Evolution of graphene nanoribbons under low-voltage electron irradiation

Nanoscale ◽  
2012 ◽  
Vol 4 (15) ◽  
pp. 4555 ◽  
Author(s):  
Wenpeng Zhu ◽  
Hongtao Wang ◽  
Wei Yang
Keyword(s):  
Electron Irradiation ◽  
Low Voltage ◽  
Graphene Nanoribbons ◽  
Voltage Electron

The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation

2010 ◽  
Vol 645-648 ◽  
pp. 407-410
Author(s):  
John W. Steeds
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Low Voltage ◽  
Low Energy ◽  
Al Doping ◽  
Voltage Electron ◽  
Displacement Threshold ◽  
Low Energy Electron ◽  
Photoluminescence Microscopy ◽  
Low Temperature Photoluminescence

Low voltage electron irradiations with electron energies down to the C-displacement threshold have been performed and the irradiated samples studied subsequently by low temperature photoluminescence microscopy. The results were found to depend on the electron energy, the n(N)- or p(Al)-doping and the C- or Si-face irradiated. The implications of these results for the current understanding of the atomic origins of these lines are discussed.

Radiation-Induced Precipitation at Thin Foil Surfaces in Ni-Be Alloys

1982 ◽  
Vol 40 ◽  
pp. 598-599
Author(s):  
T. Mukai ◽  
T. E. Mitchell
Keyword(s):  
Electron Microscopy ◽  
High Voltage ◽  
Electron Irradiation ◽  
High Vacuum ◽  
Thin Foil ◽  
Homogeneous Precipitation ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron ◽  
Radiation Induced

Radiation-induced homogeneous precipitation in Ni-Be alloys was recently observed by high voltage electron microscopy. A coupling of interstitial flux with solute Be atoms is responsible for the precipitation. The present investigation further shows that precipitation is also induced at thin foil surfaces by electron irradiation under a high vacuum.

Angular Resolved Electron Spectroscopy with Parallel Recording

1990 ◽  
Vol 48 (2) ◽  
pp. 370-371
Author(s):  
Huang Min ◽  
P.S. Flora ◽  
C.J. Harland ◽  
J.A. Venables
Keyword(s):  
Electron Spectroscopy ◽  
Low Voltage ◽  
Solid Angle ◽  
Detection System ◽  
Voltage Electron ◽  
Cylindrical Mirror ◽  
Inner Radius ◽  
Channel Plate ◽  
And Performance ◽  
Type Detector

A cylindrical mirror analyser (CMA) has been built with a parallel recording detection system. It is being used for angular resolved electron spectroscopy (ARES) within a SEM. The CMA has been optimised for imaging applications; the inner cylinder contains a magnetically focused and scanned, 30kV, SEM electron-optical column. The CMA has a large inner radius (50.8mm) and a large collection solid angle (Ω > 1sterad). An energy resolution (ΔE/E) of 1-2% has been achieved. The design and performance of the combination SEM/CMA instrument has been described previously and the CMA and detector system has been used for low voltage electron spectroscopy. Here we discuss the use of the CMA for ARES and present some preliminary results.The CMA has been designed for an axis-to-ring focus and uses an annular type detector. This detector consists of a channel-plate/YAG/mirror assembly which is optically coupled to either a photomultiplier for spectroscopy or a TV camera for parallel detection.

Low voltage electron diffractive imaging of atomic structure in single-wall carbon nanotubes

2011 ◽  
Vol 98 (17) ◽  
pp. 174103 ◽  
Author(s):  
Osamu Kamimura ◽  
Yosuke Maehara ◽  
Takashi Dobashi ◽  
Keita Kobayashi ◽  
Ryo Kitaura ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Structure ◽  
Low Voltage ◽  
Single Wall Carbon Nanotubes ◽  
Diffractive Imaging ◽  
Single Wall Carbon ◽  
Voltage Electron

Analysis of the possibility of performing microminiature low-voltage electron devices for vacuum millimeter-wavelength integral circuit

1994 ◽  
Author(s):  
Yuri V. Gulyaev ◽  
I. S. Nefyodov ◽  
A. V. Nechaev ◽  
Nickolay I. Sinitsyn ◽  
Gennadii V. Torgashov ◽  
...  
Keyword(s):  
Low Voltage ◽  
Millimeter Wavelength ◽  
Voltage Electron ◽  
Integral Circuit ◽  
Electron Devices

Promising Zn3Ta2O8:Pr3+ Red Phosphor for Low Voltage Cathodoluminescence Applications

2011 ◽  
Vol 306-307 ◽  
pp. 251-254 ◽  
Author(s):  
Shreyas S. Pitale ◽  
L.L. Noto ◽  
I.M. Nagpure ◽  
O.M. Ntwaeaborwa ◽  
J.J. Terblans ◽  
...  
Keyword(s):  
Electron Beam ◽  
Photoelectron Spectroscopy ◽  
Low Voltage ◽  
Chemical Constituents ◽  
High Energy ◽  
Binding Energies ◽  
Xenon Lamp ◽  
Voltage Electron ◽  
Information Displays ◽  
Prime Concern

Zn3Ta2O8 is a promising host for low voltage cathodoluminescence (CL) applications. Surface chemical stability during low voltage electron beam excitation is a prime concern for phosphors to be used in various new generation information displays. Photoluminescence (PL) and CL characteristics of the Zn3Ta2O8 host doped with Pr3+ are presented. The phosphors were synthesized via solid-state reaction route at 1100°C. Red CL or PL with a maximum at 611 nm, attributed to the 1D2-3H4 transition of the Pr3+ ion, was observed at room temperature under high energy electron (2 keV, 12 μA) or a monochromatic xenon lamp (257 nm) irradiation. Electron stimulated chemical changes on the surface of the Zn3Ta2O8:Pr3+ phosphor during an electron beam exposure from 0-350 C/cm2 was monitored using Auger electron spectroscopy. The CL exhibited only a 20% loss in the original intensity during the continuous electron beam exposure. X-ray photoelectron spectroscopy (XPS) was used to estimate the redox states of the chemical constituents and a comparison of binding energies was made with the standard Ta2O5 and ZnO compounds. A correlation between the structural configuration of Zn3Ta2O8 and the XPS data is also established.

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