Liquid alloy printing of microfluidic stretchable electronics

Lab on a Chip ◽  
2012 ◽  
Vol 12 (22) ◽  
pp. 4657 ◽  
Author(s):  
Seung Hee Jeong ◽  
Anton Hagman ◽  
Klas Hjort ◽  
Magnus Jobs ◽  
Johan Sundqvist ◽  
...  
Keyword(s):  
Liquid Alloy ◽  
Stretchable Electronics

Pneumatic Enabled Vertical Interconnect Access of Liquid Alloy Circuits toward Highly Integrated Stretchable Electronics

2021 ◽  
Vol 6 (3) ◽  
pp. 2000966
Author(s):  
Qin Jiang ◽  
Shuo Zhang ◽  
Jiajun Jiang ◽  
Wenjie Fei ◽  
Zhigang Wu
Keyword(s):  
Liquid Alloy ◽  
Stretchable Electronics ◽  
Vertical Interconnect

scholarly journals Nucleation of SiO$$_{2}$$-CaO-Al$$_{2}$$O$$_{3}$$ Slag in Oxidative Ladle Refining of Metallurgical Grade Silicon

2021 ◽  
Author(s):  
Erlend L. Bjørnstad ◽  
Gabriella Tranell
Keyword(s):  
Liquid Alloy ◽  
Molten Slag ◽  
Liquid Structure ◽  
Theoretical Description ◽  
Metallurgical Grade Silicon ◽  
Ladle Refining ◽  
Active Nature ◽  
Process Behavior ◽  
Surface Active ◽  
Grade Silicon

AbstractOxidative ladle refining (OLR) is the most used refining method in industrial production of metallurgical grade silicon. OLR is performed by purging the liquid alloy with oxygen-enhanced air at 1823 K to 1873 K, reacting with silicon and the primary slag forming impurities to a SiO$$_{2}$$ 2 -CaO-Al$$_{2}$$ 2 O$$_{3}$$ 3 slag. To further increase our capability to control this process, it is paramount to understand how the slag nucleates and forms, and represent it such that it is useful for predicting and controlling the process behavior. This work aims to formulate a comprehensive theoretical description of slag nucleation and formation at nano/microscale using classical macroscale thermodynamics, bridging these spatial regimes. To achieve this, the work argues that silica’s liquid structure allows its nuclei to exhibit “well defined” surfaces. Furthermore, silica is predicted to be highly surface active, so if its concentration is high while the slag nucleus is small, the SiO$$_{2}$$ 2 -CaO-Al$$_{2}$$ 2 O$$_{3}$$ 3 slag should retain silica’s surface properties. An experiment confirmed the surface active nature of silica in the SiO$$_{2}$$ 2 -CaO-Al$$_{2}$$ 2 O$$_{3}$$ 3 system. It was also shown that increasing the slag’s calcia concentration has a greater effect on the interfacial tension between the molten slag and liquid alloy than alumina, confirming industrial observations of the coupling between refining rate and relative alloy/slag composition.

scholarly journals Relation between the elastic stretchability of stretchable electronics and the cell size of the cellular substrate

2021 ◽  
pp. 104395
Author(s):  
Feng Zhu ◽  
Xinyi Xiao ◽  
Min Liu ◽  
Chao Zhu ◽  
Yu Tian ◽  
...  
Keyword(s):  
Cell Size ◽  
Stretchable Electronics

Permeable superelastic liquid-metal fibre mat enables biocompatible and monolithic stretchable electronics

2021 ◽  
Author(s):  
Zhijun Ma ◽  
Qiyao Huang ◽  
Qi Xu ◽  
Qiuna Zhuang ◽  
Xin Zhao ◽  
...  
Keyword(s):  
Liquid Metal ◽  
Stretchable Electronics ◽  
Metal Fibre

Mechanochromic Stretchable Electronics

2018 ◽  
Vol 10 (35) ◽  
pp. 29918-29924 ◽  
Author(s):  
Meredith H. Barbee ◽  
Kunal Mondal ◽  
John Z. Deng ◽  
Vivek Bharambe ◽  
Taylor V. Neumann ◽  
...  
Keyword(s):  
Stretchable Electronics

scholarly journals Stretchable Electronics: From Playroom to Lab: Tough Stretchable Electronics Analyzed with a Tabletop Tensile Tester Made from Toy-Bricks (Adv. Sci. 4/2016)

2016 ◽  
Vol 3 (4) ◽  
Author(s):  
Richard Moser ◽  
Gerald Kettlgruber ◽  
Christian M. Siket ◽  
Michael Drack ◽  
Ingrid M. Graz ◽  
...  
Keyword(s):  
Stretchable Electronics ◽  
Tensile Tester

Mechanism of the Transition From In-Plane Buckling to Helical Buckling for a Stiff Nanowire on an Elastomeric Substrate

2016 ◽  
Vol 83 (4) ◽  
Author(s):  
Youlong Chen ◽  
Yong Zhu ◽  
Xi Chen ◽  
Yilun Liu
Keyword(s):  
High Performance ◽  
Three Dimensional ◽  
Stretchable Electronics ◽  
Buckling Mode ◽  
Design And Optimization ◽  
Out Of Plane ◽  
Plane Direction ◽  
Plane Displacement ◽  
Helical Buckling ◽  
Selection Of

In this work, the compressive buckling of a nanowire partially bonded to an elastomeric substrate is studied via finite-element method (FEM) simulations and experiments. The buckling profile of the nanowire can be divided into three regimes, i.e., the in-plane buckling, the disordered buckling in the out-of-plane direction, and the helical buckling, depending on the constraint density between the nanowire and the substrate. The selection of the buckling mode depends on the ratio d/h, where d is the distance between adjacent constraint points and h is the helical buckling spacing of a perfectly bonded nanowire. For d/h > 0.5, buckling is in-plane with wavelength λ = 2d. For 0.27 < d/h < 0.5, buckling is disordered with irregular out-of-plane displacement. While, for d/h < 0.27, buckling is helical and the buckling spacing gradually approaches to the theoretical value of a perfectly bonded nanowire. Generally, the in-plane buckling induces smaller strain in the nanowire, but consumes the largest space. Whereas the helical mode induces moderate strain in the nanowire, but takes the smallest space. The study may shed useful insights on the design and optimization of high-performance stretchable electronics and three-dimensional complex nanostructures.

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