Toward ordered mesoporous rare-earth sesquioxide thin films via polymer templating: high temperature stable C-type Er2O3 with finely-tunable crystallite sizes

RSC Advances ◽  
2012 ◽  
Vol 2 (18) ◽  
pp. 7053 ◽  
Author(s):  
Jan Haetge ◽  
Christian Reitz ◽  
Christian Suchomski ◽  
Torsten Brezesinski
1987 ◽  
Vol 99 ◽  
Author(s):  
M. E. Gross ◽  
M. Hong ◽  
S. Liou ◽  
P. K. Gallagher

ABSTRACTA new metallo-organic spin-on technique is described for producing thin films of the high temperature perovskite superconductors, LnBa2Cu3O7−x, where Ln represents a rare earth element. Pyrolysis of the spin-coated films leads to black films up to several microns thick whose degree of orientation is a function of the processing temperature and duration. Representative films of YBa2Cu3O7−x on MgO begin to exhibit orientation with the c-axis perpendicular to the film at heat treatments above 900 'C. The superconducting behavior of a highly oriented film produced at 990 ° C is characterized by Tc (onset) = 89 K, Tc (R=0) = 77 K and Jc = 104 amp cm-2 at 65 K.


2009 ◽  
Vol 176 ◽  
pp. 012010 ◽  
Author(s):  
Nikolay Leonyuk ◽  
Victor Maltsev ◽  
Elena Volkova ◽  
Elizaveta Koporulina ◽  
Larisa Nekrasova ◽  
...  

2020 ◽  
Vol 989 ◽  
pp. 215-220
Author(s):  
A.S. Kuz'mina ◽  
M.P. Kuz'min

The paper discusses the findings of the study of the structural and magnetic properties of Zn1-xMnxOy thin films (x = 0-0.08), synthesized by pulsed laser deposition under different conditions. It has been discovered that during the doping, thin films remain single-phased and retain wurtzite structure (ZnO wurz), oriented along the direction (001). It has been determined that thin films obtained under the same synthesis conditions have similar crystallite sizes, which is confirmed by the substitution of Mn2+ ions with Zn2+ ions in the Zn O semiconductor matrix. It has been found that annealing of samples in the oxygen atmosphere increases the surface roughness from 1-3 nm to ~ 10 nm; the higher the concentration of manganese in Zn1-xMnxOy films is, the greater the value of Ra. It has been demonstrated that, at room temperature, all Zn1-xMnxOy thin films (x = 0-0.08) exhibit ferromagnetic behavior, which is more pronounced upon the increase in concentration of oxygen vacancies and manganese in the samples. It is assumed that two mechanisms explaining high-temperature ferromagnetism coexist in the films: the first one is determined by ferromagnetic exchange between Mn2+ cations by means of oxygen vacancies, the second one deals with super-exchange interaction between oxygen vacancies.


2013 ◽  
Vol 25 (12) ◽  
pp. 2527-2537 ◽  
Author(s):  
Christian Suchomski ◽  
Christian Reitz ◽  
Celia T. Sousa ◽  
Joao P. Araujo ◽  
Torsten Brezesinski

ChemInform ◽  
2013 ◽  
Vol 44 (35) ◽  
pp. no-no
Author(s):  
Christian Suchomski ◽  
Christian Reitz ◽  
Celia T. Sousa ◽  
Joao P. Araujo ◽  
Torsten Brezesinski

1996 ◽  
Vol 441 ◽  
Author(s):  
Shinji Takayama ◽  
Naganori Tsutsui ◽  
Zheng Zhudan

AbstractThe addition of Ho or Er to Al thin films markedly suppresses the grain growth at high temperature (350 °C – 450 °C). However, different from the effect of adding elements of Y, La, Pr, Nd, Sm, Gd, and Dy, thermal defects of hillocks or whiskers start to appear on the film surface after annealing at 300 °C ( though depending on the content of added elements). It has been revealed that small amounts of metallic compounds of Al3RE (RE = Ho and Er) have been segregated in a supersaturated solid solution of the Al phase after annealing at 300 °C, and that a large amount of added impurities still remained in the Al matrix. The resistivity of Al1−xREx alloy thin films (RE = Ho or Er, x = 2 – 7 atomic %) was 5 – 7 μΩcm after annealing at 450 °C.


AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015334
Author(s):  
W. Zhou ◽  
C. T. Ma ◽  
T. Q. Hartnett ◽  
P. V. Balachandran ◽  
S. J. Poon
Keyword(s):  

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