Facile strategy for synthesis of mesoporous crystalline γ-alumina by partially hydrolyzing aluminum nitrate solution

2012 ◽  
Vol 22 (45) ◽  
pp. 23806 ◽  
Author(s):  
Xingfu Shang ◽  
Xueguang Wang ◽  
Wangxin Nie ◽  
Xuefeng Guo ◽  
Xiujing Zou ◽  
...  
Keyword(s):  
Nitrate Solution ◽  
Aluminum Nitrate

Porous alumina ceramics by spray-pyrolyzed powder from aluminum sulfate and aluminum nitrate solutions

1994 ◽  
Vol 9 (7) ◽  
pp. 1709-1713 ◽  
Author(s):  
Kiyoshi Okada ◽  
Akihiro Tanaka ◽  
Shigeo Hayashi ◽  
Keiji Daimon ◽  
Nozomu Otsuka
Keyword(s):  
Pore Size ◽  
Aluminum Sulfate ◽  
Pore Radius ◽  
Nitrate Solution ◽  
Sulfate Solution ◽  
Aluminum Nitrate ◽  
Alumina Ceramics ◽  
Average Pore ◽  
Average Pore Radius ◽  
Nitrate Solutions

Porous α-alumina ceramics were prepared using the spray-pyrolyzed powder from aluminum nitrate solution and aluminum sulfate solution. Porosity and pore size distribution of the samples were examined with respect to the forming pressure and firing temperature. The porosity obtained changed from around 80% in the green compacts to 60–70% in the fired bodies fired at 1500 °C. The porosity of 30–40% remained even by firing at 1700 °C. Although there was no significant difference in the porosity of the fired bodies prepared from the sulfate and nitrate solutions, the fired bodies prepared from the nitrate solution showed apparently larger pore size than those from the sulfate solution. Fired bodies with an average pore radius from 0.2 to 0.8 μm can be prepared by this method. The four-point bending strength of the fired bodies, which had a porosity of 57% and an average pore radius of 0.23 μm, was 35 MPa.

Low-temperature facile solution-processed gate dielectric for combustion derived oxide thin film transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54729-54739 ◽  
Author(s):  
Han Wang ◽  
Tieyu Sun ◽  
Wangying Xu ◽  
Fangyan Xie ◽  
Lei Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Nitrate Solution ◽  
Aluminum Nitrate ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Dielectric Layers

An improved hydrophilic aluminum nitrate solution was designed to spin coat robust dielectric layers for thin film transistors.

scholarly journals Surface Modification of Stainless Steel by Laser-Induced Wet Treatment in Aluminum Nitrate Solution

2017 ◽  
Vol 83 (1) ◽  
pp. 72-77 ◽  
Author(s):  
Atsushi EZURA ◽  
Hikaru YOSHIMINE ◽  
Kazutoshi KATAHIRA ◽  
Jun KOMOTORI
Keyword(s):  
Stainless Steel ◽  
Surface Modification ◽  
Nitrate Solution ◽  
Aluminum Nitrate

Sinterability of SiC powder coated uniformly with Al ions

1998 ◽  
Vol 13 (4) ◽  
pp. 816-820 ◽  
Author(s):  
Soichiro Sameshima ◽  
Keisuke Miyano ◽  
Yoshihiro Hirata
Keyword(s):  
Fracture Toughness ◽  
Flexural Strength ◽  
Crack Propagation ◽  
Relative Density ◽  
Hot Pressing ◽  
Nitrate Solution ◽  
Aluminum Nitrate ◽  
Pressing Temperature ◽  
Temperature Range ◽  
Aspect Ratios

SiC particles coated uniformly with Al ions (0.25 mass% Al2O3) in an aluminum nitrate solution were consolidated by filtration through a gypsum mold. Hot-pressing in vacuum gave dense SiC (above 99% relative density) in the temperature range of 1900–1950 °C under a pressure of 39 MPa. The microstructures of dense SiC consisted of 2–5 μm grains of low aspect ratios (below 2). The fracture toughness and flexural strength of SiC increased gradually as the hot-pressing temperature became higher and were 4.3 Mpa m0.5 and 350 MPa, respectively, with hot-pressing at 1950 °C. Crack propagation in SiC shifted from intergrain to intragrain with increasing hot-pressing temperature.

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