticles for Stretchable, Inkjet-Printed, Thin-Film Electronics

2018 ◽  
Vol 30 (29) ◽  
pp. 1801852 ◽  
Author(s):  
Mahmoud Tavakoli ◽  
Mohammad H. Malakooti ◽  
Hugo Paisana ◽  
Yunsik Ohm ◽  
Daniel Green Marques ◽  
...  
Keyword(s):  
Thin Film ◽  
Silver Nanoparticles ◽  
Room Temperature ◽  
Thin Film Electronics

Electrical switching properties and structural characteristics of GeSe–GeTe films

Nanoscale ◽  
2019 ◽  
Vol 11 (4) ◽  
pp. 1595-1603 ◽  
Author(s):  
Kun Ren ◽  
Min Zhu ◽  
Wenxiong Song ◽  
Shilong Lv ◽  
Mengjiao Xia ◽  
...  
Keyword(s):  
Structural Characteristics ◽  
Switching Behavior ◽  
Structural Motifs ◽  
Electrical Switching

The local structural motifs in GeSe–GeTe have been determined, which is essential to understand its thermal and electrical switching behavior.

Structural and spectroscopic studies of thin film of silver nanoparticles

2011 ◽  
Vol 257 (24) ◽  
pp. 10607-10612 ◽  
Author(s):  
M.A. Majeed Khan ◽  
Sushil Kumar ◽  
Maqusood Ahamed ◽  
Salman A. Alrokayan ◽  
M.S. Alsalhi ◽  
...  
Keyword(s):  
Thin Film ◽  
Silver Nanoparticles ◽  
Spectroscopic Studies
Sign in / Sign up

Export Citation Format

Share Document