Crystalline silicon photovoltaics: a cost analysis framework for determining technology pathways to reach baseload electricity costs

2012 ◽  
Vol 5 (3) ◽  
pp. 5874 ◽  
Author(s):  
D. M. Powell ◽  
M. T. Winkler ◽  
H. J. Choi ◽  
C. B. Simmons ◽  
D. Berney Needleman ◽  
...  
Keyword(s):  
Cost Analysis ◽  
Crystalline Silicon ◽  
Analysis Framework ◽  
Silicon Photovoltaics ◽  
Electricity Costs

scholarly journals Wavelength and angle resolved reflectance measurements of pyramidal textures for crystalline silicon photovoltaics

2020 ◽  
Vol 28 (12) ◽  
pp. 1248-1257
Author(s):  
Tudor E. Scheul ◽  
Edris Khorani ◽  
Tasmiat Rahman ◽  
Martin D.B. Charlton ◽  
Stuart A. Boden
Keyword(s):  
Crystalline Silicon ◽  
Silicon Photovoltaics ◽  
Reflectance Measurements

scholarly journals On the Formation of Black Silicon Features by Plasma-Less Etching of Silicon in Molecular Fluorine Gas

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2214
Author(s):  
Bishal Kafle ◽  
Ahmed Ridoy ◽  
Eleni Miethig ◽  
Laurent Clochard ◽  
Edward Duffy ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Elevated Temperatures ◽  
Crystalline Silicon ◽  
High Volume ◽  
Black Silicon ◽  
Gas Mixture ◽  
Process Duration ◽  
Surface Reflection ◽  
Statistical Variation ◽  
Silicon Photovoltaics

In this paper, we study the plasma-less etching of crystalline silicon (c-Si) by F2/N2 gas mixture at moderately elevated temperatures. The etching is performed in an inline etching tool, which is specifically developed to lower costs for products needing a high volume manufacturing etching platform such as silicon photovoltaics. Specifically, the current study focuses on developing an effective front-side texturing process on Si(100) wafers. Statistical variation of the tool parameters is performed to achieve high etching rates and low surface reflection of the textured silicon surface. It is observed that the rate and anisotropy of the etching process are strongly defined by the interaction effects between process parameters such as substrate temperature, F2 concentration, and process duration. The etching forms features of sub-micron dimensions on c-Si surface. By maintaining the anisotropic nature of etching, weighted surface reflection (Rw) as low as Rw < 2% in Si(100) is achievable. The lowering of Rw is mainly due to the formation of deep, density grade nanostructures, so-called black silicon, with lateral dimensions that are smaller to the major wavelength ranges of interest in silicon photovoltaics.

Inkjet Technology for Crystalline Silicon Photovoltaics

2014 ◽  
Vol 27 (4) ◽  
pp. 599-626 ◽  
Author(s):  
David Stüwe ◽  
Dario Mager ◽  
Daniel Biro ◽  
Jan G. Korvink
Keyword(s):  
Crystalline Silicon ◽  
Silicon Photovoltaics

scholarly journals A life cycle cost analysis framework for geologic storage of hydrogen : a user's tool.

2011 ◽  
Author(s):  
Peter Holmes Kobos ◽  
Anna Snider Lord ◽  
David James Borns ◽  
Geoffrey T. Klise
Keyword(s):  
Life Cycle ◽  
Cost Analysis ◽  
Life Cycle Cost ◽  
Life Cycle Cost Analysis ◽  
Analysis Framework ◽  
Geologic Storage
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